scholarly journals Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 425
Author(s):  
Mannarsamy Anitha ◽  
Karuppiah Deva Arun Kumar ◽  
Paolo Mele ◽  
Nagarajan Anitha ◽  
Karunamoorthy Saravanakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Near Band Edge ◽  
Sem Images ◽  
Ag Doping ◽  
Nebulizer Spray Pyrolysis ◽  
Crystallite Sizes ◽  
Amorphous Glass ◽  
Set Up ◽  
Xrd Patterns

We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications.

Study on aluminum concentration on optical and electrical properties of AZO thin films fabricated by ultrasonic spray pyrolysis

2019 ◽  
Vol 33 (22) ◽  
pp. 1950246
Author(s):  
Weiguang Yang ◽  
Miao He ◽  
Liu Yang ◽  
Ziliang Zhou ◽  
Xiaoying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Quartz Substrate ◽  
Visible Region ◽  
Ultrasonic Spray Pyrolysis ◽  
Aluminum Concentration ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Ultrasonic Spray

In this work, transparent and conductive Al-doped ZnO (AZO) nanofilms were prepared on quartz substrate by ultrasonic spray pyrolysis (USP) method. The effects of Al/Zn atomic ratios on the micro-structural, morphological, optical photoluminescence and electrical properties of AZO thin films were effectively investigated. All the prepared samples showed hexagonal wurtzite structure. The scanning electron microscopy (SEM) showed that the surface morphology of all samples changed with the substrate temperature. The average transmittance of all AZO samples was higher than 85% in the visible region. The photoluminescence (PL) spectrum of the samples showed that the near band edge emission in PL spectra shifted to shorter wavelengths with increasing Al-doped concentration. The lowest sheet resistance was obtained for the samples prepared with 4% at. Al-doped value. The electrical conductivity of AZO films was improved by Al doping, which allowed their use as optoelectronic materials.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

scholarly journals Synthesis and comparative study on the structural and optical properties of ZnO doped with Ni and Ag nanopowders fabricated by sol gel technique

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Al-Ariki ◽  
Nabil A. A. Yahya ◽  
Sua’ad A. Al-A’nsi ◽  
M. H. Hj Jumali ◽  
A. N. Jannah ◽  
...  
Keyword(s):  
Optical Properties ◽  
Sol Gel ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Band Gaps ◽  
Structural And Optical Properties ◽  
Crystallite Sizes ◽  
Gel Technique ◽  
Uv Visible ◽  
Xrd Patterns

AbstractIn this work we have tried to prepare Ni and Ag doped ZnO nanopowders using the sol gel technique. The influence of Ni and Ag (1, 3 and 5 mol.%) on the crystalline structure and optical properties of ZnO was investigated. The samples were characterized by XRD, FTIR and UV–visible spectrophotometer. XRD patterns confirmed the wurtzite formation of doped and undoped ZnO nanopowders. The average crystallite sizes of the prepared samples found from XRD were 19 nm for undoped ZnO, from 17 to 22 nm for Ni-ZnO and from 19 to 26 nm for Ag-ZnO. The average crystallite size of Ag-ZnO increased with increasing Ag contents. Different optical properties of Ni-ZnO and Ag-ZnO nanopowders were observed for different Ni and Ag content. The band gaps of Ni-ZnO and Ag-ZnO nanopowders were lower than that of the undoped ZnO (3.1 eV). The band gaps of Ag-ZnO were lower than that of Ni-ZnO. The optical properties of ZnO were enhanced by Ni (mol.%) in the UV region and by Ag (3 and 5 mol.%) in the visible region.

scholarly journals Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

2013 ◽  
Vol 15 ◽  
pp. 137-150 ◽  
Author(s):  
J.A. Najim ◽  
J.M. Rozaiq
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Visible Region ◽  
Annealing Treatment ◽  
Zno Thin Films ◽  
Chemical Spray Pyrolysis ◽  
Cd Doping ◽  
Crystallite Sizes ◽  
Diffraction Patterns ◽  
Polycrystalline Structures

ZnO thin films with Cd/Zn nominal ratios of 0%, 1%, 3%, 5%, and 7% and thickness of 0.7 μm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

scholarly journals Electrochemical Properties of Ce0.5Sr0.5 (Co0.8Fe0.2)1−xZrxO3−δ Cathode Materials for Low Intermediate Temperature Solid Oxide Fuel Cells (LIT-SOFCs) Synthesized by Sol-Gel Method

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Beyene Tesfaw Ayalew ◽  
P. Vijay Bhaskar Rao
Keyword(s):  
Electrochemical Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Electronic Conductivity ◽  
Partial Substitution ◽  
Sem Images ◽  
Gel Method ◽  
Sol Gel Method ◽  
Crystallite Sizes ◽  
Xrd Patterns

Ce0.5Sr0.5 (Co0.8Fe0.2)1−x ZrxO3−δ (CSCFZ) powders were synthesized by the sol-gel method and characterized to study structural and electrochemical properties. X-ray diffractometer (XRD) patterns of all samples give nanosized particles of a high-degree crystalline cathode having a cubic-type perovskite structure of space group Pm-3m with the existence of oxygen vacancies in the lattices. The results have the perovskite phase with average crystallite sizes of 26.57 nm, 18.14 nm, 18.13 nm, and 18.12 nm with porosities of 9.93%, 9.87%, 9.50%, and 9.08% for x = 0, 0.1, 0.15, and 0.2, respectively. Scanning electron microscope (SEM) micrographs showed the presence of pores on the microstructure. Average grain sizes of prepared samples found from SEM images were in the range of 105.30–183.02 nm. The partial substitution of zirconium at the B-site shows more stable materials than the host without decreasing the porosity that much. The results of electronic conductivity analyzed by the four-probe dc technique show that the conductivity of synthesized materials increases with the increment of both dopant concentration and temperature by the decrement of area specific resistances. The electrical conductivity of CSCFZ steadily increased with the increment of temperature which reached 42.76 Scm−1 at around 450°C.

Effect of SnCl4 Concentration on Transparent and Conducting Undoped Tin Oxide Thin Films

2016 ◽  
Vol 690 ◽  
pp. 246-251 ◽  
Author(s):  
S. Tipawan Khlayboonme ◽  
Pitiporn Thanomngam ◽  
Warawoot Thowladda
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Stoichiometric Composition ◽  
Visible Region ◽  
Residual Chlorine ◽  
Oxide Thin Films ◽  
Xps Spectra ◽  
Xrd Patterns ◽  
Substrate Surfaces

The purpose-built pyrolysis system based on an ultrasonically generated aerosol has been successfully used for deposition of highly transparent and conductive undoped tin (IV) oxide thin films. The morphological, structural, optical and electrical properties as well as electronic structures of the films for different concentrations of SnCl4.5H2O used as the starting precursor were investigated. FE-SEM displayed the substrate surfaces were uniformly covered with the film. The film thickness varied with the precursor concentration. XRD patterns showed the deposited films were a tetragonal phase and presented random orientations. The optical transmission spectra of all films revealed highly transmittance in the visible region. Refractive index of the films was between 1.85 and 2.0. XPS spectra for the Sn 3d5/2 and Sn 3d3/2 confirmed that the films were composed of SnO and SnO2 phases. The non-stoichiometric composition decreased with increasing concentration of the precursor. The films deposited with 0.30 M showed the highest conductivity and carrier concentration of 17 W-1cm-1 and 9.5 x 1019 cm-3, respectively. The disagreement of relation between XPS and Hall measurement suggested the higher carrier concentration arose from incorporation of residual chlorine from the solution precursor during deposition into the films. The interstitially incorporated chlorine considerably influenced the electrical properties of the films.

Thermally Deposited Sb2S3: Bi Thin Films for Solar Cell Absorber

2018 ◽  
Vol 21 (1) ◽  
pp. 037-042
Author(s):  
Durai Chella Priya ◽  
Daniel Thanabalan ◽  
Johnson Henry ◽  
Kannusamy Mohanraj ◽  
Ganesan Sivakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Visible Region ◽  
Band Gap Energy ◽  
Spectroscopic Techniques ◽  
Orthorhombic Crystal ◽  
Thermal Evaporation Method ◽  
Strong Emission ◽  
Uv Visible ◽  
Xrd Patterns

In recent years there has been growing interest in the materials suitable for real time storage application. Sb2S3 is a prospective material in this regard due to good photoconductivity. In this contest, thin films of Sb2S3 and Bi3+ doped Sb2S3 were deposited onto the transparent glass substrate by thermal evaporation method. The structural, optical and electrical properties were investigated by XRD, UV-Visible, Photoluminescence, and Impedance spectroscopic techniques. The XRD patterns confirm the orthorhombic crystal structured Sb2S3 and the inclusion of Bi3+ ions in the crystal system. UV-Visible analysis exhibited wide optical absorption in the visible region for both Sb2S3 and Bi3+ doped films and their band gap energy was found to be 1.60 eV and 1.55 eV respectively. The photoluminescence spectra showed a strong emission at 361nm. The value of capacitance, dielectric constant and real part of impedance decreases with increasing frequency for both the samples.

Syntheses of Hematite (α-Fe2O3) Nanoparticles Using Microwave-Assisted Calcination Method

2013 ◽  
Vol 737 ◽  
pp. 197-203 ◽  
Author(s):  
Tati Nurhayati ◽  
Ferry Iskandar ◽  
Khairurrijal ◽  
Abdullah Mikrajuddin
Keyword(s):  
Microwave Heating ◽  
Heating Time ◽  
Average Particle ◽  
Hematite Nanoparticles ◽  
Sem Images ◽  
Calcination Process ◽  
Microwave Assisted ◽  
Crystallite Sizes ◽  
Calcination Method ◽  
Xrd Patterns

Hematite (α-Fe2O3) nanoparticles were synthesized from the solution of FeCl3.6H2O and NaOH in water using microwave-assisted calcination method. The syntheses were initially carried out by microwave heating and completed by a calcination process using a simple heating method. The effect of microwave heating time, calcination temperature, and calcination time were investigated. The XRD patterns demonstrated that the obtained nanoparticles are pure hematite. Using the Scherrer method, the average crystallite sizes of hematite nanoparticles were in the range of 35.6 to 54.4 nm. The obtained hematite nanoparticles were spherical with the average particle sizes ranging from 91 to 116 nm as confirmed by the SEM images.

Sign in / Sign up

Export Citation Format

Share Document