scholarly journals Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1023
Author(s):  
Anca-Ionela Istrate ◽  
Iuliana Mihalache ◽  
Cosmin Romanitan ◽  
Oana Tutunaru ◽  
Silviu Vulpe ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Green Emission ◽  
Rf Magnetron Sputtering ◽  
Emission Peak ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ca Doping

We unveiled the effect of doping on the morpho-structural and opto/electrical properties of Ca-doped ZnO:Al thin films obtained by RF magnetron sputtering. Scanning electron microscopy (SEM) was performed to reveal the surface morphology, while the composition and crystal structure were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The correlation between the microstructure and the electrical conductivity identifies an increase in electrical conductivity up to 145 × 10−3 Ω−1·m−1 at 5 wt.% Ca doping level with the decrease in the grain size. Furthermore, the presence of Ca dopant triggers the occurrence of the emission peak at 430 nm and an increase of the green emission peak in PL spectra. Corroborating the electrical measurements with X-ray diffraction and optical measurements, one can infer that the electrical conductivity is dominated by intrinsic defects developed during deposition and by the existence of dopants.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

Dielectric and Room Temperature Tunable Properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films on Pt/MgO

2002 ◽  
Vol 720 ◽  
Author(s):  
T.S. Kalkur ◽  
Woo-Chul Yi ◽  
Elliott Philofsky ◽  
Lee Kammerdine
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
High Tunability ◽  
High Dielectric ◽  
Mgo Substrate ◽  
Mg Doped

AbstractMg- doped Ba0.96 Ca0.04 Ti0.84Zr0.16O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.

Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

2011 ◽  
Vol 399-401 ◽  
pp. 926-929
Author(s):  
Wei Zhang ◽  
Mei Ling Yuan ◽  
Xian Yang Wang ◽  
Jun Ouyang
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Ferroelectric Films ◽  
Axis Orientation ◽  
X Ray ◽  
Pure Argon ◽  
Single Target ◽  
Conductive Oxide

BaTiO3(BTO) thin films were grown on (100) SrTiO3(STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O2(20% O2) atmosphere. A La0.5Sr0.5CoO3(LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm2and 27.1 μC/cm2, for the BTO films grown in pure argon and in mixed Ar/O2atmosphere, respectively.

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

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