scholarly journals Structure and Conductivity Studies of Scandia and Alumina Doped Zirconia Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 317 ◽  
Author(s):  
Mantas Sriubas ◽  
Nursultan Kainbayev ◽  
Darius Virbukas ◽  
Kristina Bočkutė ◽  
Živilė Rutkūnienė ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Cubic Phase ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Impedance Measurements ◽  
Raman Analysis ◽  
X Ray ◽  
Co Doped

In this work, scandia-doped zirconia (ScSZ) and scandia–alumina co-doped zirconia (ScSZAl) thin films were prepared by electron beam vapor deposition. X-ray diffraction (XRD) results indicated a presence of ZrO2 cubic phase structure, yet Raman analysis revealed the existence of secondary tetragonal and rhombohedral phases. Thus, XRD measurements were supported by Raman spectroscopy in order to comprehensively analyze the structure of formed ScSZ and ScSZAl thin films. It was also found that Al dopant slows down the formation of the cubic phase. The impedance measurements affirmed the correlation of the amount of secondary phases with the conductivity results and nonlinear crystallite size dependence.

scholarly journals Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering

2017 ◽  
Vol 05 (02) ◽  
pp. 35-40
Author(s):  
Keisuke Shimada ◽  
Kenta Miura ◽  
Ryosuke Fujii ◽  
Masahiro Kanakubo ◽  
Wataru Kada ◽  
...  
Keyword(s):  
Thin Films ◽  
Tantalum Oxide ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Co Doped

TEM identification of secondary phases in non-stoichiometric polycrystalline CuInSe2 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 604-605
Author(s):  
J.P. Goral ◽  
M.M. Al-Jassim ◽  
D. Albin ◽  
J.R. Tuttle ◽  
R. Noufi
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Growth Conditions ◽  
Chalcopyrite Structure ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Cationic Sublattice ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Deposition Parameters

Polycrystalline thin films of CuInSe2 and CuGaSe2 are currently being developed as low-cost photovoltaic devices. These films are vacuum-deposited onto molybdenum metallized alumina substrates. The film composition may be varied by manipulation of the deposition parameters. For photovoltaic applications, the desired phase has a stoichiometry close to CuInSe2. This compound is a zincblende variant, the cations and anions occupying separate fcc sublattices. Under certain growth conditions, the Cu and In atoms adopt an ordered configuration within the cationic sublattice resulting in the tetragonal chalcopyrite structure. Even when the deposition parameters are manipulated to produce nominally stoichiometric films, powder x-ray traces often exhibit anomalous peaks indicative of the presence of impurity phases. The identification of these minority phases by x-ray diffraction alone is not possible in this materials system due to low peak intensity and overlap considerations. The formation of the secondary phases has a detrimental effect on the electrical and optical properties of the thin film device.

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon

Micron ◽  
2009 ◽  
Vol 40 (1) ◽  
pp. 89-93 ◽  
Author(s):  
M. Bhaskaran ◽  
S. Sriram ◽  
T.S. Perova ◽  
V. Ermakov ◽  
G.J. Thorogood ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Silicide ◽  
X Ray Diffraction ◽  
Raman Analysis ◽  
X Ray

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Composition Range ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Pzt Thin Films ◽  
X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition

1994 ◽  
Vol 9 (12) ◽  
pp. 3125-3130 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Weight Loss ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conformal Coatings

Polyxylylene thin films grown by chemical vapor deposition (CVD) have long been utilized for uniform, pinhole-free conformal coatings. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We show room temperature copolymerization with previously untested comonomers during the CVD process. Samples were studied with wavelength dispersive analysis, FTIR, scanning variable angle ellipsometry, and x-ray diffraction. Copolymerizing chloro-p-xylylene with perfluoro-octyl methacrylate results in dielectric constants at optical frequencies as low as 2.19, compared to 2.68 for the homopolymer. Copolymerizing p-xylylene with 4-vinylbiphenyl resulted in films whose onset of weight loss in TGA measurements was 450 °C, compared to 270 °C for the homopolymer.

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

Structural and magnetic properties of pure and cobalt doped Gallium Nitride nanocrystals

2010 ◽  
Vol 1257 ◽  
Author(s):  
Vottikondala Ganesh ◽  
Suresh Sundaram ◽  
Krishnan Baskar
Keyword(s):  
Magnetic Properties ◽  
Gallium Nitride ◽  
Magnetic Measurements ◽  
Raw Materials ◽  
Ferromagnetic Behavior ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Magnetic Properties ◽  
Co Doped

AbstractIn the present study pure and doped gallium nitride (GaN) nanocrystals were synthesized using gallium trichloride (GaCl3), ethylene diamine tetra acetic acid (EDTA) and cobalt chloride as raw materials at a temperature of 900 °C in ammonia (NH3) atmosphere. The XRD spectrum for pure and cobalt doped GaN nanocrystals shows the formation of single phase wurtzite structure. No impurity phases were observed in the X-ray diffraction pattern for 5% Co doped sample whereas secondary phases were observed when the doping concentration exceeds 5 %. Shift in X-ray diffraction peaks were observed in Co doped samples towards lower angle side compared to pure GaN, it confirms that the Co atoms introduces in to the GaN lattice. Transmission electron microscopy images were taken for pure and Co doped GaN. Hexagonal morphology was observed in pure GaN samples. The average size of the particle was found to be ˜20 nm for pure and Co doped GaN. The magnetic measurements were carried out for the Co (5% & 10%) doped samples both at 10K and 300K. Clear hysteresis loop in the magnetization curve suggest the presence of ferromagnetic behavior in cobalt doped GaN. Temperature dependent magnetization (M-T) measurements were also carried out for doped samples using Super Conducting Quantum Interface Device (SQUID) from 10K to 300K The results have been discussed and correlated to structural and magnetic properties of the materials.

Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
Jen-Wei Hwang ◽  
Everett C. Phillips ◽  
John F. Evans ◽  
Scott A. Hanson ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical ◽  
Elemental Arsenic

ABSTRACTCyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Influence of Substrate Temperature on the Al and Zr Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 814 ◽  
pp. 601-606 ◽  
Author(s):  
Fei Huan ◽  
Jin Feng Leng ◽  
Zhi Chao Meng ◽  
Bin Sun ◽  
Wen Shuang He
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Influence Of Substrate ◽  
Co Doped

ZnO doped Al2O3and ZrO2(ZAZO) thin films were deposited by the radio frequency magnetron sputtering on substrate temperature with 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-probe tester. The results showed that the substrate temperature obviously influenced the grain size of ZAZO films. The ZnO thin film had the largest crystallization orientation for the (002) peak and the smallest FWHM value at substrate temperature of 250°C. As the temperature increasing, the resistance of films gradually decreased till reaching a minimum at 250°C and then rised. Due to the increasing of Al and Zr concentrations into ZnO lattice, the Al ions created an abundance number of free electrons in the ZnO lattice, and in turn, the electrical conductivity increased. In addition, the improvement of film in the crystalline state results in the film resistivity decreases.

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