scholarly journals A 2.53 NEF 8-bit 10 kS/s 0.5 μm CMOS Neural Recording Read-Out Circuit with High Linearity for Neuromodulation Implants

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 590
Author(s):  
Nishat Tarannum Tasneem ◽  
Ifana Mahbub
Keyword(s):  
Sampling Rate ◽  
Sar Adc ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Cmos Process ◽  
Noise Power ◽  
Neural Signal ◽  
Total Power Consumption ◽  
Signal Recording ◽  
Neural Signal Recording

This paper presents a power-efficient complementary metal-oxide-semiconductor (CMOS) neural signal-recording read-out circuit for multichannel neuromodulation implants. The system includes a neural amplifier and a successive approximation register analog-to-digital converter (SAR-ADC) for recording and digitizing neural signal data to transmit to a remote receiver. The synthetic neural signal is generated using a LabVIEW myDAQ device and processed through a LabVIEW GUI. The read-out circuit is designed and fabricated in the standard 0.5 μμm CMOS process. The proposed amplifier uses a fully differential two-stage topology with a reconfigurable capacitive-resistive feedback network. The amplifier achieves 49.26 dB and 60.53 dB gain within the frequency bandwidth of 0.57–301 Hz and 0.27–12.9 kHz to record the local field potentials (LFPs) and the action potentials (APs), respectively. The amplifier maintains a noise–power tradeoff by reducing the noise efficiency factor (NEF) to 2.53. The capacitors are manually laid out using the common-centroid placement technique, which increases the linearity of the ADC. The SAR-ADC achieves a signal-to-noise ratio (SNR) of 45.8 dB, with a resolution of 8 bits. The ADC exhibits an effective number of bits of 7.32 at a low sampling rate of 10 ksamples/s. The total power consumption of the chip is 26.02 μμW, which makes it highly suitable for a multi-channel neural signal recording system.

scholarly journals 14-Bit Fully Differential SAR ADC with PGA Used in Readout Circuit of CMOS Image Sensor

2021 ◽  
Vol 2021 ◽  
pp. 1-17
Author(s):  
Xiaowei Zhang ◽  
Wei Fan ◽  
Jianxiong Xi ◽  
Lenian He
Keyword(s):  
Sampling Rate ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sar Adc ◽  
Total Power ◽  
Cmos Process ◽  
Readout Circuit ◽  
Fully Differential ◽  
Total Power Consumption ◽  
The Impact

This paper proposes a 14-bit fully differential Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with a programmable gain amplifier (PGA) used in the readout circuit of CMOS image sensor (CIS). SAR ADC adopts two-step scaled-reference voltages to realize 14-bit conversion, aimed at reducing the scale of capacitor array and avoiding using calibration to mitigate the impact of offset and mismatch. However, the reference voltage self-calibration algorithm is applied on the design to guarantee the precision of reference voltages, which affects the results of conversion. The three-way PGA provides three types of gains: 3x, 4x, and 6x, and samples at the same time to get three columns of pixel signal and increase the system speed. The pixel array of the mentioned CIS is 1026 × 1024 , and the pixel pitch is 12.5   μ m × 12.5   μ m . The prototype chip is fabricated in the 180 nm CMOS process, and both digital and analog voltages are 3.3 V. The total area of the chip is 6.25 × 18.38  mm2. At 150 kS/s sampling rate, the SNR of SAR ADC is 71.72 dB and the SFDR is 82.91 dB. What is more, the single SAR ADC consumes 477.2 uW with the 4.8 V PP differential input signal and the total power consumption of the CIS is about 613 mW.

CMOS Amplifier for Neural Signal Recording Applications

2015 ◽  
Vol 645-646 ◽  
pp. 1279-1284
Author(s):  
Zhang Zhang ◽  
Zheng Xi Cheng ◽  
Yi Wei Zhuang
Keyword(s):  
Low Noise ◽  
Cmos Process ◽  
Differential Mode ◽  
Neural Signal ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Voltage Range ◽  
Cmos Amplifier ◽  
Signal Recording ◽  
Neural Signal Recording

A low power low noise CMOS amplifier with integrated filter for neural signal recording is designed and fabricated with CSMC 0.5 μm CMOS process. DC offsets introduced by electrode-tissue interface are rejected through a feedback low-pass filter. The bandwidth of the amplifier is in 3.5Hz-5.5KHz range, and the gain is about 48dB in the midband. AC input differential mode voltage range is 10mV, and DC input differential mode voltage range is 180mV. The amplifier can accommodate 180mV DC offsets drift and 10mV neural spikes. The neural probe array is integrated directly on the surface of the amplifier array chip, and is tested in saline solution, and also is implanted in rats in vivo , the results of the experiments show that the amplifier is suitable for neural signal recording. The power dissipation is about 14μW while consuming 0.16 mm2 of chip area, which satisfies implantable devices requirements.

A 160 nW 25 kS/s 9-bit SAR ADC for neural signal recording applications

2012 ◽  
Author(s):  
Anh Tuan Do ◽  
Chun Kit Lam ◽  
Yung Sern Tan ◽  
Kiat Seng Yeo ◽  
Jia Hao Cheong ◽  
...  
Keyword(s):  
Sar Adc ◽  
Neural Signal ◽  
Signal Recording ◽  
Neural Signal Recording

scholarly journals Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors

2020 ◽  
Vol 10 (1) ◽  
pp. 348 ◽  
Author(s):  
Donggeun You ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Kwonsang Han ◽  
Hyunwoo Heo ◽  
...  
Keyword(s):  
Low Noise ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Cmos Process ◽  
Frequency Noise ◽  
Readout Circuit ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Chopper Stabilization ◽  
Total Power Consumption

This paper presents a low-noise reconfigurable sensor readout circuit with a multimodal sensing chain for voltage/current/resistive/capacitive microsensors such that it can interface with a voltage, current, resistive, or capacitive microsensor, and can be reconfigured for a specific sensor application. The multimodal sensor readout circuit consists of a reconfigurable amplifier, programmable gain amplifier (PGA), low-pass filter (LPF), and analog-to-digital converter (ADC). A chopper stabilization technique was implemented in a multi-path operational amplifier to mitigate 1/f noise and offsets. The 1/f noise and offsets were up-converted by a chopper circuit and caused an output ripple. An AC-coupled ripple rejection loop (RRL) was implemented to reduce the output ripple caused by the chopper. When the amplifier was operated in the discrete-time mode, for example, the capacitive-sensing mode, a correlated double sampling (CDS) scheme reduced the low-frequency noise. The readout circuit was designed to use the 0.18-µm complementary metal-oxide-semiconductor (CMOS) process with an active area of 9.61 mm2. The total power consumption was 2.552 mW with a 1.8-V supply voltage. The measured input referred noise in the voltage-sensing mode was 5.25 µVrms from 1 Hz to 200 Hz.

scholarly journals A 13-Bit, 12-ps Resolution Vernier Time-to-Digital Converter Based on Dual Delay-Rings for SPAD Image Sensor

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 743
Author(s):  
Zunkai Huang ◽  
Jinglin Huang ◽  
Li Tian ◽  
Ning Wang ◽  
Yongxin Zhu ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Single Photon ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Cmos Process ◽  
Digital Converter ◽  
Delay Element ◽  
Time To Digital Converter ◽  
Total Power Consumption

A three-dimensional (3D) image sensor based on Single-Photon Avalanche Diode (SPAD) requires a time-to-digital converter (TDC) with a wide dynamic range and fine resolution for precise depth calculation. In this paper, we propose a novel high-performance TDC for a SPAD image sensor. In our design, we first present a pulse-width self-restricted (PWSR) delay element that is capable of providing a steady delay to improve the time precision. Meanwhile, we employ the proposed PWSR delay element to construct a pair of 16-stages vernier delay-rings to effectively enlarge the dynamic range. Moreover, we propose a compact and fast arbiter using a fully symmetric topology to enhance the robustness of the TDC. To validate the performance of the proposed TDC, a prototype 13-bit TDC has been fabricated in the standard 0.18-µm complementary metal–oxide–semiconductor (CMOS) process. The core area is about 200 µm × 180 µm and the total power consumption is nearly 1.6 mW. The proposed TDC achieves a dynamic range of 92.1 ns and a time precision of 11.25 ps. The measured worst integral nonlinearity (INL) and differential nonlinearity (DNL) are respectively 0.65 least-significant-bit (LSB) and 0.38 LSB, and both of them are less than 1 LSB. The experimental results indicate that the proposed TDC is suitable for SPAD-based 3D imaging applications.

Design and Layout of a High-Performance PWM Control Class D Amplifiers IC Systems

2012 ◽  
Vol 203 ◽  
pp. 469-473
Author(s):  
Ruei Chang Chen ◽  
Shih Fong Lee
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Design Flow ◽  
Total Power ◽  
Cmos Process ◽  
Low Power Circuits ◽  
Class D ◽  
Total Power Consumption ◽  
Power Circuits

This paper presents the design and implementation of a novel pulse width modulation control class D amplifiers chip. With high-performance, low-voltage, low-power and small area, these circuits are employed in portable electronic systems, such as the low-power circuits, wireless communication and high-frequency circuit systems. This class D chip followed the chip implementation center advanced design flow, and then was fabricated using Taiwan Semiconductor Manufacture Company 0.35-μm 2P4M mixed-signal CMOS process. The chip supply voltage is 3.3 V which can operate at a maximum frequency of 100 MHz. The total power consumption is 2.8307 mW, and the chip area size is 1.1497×1.1497 mm2. Finally, the class D chip was tested and the experimental results are discussed. From the excellent performance of the chip verified that it can be applied to audio amplifiers, low-power circuits, etc.

Wireless Interface at 5.7 GHz for Intra-Vehicle Communications

2012 ◽  
pp. 40-60
Author(s):  
J. P. Carmo ◽  
J. H. Correia
Keyword(s):  
Channel Capacity ◽  
Carrier Frequency ◽  
Spectrum Allocation ◽  
Total Power ◽  
Cmos Process ◽  
Rf Cmos ◽  
Rf Transceiver ◽  
Total Power Consumption ◽  
Multiple Frequencies ◽  
Wireless Interface

This chapter presents a wireless interface for intra-vehicle communications (data acquisition from sensors, control, and multimedia) at 5.7 GHz. As part of the wireless interface, a RF transceiver was fabricated in the UMC 0.18 µm RF CMOS process and when activated, it presents a total power consumption of 23 mW with the voltage-supply of 1.5 V. This allows the use of only a coin-sized battery for supplying the interface. The carrier frequency can be digitally selectable and take one of 16 possible frequencies in the range 5.42-5.83 GHz, adjusted in steps of 27.12 MHz. These multiple carriers allow a better spectrum allocation and at the same time will improve the channel capacity due to the possibility to allow multiple accesses with multiple frequencies.

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