scholarly journals (Ti,Al)O2 Whiskers Grown during Glow Discharge Nitriding of Ti-6Al-7Nb Alloy

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2658
Author(s):  
Krzysztof Szymkiewicz ◽  
Jerzy Morgiel ◽  
Łukasz Maj ◽  
Małgorzata Pomorska
Keyword(s):  
Surface Hardening ◽  
Surface Defects ◽  
Plasma Nitriding ◽  
Surface Roughening ◽  
Effective Surface ◽  
Plan View ◽  
Gas Nitriding ◽  
Transmission Electron ◽  
Temperature Window ◽  
20 Nm

Plasma nitriding of titanium alloys is capable of effective surface hardening at temperatures significantly lower than gas nitriding, but at a cost of much stronger surface roughening. Especially interesting are treatments performed at the lower end of the temperature window used in such cases, as they are least damaging to highly polished parts. Therefore identifying the most characteristic defects is of high importance. The present work was aimed at identifying the nature of pin-point bumps formed at the glow discharged plasma nitrided Ti-6Al-7Nb alloy using plan-view scanning and cross-section transmission electron microscopy methods. It helped to establish that these main surface defects developed at the treated surface are (Ti,Al)O2 nano-whiskers of diameter from 20 nm to 40 nm, and length up to several hundreds of nanometers. The performed investigation confirmed that the surface imperfection introduced by plasma nitriding at the specified range should be of minor consequences to the mechanical properties of the treated material.

scholarly journals Misfit Dislocations in Epitaxial Ni/Cu Bilayer and Cu/Ni/Cu Trilayer Thin Films

2001 ◽  
Vol 673 ◽  
Author(s):  
Tadashi Yamamoto ◽  
Amit Misra ◽  
Richard G. Hoagland ◽  
Mike Nastasi ◽  
Harriet Kung ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Thickness ◽  
Misfit Dislocation ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Plan View ◽  
Transmission Electron ◽  
Dislocation Arrays ◽  
20 Nm

ABSTRACTMisfit dislocations at the interfaces of bilayer (Ni/Cu) and trilayer (Cu/Ni/Cu) thin films were examined by plan-view transmission electron microscopy (TEM). In the bilayers, the spacing of misfit dislocations was measured as a function of Ni layer thickness. The critical thickness, at which misfit dislocations start to appear with the loss of coherency, was found to be between 2 and 5 nm. The spacing of the misfit dislocations decreased with increasing Ni layer thickness and reached a plateau at the thickness of 30 nm. The minimum spacing is observed to be about 20 nm. A g·b analysis of the cross-grid of misfit dislocations revealed 90° Lomer dislocations of the <110>{001} type lying in the (001) interface plane at a relatively large thickness of the Ni layer, but 60° glide dislocations of the <110>{111} type at a relatively small thickness of the Ni layer. In the trilayers, misfit dislocations formed at both interfaces. The spacing of the misfit dislocation is in agreement with that of the bilayers with a similar Ni layer thickness. The misfit dislocation arrays at the two interfaces, having the same line directions, are 60° dislocations with edge components with opposite signs but are displaced with respect to each other in the two different interface planes. This suggests that interactions of the strain fields of the dislocations have a strong influence on their positions at the interface.

scholarly journals Transmission Electron Microscopy Study of Thick Copper-304 Stainless Steel Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
M. A. Wall ◽  
T. W. Barbee ◽  
T. Weihs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
304 Stainless Steel ◽  
Orientation Relationships ◽  
Plan View ◽  
Transmission Electron ◽  
Bcc Structure ◽  
20 Nm ◽  
Fcc Structure

ABSTRACTThick (10 to 25 μm), free-standing, equal layer thickness, Copper(Cu)-304 Stainless Steel(SS) multilayer foils, having periods of lnm to 100 nm, synthesized by magnetron sputter deposition, have been examined by plan view and cross-sectional transmission electron microscopy. Multilayer growth morphology, individual layer structure and crystallographic phase orientation relationships were characterized in this study. Electron Energy Loss filtered imaging of a 20 nm period multilayer cross-section was also performed and showed that nickel had diffused into the Cu layers from the SS during synthesis. X-ray powder diffraction scans were performed and analyzed. A pure deposit of 304SS was synthesized and had a metastable BCC structure. Multilayer samples having periods of 20 nm were found to have a coherent layered Cu(FCC)- SS(FCC) structure. At larger periods (50 & 100 nm) a bimodal Cu(FCC)-SS(FCC & BCC) structure was formed. These observations show that the 304SS will grow with a metastable BCC structure when sputter deposited. When layered with Cu(FCC) the 304SS has its equilibrium FCC structure at layer thicknesses up to 10nm as a result of epitaxy with the copper. At larger SS layer thicknesses the SS appears to locally transform to the metastable BCC structure during synthesis, refining the grain structure of the depositing SS layer and the subsequent Cu layer. This transformation significantly increases the strength of the larger period multilayer.

Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films

2006 ◽  
Vol 527-529 ◽  
pp. 399-402
Author(s):  
Tatsuya Okada ◽  
Kouichi Okamoto ◽  
Kengo Ochi ◽  
Kouichi Higashimine ◽  
Tsunenobu Kimoto
Keyword(s):  
Plasma Etching ◽  
Surface Defects ◽  
Film Surface ◽  
Plan View ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Entire Thickness ◽  
Morphological Defects ◽  
Diffraction Patterns ◽  
Film Interface

Plan-view transmission electron microscopy (TEM) was applied to investigate the origin of surface defects in 4H-SiC homoepitaxial films. Their origin existed at the substrate/epi-film interface. Hence, almost the entire thickness of the epi-film was removed by plasma etching leaving a very thin film. Then, the etched epi-crystal was thinned from the substrate side so that we could observe the crystallographic imperfections at the substrate/epi-film interface in plan-view TEM. Morphological features of the epi-film surface remained unchanged after the plasma etching process. Hence, one-to-one correspondence between surface defects and crystallographic imperfections was confirmed by comparing optical micrographs and TEM images. Crystallographic imperfections associated with “carrot defects” were observed. They were composed of stacking faults on the (0001) plane and partial dislocations bounding them. These imperfections originated from foreign particles at the interface. From X-ray energy-dispersive spectrometry (XEDS), it was confirmed that particles contained zirconium (Zr). Selected area diffraction patterns showed that the particles were crystalline.

Structural and Magnetic Characterization of Bi-Substituted Garnet on Si and GaAs

1995 ◽  
Vol 384 ◽  
Author(s):  
Ken M. Ring ◽  
A.L. Shapiro ◽  
F. Deng ◽  
R.S. Goldman ◽  
F. Spada ◽  
...  
Keyword(s):  
Hysteresis Loops ◽  
Film Structure ◽  
X Ray Diffraction ◽  
Plan View ◽  
Transmission Electron ◽  
Potential Applications ◽  
Novel Material ◽  
Sputter Deposited ◽  
20 Nm

ABSTRACTNovel material structures that combine magneto-optic (MO) and semiconductor devices have potential applications in monolithic microwave systems and optoelectronics. We have investigated the materials issues pertaining to the film structure, interface uniformity, and magnetic/MO properties of (BiDy)3(FeGa)5O12 (Bi-DyIG) thin films sputter deposited on Si and GaAs. The rapid thermally annealed films were polycrystalline with a nominal grain size of 20 nm. The magnetic and MO properties were strongly dependent on the type of substrate such that square hysteresis loops and coercivities of 0.1 to 0.9 kOe were observed for Bi-DyIG/Si structures while Bi-DyIG/GaAs structures showed much lower coercivity values (0.03 kOe). A comparison of the magnetic properties, microstructure and substrate composition was carried out with plan-view and cross-section transmission electron microscopy, as well as electron and x-ray diffraction. The results suggest that grain orientation effects, stress, and compositional inhomogeneity due to interfacial reactions or diffusion introduced by the substrate strongly influence the magnetic and MO properties of the films.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

Utilizing Nanoprobing and Circuit Diagnostics to Identify Key Failure Mechanism of Otherwise Nonvisible Defects in 20 nm Logic Devices

2014 ◽  
Author(s):  
M.K. Dawood ◽  
C. Chen ◽  
P.K. Tan ◽  
S. James ◽  
P.S. Limin ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Contact Layer ◽  
Fault Isolation ◽  
Tem Analysis ◽  
Logic Devices ◽  
Technology Advancement ◽  
Transmission Electron ◽  
Voltage Contrast ◽  
Almost All ◽  
20 Nm

Abstract In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of passive voltage contrast (PVC) failed to identify any abnormality in the devices. Technology advancement makes identifying failure mechanisms increasingly more challenging using conventional methods of physical failure analysis (PFA). Almost all PFA cases for 20nm technology node devices and beyond require Transmission Electron Microscopy (TEM) analysis. Before TEM analysis can be performed, fault isolation is required to correctly determine the precise failing location. Isolated transistor probing was performed on the suspected logic NMOS and PMOS transistors to identify the failing transistors for TEM analysis. In this paper, nanoprobing was used to isolate the failing transistor of a logic cell. Nanoprobing revealed anomalies between the drain and bulk junction which was found to be due to contact gouging of different severities.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

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