Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Keyword(s):
In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (ION) and low-level OFF-state current (IOFF); ambipolar current (IAMB). In detail, its ION is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The IAMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.
2020 ◽
Vol 20
(7)
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pp. 4409-4413
2020 ◽
Vol 20
(7)
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pp. 4298-4302
2020 ◽
Vol 20
(7)
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pp. 4182-4187
2021 ◽
2011 ◽
Vol 29
(3)
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pp. 032203
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