scholarly journals A Novel RFID Authentication Protocol Based on Reconfigurable RRAM PUF

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1560
Author(s):  
Qirui Ren ◽  
Xiangqu Fu ◽  
Hao Wu ◽  
Kaiqi Yang ◽  
Dengyun Lei ◽  
...  

Radio frequency identification technology (RFID) has empowered a wide variety of automation industries. Aiming at the current light-weight RFID encryption scheme with limited information protection methods, combined with the physical unclonable function (PUF) composed of resistive random access memory (RRAM), a new type of high-efficiency reconfigurable strong PUF circuit structure is proposed in this paper. Experimental results show that the proposed PUF shows an almost ideal value (50%) of inter-chip hamming distance (HD) (µ/σ = 0.5001/0.0340) among 1000 PUF keys, and intra-chip HD results are very close to the ideal value (0). The bit error rate (BER) is as low as 3.8×10−6 across one million challenges. Based on the RRAM PUF, we propose and implement a light weight RFID authentication protocol. By virtue of RRAM’s model ability, the protocol replaces the One-way Hash Function with a response chain mutual encryption algorithm. The results of test and analysis show that the protocol can effectively resist multiple threats such as physical attacks, replay attacks, tracking attacks and asynchronous attacks, and has good stability. At the same time, based on RRAM’s unique resistance variability, PUF also has the advantage of being reconfigurable, providing good security for RFID tags.

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550244 ◽  
Author(s):  
Yingtao Li ◽  
Rongrong Li ◽  
Peng Yuan ◽  
Xiaoping Gao ◽  
Enzi Chen

In this paper, a low-cost Ti/TiO2/HfO2/TiO2/Ti stack structure is proposed as a selector for bipolar resistive random access memory (RRAM) cross-bar array applications. We demonstrate reproducible resistive switching characteristics with significant nonlinearity and good uniformity in the one selector and one resistor (1S1R) structure device that integrate the bidirectional selector with a bipolar Pt/Ti/HfO2/Pt RRAM device. These results provide a good point of reference for evaluating the potential low-cost applications in bipolar RRAM cross-bar array.


2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  

2020 ◽  
Vol 86 (18) ◽  
Author(s):  
Lingxin Kong ◽  
Qing Wang ◽  
Zixin Deng ◽  
Delin You

ABSTRACT Xantholipin (compound 1), a polycyclic xanthone antibiotic, exhibited strong antibacterial activities and showed potent cytotoxicity. The biosynthetic gene cluster of compound 1 has been identified in our previous work, and the construction of xanthone nucleus has been well demonstrated. However, limited information of the halogenation involved in compound 1 biosynthesis is available. In this study, based on the genetic manipulation and biochemical assay, we characterized XanH as an indispensable flavin adenine dinucleotide (FAD)-dependent halogenase (FDH) for the biosynthesis of compound 1. XanH was found to be a bifunctional protein capable of flavin reduction and chlorination and exclusively used the NADH. However, the reduced flavin could not be fully and effectively utilized, and the presence of an extra flavin reductase (FDR) and chemical-reducing agent could promote the halogenation. XanH accepted its natural free-standing substrate with angular fused polycyclic aromatic systems. Meanwhile, it exhibited moderate halogenation activity and possessed high substrate specificity. The requirement of extra FDR for higher halogenation activity is tedious for future engineering. To facilitate efforts in engineering XanH derivative proteins, we constructed the self-sufficient FDR-XanH fusion proteins. The fusion protein E1 with comparable activities to that of XanH could be used as a good alternative for future protein engineering. Taken together, these findings reported here not only improve the understanding of polycyclic xanthones biosynthesis but also expand the substrate scope of FDH and pave the way for future engineering of biocatalysts for new active substance synthesis. IMPORTANCE Halogenation is important in medicinal chemistry and plays an essential role in the biosynthesis of active secondary metabolites. Halogenases have evolved to catalyze reactions with high efficiency and selectivity, and engineering efforts have been made to engage the selective reactivity in natural product biosynthesis. The enzymatic halogenations are an environmentally friendly approach with high regio- and stereoselectivity, which make it a potential complement to organic synthesis. FDHs constitute one of the most extensively elucidated class of halogenases; however, the inventory awaits to be expanded for biotechnology applications and for the generation of halogenated natural product analogues. In this study, XanH was found to reduce flavin and halogenated the freely diffusing natural substrate with an angular fused hexacyclic scaffold, findings which were different from those for the exclusively studied FDHs. Moreover, the FDR-XanH fusion protein E1 with comparable reactivity to that of XanH serves as a successful example of genetic fusions and sets an important stage for future protein engineering.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng-Cheng Yen ◽  
Chia-Jung Lee ◽  
Kang-Hsiang Liu ◽  
Yi Peng ◽  
Junfu Leng ◽  
...  

AbstractField-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.


Sign in / Sign up

Export Citation Format

Share Document