scholarly journals Growth Properties of Carbon Nanowalls on Nickel and Titanium Interlayers

Molecules ◽  
2022 ◽  
Vol 27 (2) ◽  
pp. 406
Author(s):  
May Tran Thi ◽  
Seokhun Kwon ◽  
Hyunil Kang ◽  
Jung-Hyun Kim ◽  
Yong-Kyu Yoon ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Light Transmittance ◽  
Cross Sectional ◽  
Coated Glass ◽  
Glass Substrates ◽  
Vis Spectroscopy ◽  
Carbon Nanowalls

This research is conducted in order to investigate the structural and electrical characteristics of carbon nanowalls (CNWs) according to the sputtering time of interlayers. The thin films were deposited through RF magnetron sputtering with a 4-inch target (Ni and Ti) on the glass substrates, and the growth times of the deposition were 5, 10, and 30 min. Then, a microwave plasma-enhanced chemical vapor deposition (PECVD) system was used to grow CNWs on the interlayer-coated glass substrates by using a mixture of H2 and CH4 gases. The FE-SEM analysis of the cross-sectional and planar images confirmed that the thickness of interlayers linearly increased according to the deposition time. Furthermore, CNWs grown on the Ni interlayer were taller and denser than those grown on the Ti interlayer. Hall measurement applied to measure sheet resistance and conductivity confirmed that the electrical efficiency improved significantly as the Ni or Ti interlayers were used. Additionally, UV-Vis spectroscopy was also used to analyze the variations in light transmittance; CNWs synthesized on Ni-coated glass have lower average transmittance than those synthesized on Ti-coated glass. Based on this experiment, it was found that the direct growth of CNW was possible on the metal layer and the CNWs synthesized on Ni interlayers showed outstanding structural and electrical characterizations than the remaining interlayer type.

Characterization Analysis According to Growth Temperature of Carbon Nanowall on Metal Coated Substrate for Electrode Application of Energy Storage

2017 ◽  
Vol 904 ◽  
pp. 115-119
Author(s):  
Jong Kug Park ◽  
Won Seok Choi ◽  
Hyun Suk Hwang ◽  
Kyoung Hak Lee ◽  
Jung Hyun Kim ◽  
...  
Keyword(s):  
Energy Storage ◽  
Growth Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Nickel Layer ◽  
Cross Sectional ◽  
Storage Media ◽  
Carbon Nanowalls ◽  
Core Storage

Secondary cells, which are the core storage media of energy storage systems (ESS), and carbon nanowalls (CNWs), which are expected to improve the performance of supercapacitors while being used as their electrodes, were investigated in this study. CNWs were directly grown on the substrate, and the substrate was a Si wafer with a nickel layer deposited on top of it. The nickel layer was deposited with the RF-magnetron sputtering method using a 4-inch Ni target. The CNWs were grown on the prepared substrate using microwave plasma-enhanced chemical vapor deposition (PECVD). The substrate temperature was changed from 550 to 800°C by 50°C increments to identify the growth characteristics according to the growth temperature. The surficial and cross-sectional images according to the temperature were analyzed using a field emission scanning electron microscope (FE-SEM). It was confirmed that the density of the CNWs increased along with the temperature. Especially, it was confirmed that the density increased dramatically at 750°C or higher.

scholarly journals Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

Energies ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4759 ◽  
Author(s):  
Hyeokjoo Choi ◽  
Seokhun Kwon ◽  
Hyunil Kang ◽  
Jung Hyun Kim ◽  
Wonseok Choi
Keyword(s):  
Energy Storage ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Storage Systems ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Energy Storage Systems ◽  
Carbon Nanowalls ◽  
Carbon Based Nanomaterials

Carbon nanowalls (CNWs), which are used as electrodes for secondary batteries in energy storage systems (ESSs), have the widest reaction surface area among the carbon-based nanomaterials, but their application is rare due to their low adhesion with substrates. Indium tin oxide (ITO), a representative transparent conducting oxide (TCO) material, is widely used as the electrode for displays, solar cells, etc. Titanium nitride (TiN) is a well-used material as an interlayer for improving the adhesion between two materials. In this study, ITO or TiN thin films were used as an interlayer to improve the adhesion between a CNW and a substrate. The interlayer was deposited on the substrate using a radio frequency (RF) magnetron sputtering system with a four-inch TiN or ITO target. CNWs were grown on the interlayer-coated substrate using a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system with a mixture of methane (CH4) and hydrogen (H2) gases. The adhesion of the CNW/interlayer/substrate structure was observed through ultrasonic cleaning.

scholarly journals Preparation and characterization of TiO2/carbon nanowall composite on a transparent substrate

2018 ◽  
Vol 10 (2) ◽  
pp. 54 ◽  
Author(s):  
Mattia Pierpaoli ◽  
Aneta Lewkowicz ◽  
Mateusz Ficek ◽  
Maria Letizia Ruello ◽  
Robert Bogdanowicz
Keyword(s):  
Microwave Plasma ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Titanium Isopropoxide ◽  
Photocatalytic Ability ◽  
Boron Doped ◽  
Vis Spectroscopy ◽  
Vapor Deposition Technique ◽  
Carbon Nanowalls

A transparent titanium dioxide and carbon nanowall composite (B-CNW/TiO2) material was fabricated by growing boron-doped carbon nanowalls (B-CNWs) on quartz glass with microwave plasma-enhanced chemical vapor deposition technique, followed by sol-gel deposition using titanium isopropoxide as a TiO2 precursor. Different layer thicknesses were fabricated. Samples were investigated by spectroscopic ellipsometry and UV-VIS spectroscopy. Results shows how the B-CNW thickness affects the optical transmittance, bandgap and electrical conductivity. Full Text: PDF ReferencesWang, H., Quan, X., Yu, H. & Chen, S. Fabrication of a TiO2/carbon nanowall heterojunction and its photocatalytic ability. Carbon N. Y. 46, 1126–1132 (2008). CrossRef Fujishima, A., Zhang, X. & Tryk, D. A. TiO2 photocatalysis and related surface phenomena. Surf. Sci. Rep. 63, 515–582 (2008). CrossRef Pierpaoli, M., Giosuè, C., Ruello, M. L. & Fava, G. Appraisal of a hybrid air cleaning process. Environ. Sci. Pollut. Res. 24, 12638–12645 (2017). CrossRef Sobaszek, M. et al. Diamond Phase (sp3-C) Rich Boron-Doped Carbon Nanowalls (sp2-C): Physicochemical and Electrochemical Properties. J. Phys. Chem. C 121, 20821–20833 (2017). CrossRef Lewkowicz, A. et al. Thickness and structure change of titanium(IV) oxide thin films synthesized by the sol–gel spin coating method. Opt. Mater. (Amst). 36, 1739–1744 (2014). CrossRef Tauc, J. Optical properties and electronic structure of amorphous Ge and Si. Mater. Res. Bull. 3, 37–46 (1968). CrossRef

Investigation of the Field Emission Stability of Sphere-Like Diamond Microcrystalline-Aggregates Films

2014 ◽  
Vol 1035 ◽  
pp. 3-6
Author(s):  
Jin Hai Gao ◽  
Zhen Li ◽  
Wu Qing Zhang
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Diffraction Spectrum ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Field Emission Properties

The sphere-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti metal layer was used as substrates. The fabricated diamond microcrystalline aggregates were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the sphere-like diamond microcrystalline-aggregates films exhibited good electron emission properties. The turn-on field was only 0.55V/μm, and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. After several cycling operations, the field emission tended to stable characteristics of current versus voltage. The stability evolvement and mechanism are investigated relating to microstructure of the sphere-like diamond microcrystalline-aggregates films.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Characteristics of Carbon Nanowalls According to the Indium Tin Oxide Interlayer Thickness

2020 ◽  
Vol 12 (8) ◽  
pp. 1261-1264
Author(s):  
Hyeokjoo Choi ◽  
Chiwon Choi ◽  
Seok Hun Kwon ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Adhesive Force ◽  
Limited Range ◽  
Interlayer Thickness ◽  
Washing Machine ◽  
Carbon Nanowalls ◽  
Contact Angle Analysis

Materials with low adhesion have a limited range of applications. To solve this problem, the stress can be alleviated by inserting an interlayer between the substrate and the semiconductor material. As such, the adhesion can also be improved by depositing an interlayer between the carbon nanowall (CNW) with a low adhesive force and the substrate. In this study, indium tin oxide (ITO), whose thickness was controlled via radio frequency (RF) magnetron sputtering on the substrate, was used as an interlayer, and CNWs were grown using microwaveplasma-enhanced chemical vapor deposition (MPECVD) with a mixture of methane (CH4) and hydrogen (H2) gases. To confirm the adhesion between the CNWs and the substrate according to the thickness of the ITO interlayer, the dissociation of the CNWs was confirmed using an ultrasonic washing machine. Hall measurement was used to investigate the electrical properties. Afterwards, to analyze the change in the surface structure, contact angle analysis and field emission scanning electron microscopy (FESEM) analysis performed.

Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3041-3049 ◽  
Author(s):  
C.J. Chen ◽  
L. Chang ◽  
T.S. Lin ◽  
F.R. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Layer ◽  
Chemical Vapor Deposition Method ◽  
Interfacial Region ◽  
Cross Sectional ◽  
Evolution Of Microstructure

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.

Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions

2011 ◽  
Vol 679-680 ◽  
pp. 524-527 ◽  
Author(s):  
Masaki Goto ◽  
Akira Koga ◽  
Kazuhiro Yamada ◽  
Yoshimine Kato ◽  
Kungen Teii
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Moderate Pressure ◽  
Cross Sectional ◽  
Si Substrates ◽  
Current Voltage ◽  
In The Beginning ◽  
P Type ◽  
20 Nm

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (~20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

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