scholarly journals Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 636 ◽  
Author(s):  
Chien-Chen Diao ◽  
Chun-Yuan Huang ◽  
Cheng-Fu Yang ◽  
Chia-Ching Wu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Nickel Oxide ◽  
Indium Tin Oxide ◽  
Heterojunction Diode ◽  
X Ray Diffraction ◽  
Photoelectric Device ◽  
Evaporation Ratio ◽  
Device Applications ◽  
P Type

In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)2·6H2O, and LiNO3·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 °C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke’s formula, and the maximum value was found to be 5.3 × 10−6 Ω−1. FOM results revealed that the L2NiO thin films annealed at 600 °C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current–voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 × 10−4 A/cm2 (at 1.1 V), and an ideality factor of n = 0.46.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Electrochromic Nickel Oxide-Based Thin Films Deposited by Chemical Bath

2008 ◽  
Vol 55 ◽  
pp. 24-29 ◽  
Author(s):  
Arturo Mendoza-Galván ◽  
M.A. Vidales-Hurtado
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Indium Tin Oxide ◽  
Nitrate Solution ◽  
Visible Range ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
Optical Contrast ◽  
Glass Substrates

Nickel oxide-based thin films were deposited onto indium-tin oxide (ITO) coated glass substrates by the chemical bath method. The synthesis, based on the decomposition of urea in an aqueous nickel nitrate solution, promotes the deposition of the turbostratic -Ni(OH)2 phase. The electrochromic behavior of films obtained from low and high urea concentrations was tested after air annealing at temperatures of 250 and 300 °C. Using cyclic voltammetry, chronoamperometry and in-situ single wavelength transmittance it is shown that the films exhibit good reversibility and coloration efficiency. Transmittance spectra in the visible range show the high optical contrast of the films. It was found that in films annealed at 250 °C the bleached-colored switching is between the Ni(OH)2 and -NiOOH phases. Films annealed at 300 °C are comprised by a Ni(OH)2-NiO mixture and Ni2O3 units or the -NiOOH phase are responsible for coloring depending on urea concentration in solution. The -NiOOH phase was clearly identified in over-colored films. X-ray diffraction, Raman scattering, and infrared reflectance were used for phase identification.

scholarly journals Isochronal Studies of the Structural and Electrical Properties of CdTe Films

2011 ◽  
Vol 8 (1) ◽  
pp. 134-140
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
P Type

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

scholarly journals Effects of Preparation Conditions on the CuInS2Films Prepared by One-Step Electrodeposition Method

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Liu Cao ◽  
Qian Sun ◽  
Yuebin Cao
Keyword(s):  
Thin Films ◽  
Sulfur Content ◽  
Indium Tin Oxide ◽  
Deposition Potential ◽  
X Ray Diffraction ◽  
Preparation Conditions ◽  
Sulfurization Temperature ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

CuInS2thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySzprecursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ratio, sulfurization temperature, and sulfur content on the CuInS2thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

scholarly journals Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films

2014 ◽  
Vol 11 (3) ◽  
pp. 1257-1260
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
P Type

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and from 0.096 to 0. 162 eV with increasing of annealing temperature from 343K to 363K, respectively. Hall measurements showed that all the films are p-type.

scholarly journals Effect of selenization time on optical, electrical properties and structure of CZTSSe thin films

2020 ◽  
Vol 5 (1) ◽  
pp. first
Author(s):  
Tuấn Anh Đào ◽  
Kiều Loan Phan Thị ◽  
Tuấn Hùng Lê Vũ ◽  
Hữu Kế Nguyễn
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hole Concentration ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Energy Hole ◽  
High Crystallinity ◽  
Photovoltaic Application ◽  
Coating Method ◽  
P Type

In this paper, we present a fabrication process of high crystallinity CZTSSe absorber layer. The CZTS structure is firstly prepared by spin-coating method, and then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. The Se powder has been loaded into graphite box and used as source of selenizing vapors. Keeping the annealing temperature as constant, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated by changing the annealing time. X-ray diffraction revealed that these thin films are high crystallinity and strong preferential orientation along the (112) direction. The Raman spectra show the presence of the kesterite CZT Se phase which confirm the linkage of Se in structure. The band gaps (Eg) of the CZT Se thin films varied from 1,19 to 1.62 eV depend on the selenization times. At optimal annealing times, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1,19 eV, 2,68 x 1019 cm-3 and 0,86Ω.cm respectively which are suitable for photovoltaic application.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

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