Electrochromic Nickel Oxide-Based Thin Films Deposited by Chemical Bath

2008 ◽  
Vol 55 ◽  
pp. 24-29 ◽  
Author(s):  
Arturo Mendoza-Galván ◽  
M.A. Vidales-Hurtado
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Indium Tin Oxide ◽  
Nitrate Solution ◽  
Visible Range ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
Optical Contrast ◽  
Glass Substrates

Nickel oxide-based thin films were deposited onto indium-tin oxide (ITO) coated glass substrates by the chemical bath method. The synthesis, based on the decomposition of urea in an aqueous nickel nitrate solution, promotes the deposition of the turbostratic -Ni(OH)2 phase. The electrochromic behavior of films obtained from low and high urea concentrations was tested after air annealing at temperatures of 250 and 300 °C. Using cyclic voltammetry, chronoamperometry and in-situ single wavelength transmittance it is shown that the films exhibit good reversibility and coloration efficiency. Transmittance spectra in the visible range show the high optical contrast of the films. It was found that in films annealed at 250 °C the bleached-colored switching is between the Ni(OH)2 and -NiOOH phases. Films annealed at 300 °C are comprised by a Ni(OH)2-NiO mixture and Ni2O3 units or the -NiOOH phase are responsible for coloring depending on urea concentration in solution. The -NiOOH phase was clearly identified in over-colored films. X-ray diffraction, Raman scattering, and infrared reflectance were used for phase identification.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Electrochromic Nickel Hydroxide Thin Films Chemically Deposited

2006 ◽  
Vol 972 ◽  
Author(s):  
Monica Araceli ◽  
Vidales-Hurtado ◽  
Arturo Mendoza
Keyword(s):  
Thin Films ◽  
Nickel Hydroxide ◽  
Switching Time ◽  
Electrical Potential ◽  
Processing Conditions ◽  
Optical Contrast ◽  
Glass Substrates ◽  
Colored State ◽  
Ammonia Complex

AbstractNickel hydroxide thin films were deposited on ITO-coated glass substrates by the chemical bath deposition method. Two formulations using nickel nitrate were employed to obtain the films. The first one is through coordination compounds by using an ammonia complex producing the well crystallized phase β(II)-Ni(OH)2. The second formulation is based on the decomposition of urea at temperatures above of 90 °C, which promotes the deposition of the turbostratic phase α(II)- Ni(OH)2. After thermal annealing in air at temperatures of 250-300 °C, the β(II) films retain their polycrystalline structure, while the α(II) films are partially transformed to NiO. The electrochromic behavior of the films was tested by cyclic voltammetry in a three electrodes configuration cell. Also, chronoamperometry and in-situ single wavelength transmittance measurements were carried out to evaluate the switching time response. From Raman spectroscopy the structural transformations between colored and blanched states were studied. In the colored state most of the films show a mixture of β(III) and γ(III) phases of NiOOH, and in one case the Ni2O3 phase was found. It is shown that the films can exhibit high optical contrast depending on the processing conditions and electrical potential applied.

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

scholarly journals Effect of Ag nanoparticles on R6G laser dye hosted by PMMA polymerized by plasma jet

2019 ◽  
Vol 14 (29) ◽  
pp. 27-36
Author(s):  
Hammad R. Humud
Keyword(s):  
Thin Films ◽  
Silver Nanoparticles ◽  
Laser Dye ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Visible Absorption ◽  
Interferometric Method ◽  
Glass Substrates ◽  
Afm Analysis

This work aim to prepare Ag/R6G/PMMA nanocomposite thinfilms by In-situ plasma polymerization and study the changes in theoptical properties of fluorophore due to the presence of Agnanoparticles structures in the vicinity of the R6G laser dye. Theconcentrations of R6G dye/MMA used are: 10-4M solutions wereprepared by dissolving the required quantity of the R6G dye inMMAMonomer. Then Silver nanoparticles with 50 average particlessize were mixed with MMAmonomer with concentration of 0.3, 0.5,0.7wt% to get R6G silver/MMA in liquid phase. The films weredeposited on glass substrates by dielectric barrier discharge plasmajet. The Ag/R6G/PMMA nanocomposite thin films werecharacterization by UV-Visible absorption spectra by using a doublebeam UV-Vis-NIR Spectrophotometer and fluorescenceSpectrophotometer. The thin films surface morphological analysis iscarried out by employing an AFM and SEM. the structure analysisare achieved by X-ray diffraction. The thickness of the films wasmeasured by optical interferometric method. AFM analysis showsthat the surface roughness of plasma polymerized pure PMMA thinfilms was 2.7 nm and for (10-4 R6G + 0.7wt% Ag)Ag/R6G/PMMAthin films was 4.16 nm. The SEM images were indicates that Agnanoparticles (NPs) disperse in the PMMA matrix with uniformdistribution and formed mostly spherical NPs and slightlyagglomerate. Also the silver nanoparticles with 0.7wt%concentration enhances the absorption process by 2.3 times and thefluorescence by 1.7 times. it can be conclude, that the addition of lowconcentrations of silver nanoparticles to the PMMA/ R6G matrix waschanging the optical properties of the prepared nanocomposite thinfilms.

scholarly journals Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 636 ◽  
Author(s):  
Chien-Chen Diao ◽  
Chun-Yuan Huang ◽  
Cheng-Fu Yang ◽  
Chia-Ching Wu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Nickel Oxide ◽  
Indium Tin Oxide ◽  
Heterojunction Diode ◽  
X Ray Diffraction ◽  
Photoelectric Device ◽  
Evaporation Ratio ◽  
Device Applications ◽  
P Type

In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)2·6H2O, and LiNO3·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 °C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke’s formula, and the maximum value was found to be 5.3 × 10−6 Ω−1. FOM results revealed that the L2NiO thin films annealed at 600 °C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current–voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 × 10−4 A/cm2 (at 1.1 V), and an ideality factor of n = 0.46.

Co-Electrodeposition and Characterization of Ag-Ag2S-PbS Thin Films on Indium-Tin-Oxide Coated Glass

2014 ◽  
Vol 900 ◽  
pp. 397-400 ◽  
Author(s):  
Yuan Ming Zhang ◽  
Lin Chen ◽  
Hong Cheng Pan
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ethylenediaminetetraacetic Acid ◽  
Disodium Salt ◽  
Metallic Silver ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coated Glass ◽  
Glass Substrates

The Ag-Ag2S-PbS thin films were co-electrodeposited on indium-tin-oxide (ITO) coated glass substrates from aqueous solutions containing 0.01 M AgNO3, 0.01 M Pb (NO3)2, 0.1 M Na2S2O3, 0.02 M ethylenediaminetetraacetic acid disodium salt, and 0.5 M Na2SO4. X-ray diffraction (XRD), scanning electron microscopy (SEM), and cyclic voltammetry (CV) were used to investigate the Ag-Ag2S-PbS thin films. The X-ray diffraction analysis demonstrated the presence of cubic structure of metallic silver, acanthite Ag2S, and cubic PbS, which is consistent with the CV analysis. The effect of different Ag+/Pb2+ratios on the morphology and composition of the Ag-Ag2S-PbS thin films were also studied.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

Synthesis and Characterization of Au-CdS Composite Thin Films for Photoelectrochemical Sensing of Hg2+ Ions

2015 ◽  
Vol 1088 ◽  
pp. 91-95
Author(s):  
Ping Li ◽  
Shan Huang ◽  
Hong Cheng Pan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Limit Of Detection ◽  
X Ray Diffraction ◽  
Simple Method ◽  
Composite Thin Films ◽  
Glass Substrates ◽  
Vis Spectroscopy ◽  
Cds Thin Films

This article presents a simple method for fabrication of Au-CdS composite thin films onto indium-tin-oxide (ITO) coated glass substrates. The method starts with electrodeposition of CdS thin films onto ITO substrates and followed by spontaneous growth of Au nanoparticles onto the CdS surface in solutions containing AuCl4- ions. X-ray diffraction (XRD) and UV-vis spectroscopy were used to investigate the Au-CdS thin films. The photoelectrochemical property and sensing for Hg2+ ions of the Au-CdS/ITO were studied. The electrode exhibits a low limit of detection of 2.5 μM and a high selectivity for Hg2+ ions, even in the presence of a large excess (1000-fold) of other metal (Na+, K+, Ca2+, Mg2+, Cd2+, Pb2+, and Zn2+) ions.

Structural and Optical Properties of CdS Thin Films Grown by Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Sizes ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.

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