scholarly journals Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1165 ◽  
Author(s):  
Ho-young Jeong ◽  
Seung-hee Nam ◽  
Kwon-shik Park ◽  
Soo-young Yoon ◽  
Chanju Park ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atom Probe ◽  
Indium Gallium Zinc Oxide ◽  
Threshold Voltage Shift ◽  
Oxide Electronics ◽  
Information Displays ◽  
Significant Performance ◽  
Atom Probe Tomography Analysis ◽  
Bias Temperature Stress

We report the performance improvement of low-temperature coplanar indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs) with a maximum process temperature of 230 °C. We treated F plasma on the surface of an SiO2 buffer layer before depositing the IGZO semiconductor by reactive sputtering. The field-effect mobility increases from 3.8 to 9.0 cm2 V−1·s−1, and the threshold voltage shift (ΔVth) under positive-bias temperature stress decreases from 3.2 to 0.2 V by F-plasma exposure. High-resolution transmission electron microscopy and atom probe tomography analysis reveal that indium fluoride (In-F) nanoparticles are formed at the IGZO/buffer layer interface. This increases the density of the IGZO and improves the TFT performance as well as its bias stability. The results can be applied to the manufacturing of low-temperature coplanar oxide TFTs for oxide electronics, including information displays.

scholarly journals Effects of polyimide curing on image sticking behaviors of flexible displays

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Hyojung Kim ◽  
Jongwoo Park ◽  
Sora Bak ◽  
Jungmin Park ◽  
Changwoo Byun ◽  
...  
Keyword(s):  
Coefficient Of Thermal Expansion ◽  
Curing Temperature ◽  
Indium Gallium Zinc Oxide ◽  
Threshold Voltage Shift ◽  
Flexible Displays ◽  
Metal Insulator Metal ◽  
Display Technology ◽  
Bias Temperature Stress ◽  
Materials Used ◽  
Charging Effect

AbstractFlexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is especially suitable for flexible displays for its high glass transition temperature and low coefficient of thermal expansion. PI cured under various temperatures (260 °C, 360 °C, and 460 °C) was implemented in metal–insulator–metal (MIM) capacitors, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFT), and actual display panels to analyze device stability and panel product characteristics. Through electrical analysis of the MIM capacitor, it was confirmed that the charging effect in the PI substrates intensified as the PI curing temperature increased. The threshold voltage shift (ΔVth) of the samples was found to increase with rising curing temperature under negative bias temperature stress (NBTS) due to the charging effect. Our analyses also show that increasing ΔVth exacerbates the image sticking phenomenon observed in display panels. These findings ultimately present a direct correlation between the curing temperature of polyimide substrates and the panel image sticking phenomenon, which could provide an insight into the improvement of future PI-substrate-based displays.

A Comparison of Tem and Apfim to the Interpretation of Modulated Microstructures

1985 ◽  
Vol 43 ◽  
pp. 70-71
Author(s):  
M.G. Burke ◽  
M.K. Miller
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Superlattice Reflection ◽  
High Volume ◽  
Atom Probe ◽  
Dark Field ◽  
Miscibility Gap ◽  
Second Phase ◽  
Two Phase ◽  
Probe Field

Interpretation of fine-scale microstructures containing high volume fractions of second phase is complex. In particular, microstructures developed through decomposition within low temperature miscibility gaps may be extremely fine. This paper compares the morphological interpretations of such complex microstructures by the high-resolution techniques of TEM and atom probe field-ion microscopy (APFIM).The Fe-25 at% Be alloy selected for this study was aged within the low temperature miscibility gap to form a <100> aligned two-phase microstructure. This triaxially modulated microstructure is composed of an Fe-rich ferrite phase and a B2-ordered Be-enriched phase. The microstructural characterization through conventional bright-field TEM is inadequate because of the many contributions to image contrast. The ordering reaction which accompanies spinodal decomposition in this alloy permits simplification of the image by the use of the centered dark field technique to image just one phase. A CDF image formed with a B2 superlattice reflection is shown in fig. 1. In this CDF micrograph, the the B2-ordered Be-enriched phase appears as bright regions in the darkly-imaging ferrite. By examining the specimen in a [001] orientation, the <100> nature of the modulations is evident.

CHEMISORPTION OF CO AND METHANATION ON Rh SURFACES AT LOW TEMPERATURE AND LOW PRESSURE, AN ATOM-PROBE FIM STUDY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-487-C6-492
Author(s):  
W. Liu ◽  
D. M. Ren ◽  
C. L. Bao ◽  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Atom Probe ◽  
Low Pressure

scholarly journals Correlating nanoscale secondary ion mass spectrometry and atom probe tomography analysis of uranium enrichment in metallic nuclear fuel

The Analyst ◽  
2021 ◽  
Vol 146 (1) ◽  
pp. 69-74
Author(s):  
Elizabeth Kautz ◽  
John Cliff ◽  
Timothy Lach ◽  
Dallas Reilly ◽  
Arun Devaraj
Keyword(s):  
Mass Spectrometry ◽  
Nuclear Fuel ◽  
Atom Probe Tomography ◽  
Secondary Ion Mass Spectrometry ◽  
Atom Probe ◽  
Uranium Enrichment ◽  
Length Scales ◽  
Atom Probe Tomography Analysis ◽  
Secondary Ion ◽  
Tomography Analysis

235U enrichment in a metallic nuclear fuel was measured via NanoSIMS and APT, allowing for a direct comparison of enrichment across length scales and resolutions.

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer
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