scholarly journals Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2488
Author(s):  
Siqi Tang ◽  
Jiang Yan ◽  
Jing Zhang ◽  
Shuhua Wei ◽  
Qingzhu Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Sensor Arrays ◽  
Processing Temperature ◽  
C 30 ◽  
Three Dimensional Integrated Circuit

In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. Compared with other fabrication methods of poly-Si NW sensors, the SIT process exhibits the characteristics of highly uniform poly-Si NW arrays with well-controlled morphology (about 25 nm in width and 35 nm in length). Conventional metal silicide and implantation techniques were introduced to reduce the parasitic resistance of source and drain (SD) and improve the conductivity. Therefore, the obtained sensors exhibit >106 switching ratios and 965 mV/dec subthreshold swing (SS), which exhibits similar results compared with that of SOI Si NW sensors. However, the poly-Si NW FET sensors show the Vth shift as high as about 178 ± 1 mV/pH, which is five times larger than that of the SOI Si NW sensors. The fabricated poly-Si NW sensors with 600 °C/30 s processing temperature and good device performance provide feasibility for future monolithic three-dimensional integrated circuit (3D-IC) applications.

Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

2018 ◽  
Vol 140 (1) ◽  
Author(s):  
Asisa Kumar Panigrahy ◽  
Kuan-Neng Chen
Keyword(s):  
Low Temperature ◽  
Integrated Circuit ◽  
Large Scale ◽  
Three Dimensional ◽  
3D Ic ◽  
Bonding Technology ◽  
Three Dimensional Integrated Circuit ◽  
Low Temperature Bonding ◽  
Cu Bonding

Arguably, the integrated circuit (IC) industry has received robust scientific and technological attention due to the ultra-small and extremely fast transistors since past four decades that consents to Moore's law. The introduction of new interconnect materials as well as innovative architectures has aided for large-scale miniaturization of devices, but their contributions were limited. Thus, the focus has shifted toward the development of new integration approaches that reduce the interconnect delays which has been achieved successfully by three-dimensional integrated circuit (3D IC). At this juncture, semiconductor industries utilize Cu–Cu bonding as a key technique for 3D IC integration. This review paper focuses on the key role of low temperature Cu–Cu bonding, renaissance of the low temperature bonding, and current research trends to achieve low temperature Cu–Cu bonding for 3D IC and heterogeneous integration applications.

scholarly journals Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
High Speed ◽  
High Performance ◽  
Near Field ◽  
Three Dimensional ◽  
3D Ic ◽  
Three Dimensional Integrated Circuit ◽  
The Impact

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.

Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs)

2019 ◽  
Vol 33 (12) ◽  
pp. 35-39
Author(s):  
Woo Shik Jung ◽  
Jin Hong Park ◽  
Duygu Kuzum ◽  
Wanki Kim ◽  
Simon Wong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Current Analysis ◽  
3D Ics ◽  
Three Dimensional Integrated Circuit

scholarly journals Thermal management of three-dimensional integrated circuits with special structures

2021 ◽  
pp. 109-109
Author(s):  
Kang-Jia Wang ◽  
Cui-Ling Li
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Heat Source ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Numerical Approach ◽  
Optimal Structure ◽  
Maximum Temperature ◽  
Three Dimensional Integrated Circuit

Different stacked structures affect greatly the temperature distribution of a three-dimensional integrated circuit(3-D IC), and an optimal structure is much needed to reduce the maximal temperature. This paper suggests a numerical approach to such structures with different heat source distributions. The results show that an optimal stacked structure can reduce the maximum temperature by 8.7?C.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

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