scholarly journals Thermal management of three-dimensional integrated circuits with special structures

2021 ◽  
pp. 109-109
Author(s):  
Kang-Jia Wang ◽  
Cui-Ling Li
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Heat Source ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Numerical Approach ◽  
Optimal Structure ◽  
Maximum Temperature ◽  
Three Dimensional Integrated Circuit

Different stacked structures affect greatly the temperature distribution of a three-dimensional integrated circuit(3-D IC), and an optimal structure is much needed to reduce the maximal temperature. This paper suggests a numerical approach to such structures with different heat source distributions. The results show that an optimal stacked structure can reduce the maximum temperature by 8.7?C.

scholarly journals Evaluation of the Potential Electromagnetic Interference in Vertically Stacked 3D Integrated Circuits

2020 ◽  
Vol 10 (3) ◽  
pp. 748
Author(s):  
Dipesh Kapoor ◽  
Cher Ming Tan ◽  
Vivek Sangwan
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electromagnetic Interference ◽  
High Speed ◽  
High Performance ◽  
Near Field ◽  
Three Dimensional ◽  
3D Ic ◽  
Three Dimensional Integrated Circuit ◽  
The Impact

Advancements in the functionalities and operating frequencies of integrated circuits (IC) have led to the necessity of measuring their electromagnetic Interference (EMI). Three-dimensional integrated circuit (3D-IC) represents the current advancements for multi-functionalities, high speed, high performance, and low-power IC technology. While the thermal challenges of 3D-IC have been studied extensively, the influence of EMI among the stacked dies has not been investigated. With the decreasing spacing between the stacked dies, this EMI can become more severe. This work demonstrates the potential of EMI within a 3D-IC numerically, and determines the minimum distance between stack dies to reduce the impact of EMI from one another before they are fabricated. The limitations of using near field measurement for the EMI study in stacked dies 3D-IC are also illustrated.

scholarly journals Integrated microchannel cooling in a three dimensional integrated circuit: A thermal management

2016 ◽  
Vol 20 (3) ◽  
pp. 899-902
Author(s):  
Kang-Jia Wang ◽  
Zhong-Liang Pan
Keyword(s):  
Thermal Management ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Design Guidelines ◽  
Thermal Design ◽  
Steady State Temperature ◽  
Detailed Evaluation ◽  
Microchannel Cooling ◽  
Three Dimensional Integrated Circuit ◽  
The Relationship

Microchannel cooling is a promising technology for solving the three-dimensional integrated circuit thermal problems. However, the relationship between the microchannel cooling parameters and thermal behavior of the three dimensional integrated circuit is complex and difficult to understand. In this paper, we perform a detailed evaluation of the influence of the microchannel structure and the parameters of the cooling liquid on steady-state temperature profiles. The results presented in this paper are expected to aid in the development of thermal design guidelines for three dimensional integrated circuit with microchannel cooling.

scholarly journals Thermal optimization of a 3-D integrated circuit

2020 ◽  
Vol 24 (4) ◽  
pp. 2615-2620
Author(s):  
Kang-Jia Wang ◽  
Chu-Xia Hua ◽  
Yan-Hong Liang
Keyword(s):  
Temperature Distribution ◽  
Optimal Design ◽  
Heat Source ◽  
Integrated Circuit ◽  
Numerical Approach ◽  
Source Distribution ◽  
Thermal Optimization ◽  
Optimal Heat ◽  
Heat Source Distribution

In a 3-D integrated circuit the heat source distribution has a huge effect on the temperature distribution, so an optimal heat source distribution is needed. This paper gives a numerical approach to its thermal optimization, the result can be used for 3-D integrated circuit optimal design.

scholarly journals Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2488
Author(s):  
Siqi Tang ◽  
Jiang Yan ◽  
Jing Zhang ◽  
Shuhua Wei ◽  
Qingzhu Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Sensor Arrays ◽  
Processing Temperature ◽  
C 30 ◽  
Three Dimensional Integrated Circuit

In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. Compared with other fabrication methods of poly-Si NW sensors, the SIT process exhibits the characteristics of highly uniform poly-Si NW arrays with well-controlled morphology (about 25 nm in width and 35 nm in length). Conventional metal silicide and implantation techniques were introduced to reduce the parasitic resistance of source and drain (SD) and improve the conductivity. Therefore, the obtained sensors exhibit >106 switching ratios and 965 mV/dec subthreshold swing (SS), which exhibits similar results compared with that of SOI Si NW sensors. However, the poly-Si NW FET sensors show the Vth shift as high as about 178 ± 1 mV/pH, which is five times larger than that of the SOI Si NW sensors. The fabricated poly-Si NW sensors with 600 °C/30 s processing temperature and good device performance provide feasibility for future monolithic three-dimensional integrated circuit (3D-IC) applications.

Benchmarking Study on the Thermal Management Landscape for Three-Dimensional Integrated Circuits: From Back-Side to Volumetric Heat Removal

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
High Performance ◽  
Heat Dissipation ◽  
Hybrid Approach ◽  
Three Dimensional ◽  
Heat Removal ◽  
Back Side

An overview of the thermal management landscape with focus on heat dissipation from three-dimensional (3D) chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side, and finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely: (1) dual-side cooling, implemented by a thermally active interposer, (2) interlayer cooling with four-port fluid delivery and drainage at 100 kPa pressure drop, and (3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low through-silicon-via (TSV) heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active integrated circuit (IC) area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29 kW/cm3, respectively.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

Thermal Characterization of Interlayer Microfluidic Cooling of Three-Dimensional Integrated Circuits With Nonuniform Heat Flux

2010 ◽  
Vol 132 (4) ◽  
Author(s):  
Yoon Jo Kim ◽  
Yogendra K. Joshi ◽  
Andrei G. Fedorov ◽  
Young-Joon Lee ◽  
Sung-Kyu Lim
Keyword(s):  
Integrated Circuits ◽  
Mass Flow Rate ◽  
Thermal Management ◽  
Mass Flow ◽  
Flow Rate ◽  
Single Phase ◽  
Hot Spot ◽  
Three Dimensional ◽  
Two Phase ◽  
Two Phase Cooling

It is now widely recognized that the three-dimensional (3D) system integration is a key enabling technology to achieve the performance needs of future microprocessor integrated circuits (ICs). To provide modular thermal management in 3D-stacked ICs, the interlayer microfluidic cooling scheme is adopted and analyzed in this study focusing on a single cooling layer performance. The effects of cooling mode (single-phase versus phase-change) and stack/layer geometry on thermal management performance are quantitatively analyzed, and implications on the through-silicon-via scaling and electrical interconnect congestion are discussed. Also, the thermal and hydraulic performance of several two-phase refrigerants is discussed in comparison with single-phase cooling. The results show that the large internal pressure and the pumping pressure drop are significant limiting factors, along with significant mass flow rate maldistribution due to the presence of hot-spots. Nevertheless, two-phase cooling using R123 and R245ca refrigerants yields superior performance to single-phase cooling for the hot-spot fluxes approaching ∼300 W/cm2. In general, a hybrid cooling scheme with a dedicated approach to the hot-spot thermal management should greatly improve the two-phase cooling system performance and reliability by enabling a cooling-load-matched thermal design and by suppressing the mass flow rate maldistribution within the cooling layer.

A Simplified Numerical Approach for Finding the Temperature Distribution in Submerged arc Welding Process

2012 ◽  
Vol 622-623 ◽  
pp. 315-318
Author(s):  
Aparesh Datta ◽  
Subodh Debbarma ◽  
Subhash Chandra Saha
Keyword(s):  
Temperature Distribution ◽  
Heat Source ◽  
Arc Welding ◽  
Welding Process ◽  
Numerical Approach ◽  
High Heat ◽  
Submerged Arc Welding ◽  
Fusion Welding ◽  
Arc Welding Process ◽  
Submerged Arc

The quality of joining has assumed a greater role in fabrication of metal in recent years, because of the development of new alloys with tremendously increased strength and toughness. Submerged arc welding is a high heat input fusion welding process in which weld is produced by moving localized heat source along the joint. The weld quality in turn affected by thermal cycle that the weldment experiences during the welding. In the present study a simple comprehensive mathematical model has been developed using a moving heat source and analyzing the temperature on one section and then the temperature distribution of other section are correlated with time delay with reference analyzed section.

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