scholarly journals Recycling of Silicon Carbide Sludge on The Preparation and Characterization of Lightweight Foamed Geopolymer Materials

Polymers ◽  
2021 ◽  
Vol 13 (22) ◽  
pp. 4029
Author(s):  
Kang-Wei Lo ◽  
Ya-Wen Lin ◽  
Ta-Wui Cheng ◽  
Kae-Long Lin ◽  
Wei-Ting Lin

This study used silicon carbide sludge (SCS) to prepare lightweight foaming geopolymer materials (FGPs) by the direct foaming method. Results showed that when the SCS replacement level was 10%, the bulk density of the lightweight FGPs with added foaming agent amounts of 0.5% and 2.0% was 0.59 and 0.49 g/cm3, respectively; at a curing time of 28 days, the lightweight FGPs with amounts of added foaming agent of 0.5% and 2.0% had bulk densities that were 0.65 and 0.58 g/cm3, respectively. When the SCS replacement level was 10%, and the amount of added foaming agent was 2.0%, the porosity ratio of the lightweight FGP increased from 31.88% to 40.03%. The mechanical strength of the lightweight FGPs with SCS replacement levels of 10% and 20% was 0.88 and 0.31 MPa, respectively. Additionally, when the amount of foaming agent increased to 2.0%, the thermal conductivity of the lightweight FGPs with SCS replacement levels of 10% and 20% were 0.370 and 0.456 W/m×K, respectively. When the curing time was 1 day, and the amount of added foaming agent was 0.5%, the reverse-side temperature of the lightweight FGPs with SCS replacement levels of 10% and 20% were 286 and 311 °C, respectively. The k value of the O2 reaction decreased from 2.94 × 10−4 to 1.76 × 10−4 because the reaction system was affected by the presence of SiC sludge, which was caused the reaction to consume O2 to form CO2. The results have been proposed to explain that the manufactured lightweight FGPs had a low thermal conductivity (0.370−0.456 W/m×K). Therefore, recycling of silicon carbide sludge in lightweight foaming geopolymer materials has potential as fire resistance material for the construction industry.

Author(s):  
R. J. Lauf

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.


Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.


2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].


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