scholarly journals Avalanche Photodetector Based on InAs/InSb Superlattice

2020 ◽  
Vol 2 (4) ◽  
pp. 591-599
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Lakshay Gautam ◽  
Manijeh Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Bias Voltage ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Avalanche Photodiode ◽  
Applied Bias ◽  
Gasb Substrate ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Device Responsivity

This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate. The device exhibits a 100 % cut-off wavelength of 4.6 µm at 150 K and 4.30 µm at 77 K. At 150 and 77 K, the device responsivity reaches peak values of 2.49 and 2.32 A/W at 3.75 µm under −1.0 V applied bias, respectively. The device reveals an electron dominated avalanching mechanism with a gain value of 6 at 150 K and 7.4 at 77 K which was observed under −6.5 V bias voltage. The gain value was measured at different temperatures and different diode sizes. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device.

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

2021 ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Bulk Material ◽  
Avalanche Photodiode ◽  
Applied Bias ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio ◽  
Peak Value

Abstract This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

scholarly journals Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Avalanche Photodiode ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio

AbstractIn this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

scholarly journals Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 148
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Short Wavelength ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Low Noise ◽  
Excess Noise ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Strained Layer Superlattice ◽  
Ionization Coefficients

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.

Sign in / Sign up

Export Citation Format

Share Document