scholarly journals Selective Detection of Nitrogen-Containing Compound Gases

Sensors ◽  
2019 ◽  
Vol 19 (16) ◽  
pp. 3565 ◽  
Author(s):  
Ran Yoo ◽  
Hyun-Sook Lee ◽  
Wonkyung Kim ◽  
Yunji Park ◽  
Aran Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Nitrogen Monoxide ◽  
Nitric Oxides ◽  
Doped Graphene ◽  
Semiconducting Metal Oxides ◽  
High Concentrations ◽  
P Type ◽  
Wo3 Thin Films ◽  
Semiconducting Behavior ◽  
Selective Pattern

N-containing gaseous compounds, such as trimethylamine (TMA), triethylamine (TEA), ammonia (NH3), nitrogen monoxide (NO), and nitrogen dioxide (NO2) exude irritating odors and are harmful to the human respiratory system at high concentrations. In this study, we investigated the sensing responses of five sensor materials—Al-doped ZnO (AZO) nanoparticles (NPs), Pt-loaded AZO NPs, a Pt-loaded WO3 (Pt-WO3) thin film, an Au-loaded WO3 (Au-WO3) thin film, and N-doped graphene—to the five aforementioned gases at a concentration of 10 parts per million (ppm). The ZnO- and WO3-based materials exhibited n-type semiconducting behavior, and their responses to tertiary amines were significantly higher than those of nitric oxides. The N-doped graphene exhibited p-type semiconducting behavior and responded only to nitric oxides. The Au- and Pt-WO3 thin films exhibited extremely high responses of approximately 100,000 for 10 ppm of triethylamine (TEA) and approximately −2700 for 10 ppm of NO2, respectively. These sensing responses are superior to those of previously reported sensors based on semiconducting metal oxides. On the basis of the sensing response results, we drew radar plots, which indicated that selective pattern recognition could be achieved by using the five sensing materials together. Thus, we demonstrated the possibility to distinguish each type of gas by applying the patterns to recognition techniques.

Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

2018 ◽  
Vol 44 (14) ◽  
pp. 17283-17289 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Sang-Hun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Sensing Properties ◽  
P Type ◽  
Semiconducting Behavior

Thermoelectric Power of Bi And Bi1−xSbx Alloy Thin Films And Superlattices Grown by MBE

1997 ◽  
Vol 478 ◽  
Author(s):  
Sunglae Cho ◽  
Antonio DiVenere ◽  
George K. Wong ◽  
John B. Ketterson ◽  
Jerry R. Meyer ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Thermoelectric Power ◽  
Bulk Single Crystal ◽  
P Type ◽  
Semiconducting Behavior ◽  
Good Agreement

AbstractWe have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1−xSbx alloy thin films and superlattices as a function of temperature in the range 20–300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. For x=0.072 and 0.088 in Bi1−xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1−xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Tannin-based thin-film composite membranes integrated with nitrogen-doped graphene quantum dots for butanol dehydration through pervaporation

2021 ◽  
Vol 623 ◽  
pp. 119077
Author(s):  
Rumwald Leo G. Lecaros ◽  
Reincess E. Valbuena ◽  
Lemmuel L. Tayo ◽  
Wei-Song Hung ◽  
Chien-Chieh Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Composite Membranes ◽  
Film Composite ◽  
Nitrogen Doped ◽  
Thin Film Composite ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

scholarly journals A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  
Keyword(s):  
Thin Film ◽  
Evolutionary Algorithm ◽  
Design Stage ◽  
Model Parameters ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Multi Objective ◽  
Application Fields ◽  
Channel Lengths ◽  
P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Anode Buffer Layer ◽  
P Type ◽  
Type Nickel ◽  
Nickel Oxide Thin Film

scholarly journals p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita
Keyword(s):  
Thin Film ◽  
Arc Discharge ◽  
Thin Film Transistor ◽  
Chamber Pressure ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Lower Chamber ◽  
Hall Effect Measurements ◽  
Particle Process ◽  
P Type

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

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