A structural analysis of the Pd/GaN ohmic contact annealing behavior

2002 ◽  
Vol 743 ◽  
Author(s):  
C. C. Kim ◽  
P. Ruterana ◽  
J. H. Je
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Electron Beam Evaporation ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Annealing Behavior ◽  
X Ray ◽  
Transmission Electron ◽  
The Relationship

AbstractFor ohmic contact on p GaN, palladium is one of the best candidates showing ohmic characteristics already without annealing. To be realized in devices, it is necessary to know the behavior of the ohmic contacts at accelerated conditions, especially for high temperatures and power. We report on the structural evolution of palladium layers (30 nm) deposited on GaN (0001) by electron beam evaporation without intentional annealing. They were next cut into various pieces which were individually submitted to rapid thermal annealing at 400, 500, 600, 700 and 800°C for 10 sec. We investigate the differences in the microstructure and the location of interfacial phases and their relationships as determined by X-ray diffraction and transmission electron microscopy, we then suggest the formation mechanism based on the relationship. It is shown that the interface is disrupted at annealing above 600°C and by 800°C only very small patches of Pd are still present, however they area completely imbedded in a matrix of intermetallic phases (gallides) formed by the reaction with GaN.

scholarly journals Structural Evolution in Wet Mechanically Alloyed Co-Fe-(Ta,W)-B Alloys

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 800
Author(s):  
Vladimír Girman ◽  
Maksym Lisnichuk ◽  
Daria Yudina ◽  
Miloš Matvija ◽  
Pavol Sovák ◽  
...  
Keyword(s):  
Structural Changes ◽  
Magnetic Measurements ◽  
Structural Evolution ◽  
High Energy ◽  
Control Agent ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
X Ray ◽  
Transmission Electron ◽  
X Ray Absorption

In the present study, the effect of wet mechanical alloying (MA) on the glass-forming ability (GFA) of Co43Fe20X5.5B31.5 (X = Ta, W) alloys was studied. The structural evolution during MA was investigated using high-energy X-ray diffraction, X-ray absorption spectroscopy, high-resolution transmission electron microscopy and magnetic measurements. Pair distribution function and extended X-ray absorption fine structure spectroscopy were used to characterize local atomic structure at various stages of MA. Besides structural changes, the magnetic properties of both compositions were investigated employing a vibrating sample magnetometer and thermomagnetic measurements. It was shown that using hexane as a process control agent during wet MA resulted in the formation of fully amorphous Co-Fe-Ta-B powder material at a shorter milling time (100 h) as compared to dry MA. It has also been shown that substituting Ta with W effectively suppresses GFA. After 100 h of MA of Co-Fe-W-B mixture, a nanocomposite material consisting of amorphous and nanocrystalline bcc-W phase was synthesized.

Effect of Aging Treatment on Damping Capacity in Mncunife Alloy

2012 ◽  
Vol 246-247 ◽  
pp. 1158-1162
Author(s):  
Xu Fu ◽  
Ning Li ◽  
Yu Hua Wen ◽  
Jing Teng ◽  
Ying Zhang
Keyword(s):  
Electron Microscope ◽  
Aging Treatment ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
The Relationship

M2052 alloys with various aging treatments are obtained in order to investigate the relationship between aging treatment and damping capacity by the torsion pendulum, X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) methods. The results show that M2052 can obtain high damping capacity (δ>0.2) when aged at a range from 400°C to 450°C, and the damping capacity after aged at a lower temperature is higher than that aged at a higher temperature for the maximum values. TEM and XRD results show that fcc-fct transformation occurs after aging treatment. The volumes of fct structures are one of reason to affect the damping capacity in M2052 alloy. The better understanding aging treatment could promote the applications of M2052 alloy.

SOLID STATE AMORPHIZATION IN MECHANICALLY ALLOYED Al–Ti–Si NANOCOMPOSITES

2005 ◽  
Vol 04 (05n06) ◽  
pp. 1025-1028
Author(s):  
I. MANNA ◽  
P. NANDI ◽  
B. BANDYOPADHYAY ◽  
P. M. G. NAMBISSAN ◽  
K. GHOSHRAY ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Amorphous Solid ◽  
Positron Annihilation Spectroscopy ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization

The microstructural evolution at different stages of milling of a ternary powder blend of Al 50 Ti 40 Si 10 composition was monitored by X-ray diffraction, high-resolution transmission electron microscopy, positron annihilation spectroscopy and 27 Al nuclear magnetic resonance. Ball-milling leads to alloying, nanocrystallization and partial solid state amorphization, either followed or accompanied by strain-induced nucleation of nanocrystalline intermetallic phases from an amorphous solid solution.

500℃ high-temperature reliability of Ni/Nb Ohmic contact on n-type 4H-SiC

2021 ◽  
Author(s):  
Vuong Van Cuong ◽  
Tadashi Sato ◽  
Takamichi Miyazaki ◽  
Tetsuya Meguro ◽  
Seiji Ishikawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contact ◽  
Chemical Compounds ◽  
Etching Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Current Voltage ◽  
The Stability

Abstract The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500℃ was investigated. The current-voltage characteristics showed that, while the Ni(50)/Nb(50)/4H-SiC sample without applying the CF4:O2 etching process degraded just after 25-hour and lost ohmic behavior after 50-hour aging, the Ni(75)/Nb(25)/4H-SiC contact undergone CF4:O2 surface treatment still showed excellent stability after aging for 100 hours at 500℃. Though X-ray diffraction results indicated that the chemical compounds remained stable during the aging process, transmission electron microscopy showed that there was a redistribution of the chemical compounds at the interface of the contact after 500℃ aging. The depth distribution of the elements and energy dispersive X-ray analyses revealed that the contribution of carbon agglomeration at the interface accounted for the degradation of the sample without applying the etching process. Whereas the well-controlled excess carbon atoms of the contact undergone CF4:O2 treatment ensured the stability of this contact when operating at high-temperature ambient.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

On the Structural Evolution of the Amorphous Al75Cu15V10 Alloy to the Icosahedral Phase

1988 ◽  
Vol 43 (5) ◽  
pp. 505-506 ◽  
Author(s):  
E. Matsubara ◽  
Y. Waseda ◽  
A. P. Tsai ◽  
A. Inoue ◽  
T. Masumoto
Keyword(s):  
Electron Microscopy ◽  
Structural Evolution ◽  
Icosahedral Phase ◽  
X Ray Diffraction ◽  
Bright Field ◽  
Continuous Growth ◽  
X Ray ◽  
Transmission Electron ◽  
Icosahedral Clusters ◽  
Peak Widths

The transformations occurring on annealing an as-spun amorphous Al75Cu15V10 alloy are studied by X-ray diffraction and transmission electron microscopy (TEM). A continuous growth of icosahedral clusters, which are present already in the as-spun sample, is revealed. The size of the clusters estimated from the diffuse X-ray peak widths is consistent with the size of the modulation observed in the bright field TEM images.

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 733-736 ◽  
Author(s):  
Sergio Ferrero ◽  
A. Albonico ◽  
Umberto M. Meotto ◽  
G. Rambolà ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ohmic Behavior ◽  
Semiconductor Interfaces

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

A microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

1996 ◽  
Vol 427 ◽  
Author(s):  
J. S. Kwak ◽  
H. K. Baik ◽  
H. Kim ◽  
J. -L. Lee ◽  
D. W. Shin ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Gaas Substrate ◽  
Isothermal Annealing ◽  
Interfacial Microstructure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Electrical Investigation ◽  
Transmission Electron ◽  
Elemental Diffusion

AbstractInterfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction(XRD), Auger electron spectroscopy(AES), and cross-sectional transmission electron microscopy(XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380°C. The contact is thermally stable even after isothermal annealing for 5h at 400°C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.

Behavior of Zinc During Formation of Au(Zn) Ohmic Contacts to P-Type GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
E. Mizera ◽  
R. Zarecka ◽  
J. Adamczewska ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Native Oxide ◽  
Significant Feature ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
Contact Metallization ◽  
Transmission Electron ◽  
P Type

ABSTRACTThe reactions between (100) GaAs and Au, Zn, and Au(Zn) ohmic contact metallization have been investigated by the use of transmission electron microscopy and x-ray diffraction. Emphasis is placed on the particular role of Zn during consecutive stages of the formation of an ohmic contact to p-GaAs. The most significant feature of the interaction of Zn with GaAs is the penetration of Zn atoms into the native oxide, which remains at the surface of GaAs after chemical treatment. Moreover, the presence of Zn in Au-based metallization is found to considerably suppress the thermally induced growth of metallization grains, making the microstructure of the contact virtually intact upon annealing at temperatures up to 460°C.

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