Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

2021 ◽  
Author(s):  
Yuto Ando ◽  
Manato Deki ◽  
Hirotaka Watanabe ◽  
Noriyuki Taoka ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
Formation Process ◽  
Interface Properties ◽  
Gate Electrode ◽  
Channel Mobility

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 987-990 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Breakdown Strength ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface Properties ◽  
Gate Oxides ◽  
Channel Mobility ◽  
Oxide Deposition ◽  
Mos Structures

Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oC significantly enhances the breakdown strength and decreases the interface state density to 3x1011 cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has been attained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively. The channel mobility shows a maximum when the increase of oxide thickness during N2O annealing is approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed process has blocked 1450 V and showed a low on-resistance of 75 mcm2, which is one of the best performances among lateral SiC MOSFETs reported.

Interface Properties and Channel Mobility of Plasma Nitrided Devices

ESSDERC ’89 ◽  
1989 ◽  
pp. 366-369 ◽  
Author(s):  
B. Piot ◽  
A. Straboni ◽  
B. Vuillermoz ◽  
K. Barla ◽  
M. Berenguer ◽  
...  
Keyword(s):  
Interface Properties ◽  
Channel Mobility

SiO2/SiC Interface Properties on Various Surface Orientations

2002 ◽  
Vol 742 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Conduction Band ◽  
Room Temperature ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
Channel Mobility

ABSTRACTThe interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

2004 ◽  
Vol 815 ◽  
Author(s):  
T. Kimoto ◽  
Y. Kanzaki ◽  
M. Noborio ◽  
H. Kawano ◽  
H. Matsunami
Keyword(s):  
Doping Concentration ◽  
Interface State ◽  
Interface Structure ◽  
State Density ◽  
Interface State Density ◽  
Interface Properties ◽  
Crystal Face ◽  
Channel Mobility ◽  
Pile Up ◽  
Effective Channel

Abstract4H-SiC(0001), (000-1), and (11-20) have been directly oxidized by N2O at 1300°C, and the MOS interfaces have been characterized. The interface state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O2 oxidation at 1150°C. Planar n-channel MOSFETs fabricated on lightly-doped 4H-SiC(0001), (000-1) and (11-20) faces have shown an effective channel mobility of 26, 43, and 78 cm2/Vs, respectively. The mobility decreased with increasing the doping concentration of p-body. SIMS analyses have revealed a clear pile-up of nitrogen atoms near the MOS interface. The thickness of interfacial SiCxOy layer can be decreased by utilizing N2O oxidation. The crystal face dependence of interface structure is discussed.

scholarly journals Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

2017 ◽  
Vol 51 (12) ◽  
pp. 1706
Author(s):  
Yue-Gie Liaw ◽  
Wen-Shiang Liao ◽  
Mu-Chun Wang ◽  
Chii-Wen Chen ◽  
Deshi Li ◽  
...  
Keyword(s):  
Series Resistance ◽  
Channel Length ◽  
Interface States ◽  
Performance Characteristics ◽  
Subthreshold Swing ◽  
Device Performance ◽  
Gate Electrode ◽  
Drive Current ◽  
Channel Mobility

The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDE pFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (Gm) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. DOI: 10.21883/FTP.2017.12.45190.8421

Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

2013 ◽  
Vol 50 (4) ◽  
pp. 281-284
Author(s):  
K. Tuokedaerhan ◽  
R. Tan ◽  
K. Kakushima ◽  
P. Ahmet ◽  
Y. Kataoka ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Interface Properties ◽  
Gate Electrode ◽  
Mos Capacitors

4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 805-808
Author(s):  
Mitsuo Okamoto ◽  
Seiji Suzuki ◽  
Makoto Kato ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda
Keyword(s):  
Breakdown Voltage ◽  
Gate Electrode ◽  
Channel Mobility ◽  
Electrode Edge

We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel mobility of a lateral test MOSFET on a C-face was 41 cm2/Vs, which was much higher than 5 cm2/Vs for that on a Si-face. The specific on-resistance of the lateral RESURF MOSFET on a C-face was improved to 79 mΩcm2 as comparison with 2400 mΩcm2 for Si-face. The breakdown voltage was 490V for Si-face and 460V for C-face, which was 82% and 79% of the designed breakdown voltage of 600V, respectively. The device breakdown occurred destructively at the gate electrode edge.

Formation process of periodic non-conservative antiphase boundary structure in L-Pd5Ce

1990 ◽  
Vol 48 (4) ◽  
pp. 162-163
Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano ◽  
Kensuke Oki
Keyword(s):  
Formation Process ◽  
Domain Size ◽  
Antiphase Boundary ◽  
Boundary Structure ◽  
Temperature Phase ◽  
Arc Melting ◽  
Iced Water ◽  
Antiphase Domains ◽  
Low Temperature Phase ◽  
Degree Of Order

The low temperature phase of Pd5Ce (L-Pd5Ce) has a one-dimensional long period superstructure (1D-LPS) derived from Ll2. The periodic antiphase boundaries (APBs) are parallel to (110) planes and have a shift vector of 1/2[110]. Hereafter, the indices are referred to the basic lattices of Ll2 As insertion of the APB causes a change in composition, such an APB is called “non-conservative”. Then, a domain size M depends upon the Ce concentration in the alloy. It was found that M increases also with temperature. The temperature dependency of M is attributed to a change of the degree of order within the antiphase domains. In this work, morphology of the non-conservative APBs is observed to clarify the formation process of the 1D-LPS.The alloy of Pd-16.7 at%Ce was prepared by arc melting in argon atmosphere. Disc specimens made from the alloy ingot were first held at 985 K for 260 ks and quenched in iced water to obtain the state of M=∞ or Ll2, followed by annealing for various lengths of time. The annealing temperature was 873 K where the equilibrium value for M is about 3 in unit of (110) lattice spacing of Ll2. Observation was carried out using microscopes JEM-2000FX, JEM-4000EX (HVEM Lab., Kyushu Univ.) and JEM-2000EX (Dept. of Mater. Sci. Tech., Kyushu Univ.).

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