The Design and Modeling of 2.4 GHz and 3.5 GHz MMIC LNA

2012 ◽  
pp. 157-184
Author(s):  
Ching Wen Yip
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Design System ◽  
Operating Voltage ◽  
Total Current ◽  
Current Consumption ◽  
Amplifier Gain ◽  
Advance Design System ◽  
Feedback Techniques ◽  
Electronic Amplifier

LNA is an electronic amplifier that is required in receiver systems to increase the amplitude of the very low level signals from the antenna without adding too much noise. Software Advance Design System (ADS) was used to simulate the circuit and design the layout. LNA was designed using cascode topology with feedback techniques which produces better matching and unconditionally stable over the entire desired frequencies. For the 2.4 GHz operation, the amplifier achieves gain of 14.949 dB, noise figure of 1.951 dB and input reflection coefficient of -10.419 dB. With operating voltage supply at 3V, the total current consumption is 13 mA. For 3.5GHz amplifier, gain is 22.985 dB, noise figure is 1.964dB, input reflection coefficient is -12.427 dB and current consumption is 18 mA.

scholarly journals Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 40-47
Author(s):  
Bijaya Shrestha
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Current Consumption ◽  
Additional Noise ◽  
Noise Amplifier ◽  
Rf Signal ◽  
Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.

Pump Laser Automatic Signal Control for Erbium-Doped Fiber Amplifier Gain, Noise Figure, and Output Spectral Power

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
I. S. Amiri ◽  
Ahmed Nabih Zaki Rashed ◽  
P. Yupapin
Keyword(s):  
Noise Figure ◽  
Spectral Power ◽  
Power Level ◽  
Fiber Amplifier ◽  
Pump Laser ◽  
Output Power Level ◽  
Signal Control ◽  
Erbium Doped Fiber Amplifier ◽  
Erbium Doped ◽  
Amplifier Gain

AbstractThis paper has simulated the pump laser automatic signal control for erbium-doped fiber amplifier gain, noise figure, and output spectral power. Signal gain and noise figure are deeply studied in relation to laser pump power variations at operating pumping wavelengths of 980 nm and 1,480 nm for previous and proposed models. Similar to the study of the light signal to noise ratio, output power level and maximum Q factor are also simulated versus EDFA amplifier length at pumping power of 500 mW and different pumping wavelength by using the proposed model. The obtained results are better by using a pumping wavelength of 1,480 nm than a pumping wavelength of 980 nm. The optimum EDFA amplifier is 5 m, which gives better performance than other amplifier lengths.

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

scholarly journals Microwave Bandpass Filter Integrated with Notch Response for Wide-band Applications

2018 ◽  
Vol 11 (2) ◽  
pp. 797
Author(s):  
Mussa Mabrok ◽  
Zahriladha Zakaria ◽  
Nurhana Abu Hussin ◽  
Mohamad Ariffin Mutalib
Keyword(s):  
Communication Systems ◽  
Bandpass Filter ◽  
Wide Band ◽  
Design System ◽  
Substrate Thickness ◽  
Notch Band ◽  
Military Applications ◽  
Communication Devices ◽  
Advance Design System ◽  
Better Than

This paper presents the design of wide-band bandpass filter using microstrip structure at 3-6GHz with fractional bandwidth of 66.67% based upon short-circuited stubs structure of 5th degree. In order to avoid the interference from existing system that operates in the frequency band, the folded stepped impedance resonator (SIR) was introduced to generate a narrow notch band at 5.2GHz. Pin diode is employ as switching mechanism for the notch response. This design is simulated by Advance Design System (ADS) software and using Roger Duroid 4350B with a dielectric constant of 3.48, substrate thickness 0.508mm and loss tangent 0.0019.The achieved return loss is better than 15dB and insertion loss is less than 1dB.The designed filter can be used in microwave communication systems such as wireless communication devices and military applications (radar system).

Inductive Feedback Technique for Design of High Gain 0.18μm CMOS LNA for 5G Applications

2021 ◽  
pp. 2150236
Author(s):  
Anjana Jyothi Banu ◽  
G. Kavya ◽  
D. Jahnavi
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Common Source ◽  
Matching Network ◽  
Input Matching ◽  
Cmos Lna ◽  
Noise Amplifier

A 26[Formula: see text]GHz low-noise amplifier (LNA) designed for 5G applications using 0.18[Formula: see text][Formula: see text]m CMOS technology is proposed in this paper. The circuit includes a common-source in the first stage to suppress the noise in the amplifier. The successive stage has a Cascode topology along with an inductive feedback to improve the power gain. The input matching network is designed to achieve the input reflection coefficient less than [Formula: see text]7dB at the intended frequency. The matching network at the output is designed using inductor–capacitor (LC) components connected in parallel to attain the output reflection coefficient of [Formula: see text]10[Formula: see text]dB. Due to the inductor added in feedback at the second stage. The [Formula: see text] obtained is 18.208[Formula: see text]dB at 26[Formula: see text]GHz with a noise figure (NF) of 2.8[Formula: see text]dB. The power supply given to the LNA is 1.8[Formula: see text]V. The simulation and layout of the presented circuit are performed using Cadence Virtuoso software.

Performance Analysis of an EDFA Utilizing a Partially Doped Core Fiber (PDCF)

2016 ◽  
Vol 37 (3) ◽  
Author(s):  
M. A. Ahad ◽  
M.C. Paul ◽  
S.Z. Muhd-Yassin ◽  
A. Mansoor ◽  
H.A. Abdul-Rashid
Keyword(s):  
Doping Concentration ◽  
Noise Figure ◽  
Fiber Amplifiers ◽  
The Core ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Ion Doping ◽  
Amplifier Gain ◽  
Core Fiber ◽  
Erbium Ion

AbstractThe effect of transversal design in Erbium-doped fiber amplifiers’ gain and noise figure performance is illustrated in this work. In this work, we investigate experimentally a single pass 980 nm pumped EDFA with partially doped Erbium core fiber (PDCF), which has the core partially doped with Erbium ions. Later, the enumerated results for PDCF are compared with a standard fully doped EDF, having similar Erbium ion doping concentration. The PDCF Amplifier gain and noise figure performance is studied against different pump power and signal power at different operating wavelengths. The noise figure indicates improvement due to reduced spontaneous emission from un-doped region of the core.

Study on Performance Analysis of CMOS RF front-end circuits for 2.4GHz Wireless Applications

2012 ◽  
pp. 68-73
Author(s):  
M. Sumathi ◽  
S. Malarvizhi
Keyword(s):  
Performance Analysis ◽  
Low Voltage ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Design System ◽  
Wireless Applications ◽  
Front End ◽  
Trade Offs ◽  
Front End Circuits

In this paper, low voltage design concepts and new CMOS front-end circuits for 2.4GHz wireless applications are presented. The performances of these circuits are analysed and compared with other existing structures using TSMC 0.18-μm CMOS technology scale. The design trade-offs between impedance matching, power gain and noise figure of low-noise amplifiers are highlighted. The advantage of the introduced mixer topology is expressed in terms of conversion gain, noise figure and linearity. At a supply voltage of 1.8V, the design and performance analysis have been performed using Agilent’s Advanced Design System (ADS2009) software.

The Special Research on a Low Noise Amplifier

2012 ◽  
Vol 605-607 ◽  
pp. 2057-2061
Author(s):  
Xin Yin ◽  
Yi Yao ◽  
Jin Ling Jia
Keyword(s):  
Wireless Local Area Network ◽  
Local Area Network ◽  
Noise Figure ◽  
Design Method ◽  
Local Area ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Area Network ◽  
Noise Amplifier

This paper studies a low noise amplifier design method for 5.8G wireless local area network. Using the software of designing RF circuit ADS(Advanced Design System) and Avago Technologies’s ATF-36077,we designed a three-cascade LNA. In 5.725G~5.85GHz range, noise figure less than 0.5dB, more than 30dB gain, input and output standing wave ratio less than 1.3dB.The LNA meet the design requirements.

Low Voltage Low Power Up-Conversion Mixer for Wireless Sensor Networks Node Application

2013 ◽  
Vol 760-762 ◽  
pp. 516-520
Author(s):  
Ge Sun ◽  
Zhi Qun Li ◽  
Chen Jian Wu ◽  
Meng Zhang ◽  
Jia Cao ◽  
...  
Keyword(s):  
Wireless Sensor Networks ◽  
Sensor Networks ◽  
Low Power ◽  
Low Voltage ◽  
Noise Figure ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Wireless Sensor ◽  
Operating Voltage ◽  
Conversion Gain

A low voltage, low power up-conversion mixer is presented here for 2.4GHz wireless sensor networks (WSN). It was based on a double-balanced Gilbert cell type. The current-reuse technique was used to reduce the power consumption and negative-resistance compensation technique was used to improve the conversion gain. The mixer was designed in 0.18μm RF CMOS technology, and was simulated with Cadence SpectreRF. The simulation results indicate that the conversion gain is 6.37dB, the noise figure is 15.36dB and the input 1dB compression point is-10.3dBm, while consuming 1mA current for operating voltage at 1V.

scholarly journals Simulation and Design of Low Noise Amplifier

2019 ◽  
Vol 9 (1) ◽  
pp. 2968-2970
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Maximum Gain ◽  
Noise Amplifier ◽  
Electronic Amplifier

A low-noise amplifier is an electronic amplifier that amplifies a very poor signal (in terms of its power) without significantly degrading its SNR. An amplifier increases the power of both the signal and the noise present at its input. A good LNA has a low Noise Figure as well as enough gain to boost the signal thereby does the work required of it. This paper proposes a LNA designed with ATF-21170 to operate in 2.4 GHz with a maximum gain of 18.453 dB and minimum NF 1.346

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