Investigation on Stochastic Resonance in Quantum Dot and its Summing Network

2011 ◽  
pp. 140-148
Author(s):  
Seiya Kasai
Keyword(s):  
Quantum Dot ◽  
Stochastic Resonance ◽  
Circuit Simulation ◽  
Peak Position ◽  
Signal Frequency ◽  
Single Electrons ◽  
Input Signal Frequency ◽  
Resonance Behavior ◽  
Tunneling Transition ◽  
Charging Energy

Stochastic resonance behavior of single electrons in a quantum dot and its summing network is investigated theoretically. Dynamic behavior of the single electron in the system at finite temperature is analyzed using a master equation with a tunneling transition rate. The analytical model indicates that an input-output correlation has a peak as a function of temperature, which confirms the appearance of the stochastic resonance. The peak position and height depend on charging energy, tunnel resistance, and input signal frequency. It is also found that the correlation is enhanced by formation of a summing network integrating quantum dots in parallel. The present model quantitatively explains the stochastic resonance behaviors of the single electrons predicted by a circuit simulation (Oya, Asai, & Amemiya, 2007).

Mechanism of Re-Scaling Frequency Stochastic Resonance Based on Kramers Rate and its Application

2010 ◽  
Author(s):  
Yong-gang Leng ◽  
Yan Guo
Keyword(s):  
Fault Diagnosis ◽  
Stochastic Resonance ◽  
Signal Frequency ◽  
Frequency Range ◽  
Excellent Performance ◽  
System Parameters ◽  
Frequency Scale ◽  
Input Signal Frequency ◽  
Scale Ratio ◽  
Rate Limit

We develop and further explore the mechanism of re-scaling frequency stochastic resonance (RFSR) based on the Kramers rate. We find that when the input signal frequency for stochastic resonance (SR) exceeds the half the Kramers rate limit, a frequency-scale ratio of RFSR should be selected to re-scale the larger signal frequency to a small SR frequency. Within the SR frequency range, we compare the performance of two approaches of realizing SR, the method of adjusting system parameters and the method of frequency-scale ratio. We showed that the former makes the half the Kramers rate approaching the signal frequency, while the latter makes the signal frequency approaching the half the Kramers rate. An engineering example demonstrates excellent performance of the re-scaling frequency for SR in fault diagnosis.

scholarly journals Design of RF Energy Harvesting Circuit for Low Power Devices

2016 ◽  
Vol 4 (1) ◽  
pp. 16-19
Author(s):  
Garima Bajpai ◽  
Umesh Barandiya
Keyword(s):  
Energy Harvesting ◽  
Radio Frequency ◽  
Circuit Simulation ◽  
Electrical Energy ◽  
Alternative Methods ◽  
Signal Frequency ◽  
Rf Energy Harvesting ◽  
Input Signal Frequency ◽  
Energy Harvesting System ◽  
Rf Energy

Radio frequency (RF) energy transfer and harvesting techniques have recently become alternative methods to power the next generation wireless networks. The RF energy harvesting system was designed to convert the RF energy available in the atmosphere into useful electrical energy which can be used to charge a battery of capacity 50 uAh. This battery requires a voltage in the range of 4- 4.2V to get itself charged. In this paper we have designed and simulated a Radio Frequency (RF) energy harvesting circuit which utilized available RF energy with the voltage boosting circuit. Simulation results represents that by using matching network of high-Q, output voltage of harvesting circuit increases and it becomes more sensitive with respect to input signal frequency and value of elements used.

Design of Control System for Hydraulically Vibrated Processing Tomato Fruit Seedling Separation Device

2014 ◽  
Vol 651-653 ◽  
pp. 693-696
Author(s):  
Li Hong Wang ◽  
Rong Qing Liang ◽  
Cheng Song Li ◽  
Za Kan ◽  
Jin Wei Qin
Keyword(s):  
Tomato Fruit ◽  
Simulation Software ◽  
Signal Frequency ◽  
System Control ◽  
Frequency Range ◽  
Hydraulic Simulation ◽  
Separation Device ◽  
Processing Tomato ◽  
Input Signal Frequency ◽  
Set Up

Eccentric style processing tomato fruit seeding separation device exist high machining and assembly precision or other issues. In order to solve this problem, the mode of vibration of hydraulic replaced the eccentric style to drive the fruit seedling separation roller to separate processing tomato effectively. To facilitate adjustment of the hydraulic system, a kind of control circuit PLC as the core was designed according to the actual production requirements. PLC and other elements were selected. The system control signal frequency was initially set up as 1~5 HZ, within the frequency range hydraulic simulation software was used to simulate and analyze the hydraulic vibration system. The result shows that the system rams steady when the input signal frequency range was 1~5HZ.

SELF-TUNING BIQUAD BAND-PASS FILTER

2013 ◽  
Vol 22 (03) ◽  
pp. 1350008 ◽  
Author(s):  
GORAN JOVANOVIĆ ◽  
DARKO MITIĆ ◽  
MILE STOJČEV ◽  
DRAGAN ANTIĆ
Keyword(s):  
Dynamic Range ◽  
Signal Frequency ◽  
Band Pass Filter ◽  
Central Frequency ◽  
Pass Filter ◽  
Input Signal Frequency ◽  
Bicmos Technology ◽  
Self Tuning ◽  
Band Pass ◽  
Constant Bandwidth

One approach to design self-tuning gm-C biquad band-pass filter is considered in this paper. The phase control loop is introduced to force filter central frequency to be equal to input signal frequency what is achieved by adjusting the amplifier transconductance gm. Thanks to that, the filter is robust to parameter perturbations and it can be used as a selective amplifier. In the full tuning range, it has a constant maximum gain at central frequency as well as a constant bandwidth. The 0.25 μm SiGe BiCMOS technology was used during design and verification of the band-pass filter. The filter has 26 dB gain, quality factor Q = 20 and central frequency up to 150 MHz. Simulation results indicate that the total in-band noise is 59 μV rms , the output third intercept point OIP3 = 4.36 dB and the dynamic range is 35 dB. Maximal power consumption at 3 V power supply is 1.115 mW.

scholarly journals Reducing the Impact of the Frequency Change on the Formation of Orthogonal Components of the Relay Protection Input Signals

2020 ◽  
Vol 63 (1) ◽  
pp. 42-54 ◽  
Author(s):  
E. A. Romaniuk ◽  
V. Yu. Rumiantsev ◽  
Yu. V. Rumiantsev ◽  
A. A. Dziaruhina
Keyword(s):  
Fourier Transform ◽  
Discrete Fourier Transform ◽  
Digital Filter ◽  
Input Signal ◽  
Digital Filters ◽  
Signal Frequency ◽  
Filter Model ◽  
Input Signal Frequency ◽  
Orthogonal Components ◽  
The Impact

Digital filters made with the use of discrete Fourier Transform are applied in most microprocessor protections produced both in the home country and abroad. When the input signal frequency deviates from the value to which these filters are configured, a signal is generated at their output with oscillation amplitude that is proportional to the deviation of the signal frequency from the specified one. The article proposes an algorithm for compensating the oscillations of orthogonal components of the output signals of digital filters implemented on the basis of a discrete Fourier transform, when the input signal frequency deviates from the nominal one. A mathematical model of the proposed digital filter with an algorithm for compensating the oscillations of its orthogonal components, as well as a signal model for reproducing input effects, is implemented in the MatLab-Simulink dynamic modeling environment. The digital filter model is provided with two channels, viz. a current channel and a voltage channel, which makes it possible to simulate their operation in relation to protections that use one or two input values, for example, for current and remote protection. Verification of the functioning of the digital filter model with compensation for fluctuations in its output signal was carried out with the use of two types of test effects, viz. a sinusoidal signal with a frequency of 48–51 Hz (idealized effect), and the effects that are close to the real secondary signals of measuring current transformers and voltage transformers in case of short circuits accompanied by a decrease in frequency. The conducted computational experiments with deviation of frequency from the nominal one, revealed the presence of undamped oscillations at the output of standard digital Fourier filters and their almost complete absence in the proposed digital filters. This makes us possible to recommend digital filters based on a discrete Fourier transform supplemented by an algorithm for compensation of fluctuations in the amplitudes of the output signals for the use in microprocessor protection.

Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated with Hydrogen-Plasma

2005 ◽  
Vol 864 ◽  
Author(s):  
H.D. Nam ◽  
J.D. Song ◽  
W.J. Choi ◽  
J.I. Lee ◽  
H.S. Yang
Keyword(s):  
Quantum Dot ◽  
Plasma Treatment ◽  
Gas Flow ◽  
Wide Spectrum ◽  
Hydrogen Plasma ◽  
Electrical Characterization ◽  
Peak Position ◽  
Infrared Photodetector ◽  
Grown Sample ◽  
Quantum Dot Infrared Photodetector

AbstractWe have carried out hydrogen-plasma (H-plasma) treatments on a quantum dot infrared photodetector (QDIP) structure, with a 5-stacked InAs dots in an InGaAs well structure and a Al0.3Ga0.7As/GaAs superlattice barrier. The sample structures were grown by molecular beam epitaxy. The H-plasma treatment has been carried out at 150 °C for 3 min – 40 min with 40 sccm of H2 gas flow rate and 10 W of RF power. After H-plasma treatment, photoluminescence (PL) intensities of the samples were slightly reduced compared to that of as-grown sample, without any changes in their PL peak position. The dark currents of H-plasma treated samples were much smaller by many orders of magnitudes than that for as-grown sample. The sample exposed to Hplasma for 10 min showed the lowest dark current, enabling the observation of photocurrent with a wide spectrum between 3 – 12 μim at 11 K.

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

2007 ◽  
Vol 1055 ◽  
Author(s):  
Brandon Scott Passmore ◽  
Jiang Wu ◽  
Eric A. Decuir ◽  
Omar Manasreh ◽  
Peter M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Peak Position ◽  
Dual Band ◽  
Intersubband Transitions ◽  
Temperature Dependent ◽  
Mid Infrared ◽  
Poisson Equations ◽  
Infrared Spectral ◽  
Consistent Solution

ABSTRACTThe interband and intersubband transitions in self-assembled InAs and In0.3Ga0.7As quantum dots grown by molecular beam epitaxy have been investigated for their use in visible, near-, and mid-infrared detection applications. Devices based on InAs quantum dots embedded in an InxGa1−xAs (0 to 0.3) graded well and In0.3Ga0.7As quantum dots were fabricated in order to measure the temperature dependent (77 – 300 K) photoresponse. The dark current was measured in the temperature range of 77 to 300 K for the devices. Room temperature photoresponse ranging between 0.6 to 1.3 μm was observed for the InAs and In0.3Ga0.7As quantum dot photodetectors. Furthermore, a dual band photoresponse in the visible, near-, and mid-infrared spectral regions for both devices was observed at 77 K. Using a self-consistent solution of Schrödinger-Poisson equations, the peak position energies of the interband and intersubband transitions in the two multi-color quantum dot infrared photodetector structures was calculated.

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