Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery
2012 ◽
Vol 229-231
◽
pp. 2077-2081
Keyword(s):
This work demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Qrr) increased linearly with number of fingers, device width and inductance.
2010 ◽
Vol 168-170
◽
pp. 2293-2298
Keyword(s):
1971 ◽
Vol 45
(4)
◽
pp. 805-829
◽
Keyword(s):
1972 ◽
Vol 52
(1)
◽
pp. 97-112
◽
1977 ◽
Vol 35
◽
pp. 206-209
1991 ◽
Vol 49
◽
pp. 552-553
Keyword(s):
1975 ◽
Vol 33
◽
pp. 292-293
Keyword(s):
1976 ◽
Vol 34
◽
pp. 472-473