A 5GHz Analog Laser Diode Driver for Radio-over-Fiber Transmission Applications

2014 ◽  
Vol 635-637 ◽  
pp. 1063-1066
Author(s):  
Zheng Fei Hu ◽  
Ying Mei Chen ◽  
Min Di Huang

The design of an analog laser diode (LD) driver for 5GHz radio-over-fiber (ROF) transmission systems is presented in this paper. The proposed linear LD driver adopted a single-ended two-stage amplifier structure with the operating voltages of 1.8V and 3.3V respectively. The technique of self-biased cascade amplifier is employed to increase the gain and alleviate the danger of gate oxide breakdown. The simulation results show that the analog amplifier achieves the power gain of 35dB and the output 1dB compression point of 18dBm at 5GHz. The corresponding output modulation current is up to 50mA at the 1dB compression point. The total chip area is only 710μm×580μm with the all on chip input and output matching network, and the power consumption is 130mW.

2013 ◽  
Vol 433-435 ◽  
pp. 1463-1469 ◽  
Author(s):  
Yi Lin Zheng ◽  
Ying Mei Chen ◽  
Jian Wei Gong ◽  
Jian Guo Yao

The design of a 2.4GHz radio-over-fiber (ROF) laser diode drive amplifier using TSMC 0.18-um CMOS technology is presented in this paper. The proposed drive amplifier is a single-ended two-stage amplifier with the operating voltages of 1.8V and 3.3V. The technique of dynamic bias is employed to enhance linearity. The post simulation results show that the linear amplifier achieves the power gain of 26.26dB, the output 1dB compression point of 20.49dBm at 2.4GHz. The maximum power added efficiency (PAE) is 27.97%. The components are all on chip including the input and output matching network, and the die size is 1.065mm×0.73mm.


2015 ◽  
Vol 719-720 ◽  
pp. 862-868
Author(s):  
Yan Fen Chen ◽  
Fu Hong Zhang

The noise coefficient and the power gain of a low noise amplifier affect the whole performance of the receiver. This paper presents the design and simulation of 2-stage low noise amplifier using the MGA633P8 and TQP3M9028’s S parameters to set S2P files. Not only analyze how to insert elements to match a broadband circuit, but also make some optimization by using the Agilent ADS in the case of small signal. Simulation results show that the proposed work implements a high performance of 2-stage low noise amplifier which works at 824 MHZ to 1980 MHZ, the gain is greater than 25 db, the noise coefficient is less than 0.6, input and output standing wave ratio (SWR) are both less than 1.3.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sujata S.B. ◽  
Anuradha M. Sandi

Purpose The small area network for data communication within routers is suffering from storage of packet, throughput, latency and power consumption. There are a lot of solutions to increase speed of commutation and optimization of power consumption; one among them is Network-on-chip (NoC). In the literature, there are several NoCs which can reconfigurable dynamically and can easily test and validate the results on FPGA. But still, NoCs have limitations which are regarding chip area, reconfigurable time and throughput. Design/methodology/approach To address these limitations, this research proposes the dynamically buffered and bufferless reconfigurable NoC (DB2R NoC) using X-Y algorithm for routing, Torus for switching and Flexible Direction Order (FDOR) for direction finding between source and destination nodes. Thus, the 3 × 3 and 4 × 4 DB2R NoCs are made free from deadlock, low power and latency and high throughput. To prove the applicability and performance analysis of DB2R NoC for 3 × 3 and 4 × 4 routers on FPGA, the 22 bits for buffered and 19 bit for bufferless designs have been successfully synthesized using Verilog HDL and implemented on Artix-7 FPGA development bond. The virtual input/output chips cope pro tool has been incorporated in the design to verify and debug the complete design on Artix-7 FPGA. Findings In the obtained result, it has been found that 35% improvement in throughput, 23% improvement in latency and 47% optimization in area has been made. The complete design has been tested for 28 packets of injection rate 0.01; the packets have been generated by using NLFSR. Originality/value In the obtained result, it has been found that 35% improvement in throughput, 23% improvement in latency and 47% optimization in area has been made. The complete design has been tested for 28 packets of injection rate 0.01; the packets have been generated by using NLFSR.


2019 ◽  
Vol 28 (10) ◽  
pp. 1950162 ◽  
Author(s):  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang

A 36-kHz frequency locked on-chip oscillator is proposed, the proportional-to-absolute temperature (PTAT) current and voltage generator is presented to eliminate conventional temperature-compensated resistors. The resistorless approach reduces the process variation of frequency and the chip area. The oscillator is fabricated in 0.18-[Formula: see text]m standard CMOS process with an active area of 0.072[Formula: see text]mm2. The temperature coefficient of frequency is 48[Formula: see text]ppm/∘C at best and 82.5[Formula: see text]ppm/∘C on average over [Formula: see text]–70∘C and the frequency spread is 1.43% ([Formula: see text]/[Formula: see text] without calibration. The supply voltage sensitivity is 1.8%/V in the range from 0.65[Formula: see text]V to 1[Formula: see text]V and the power consumption is 95[Formula: see text]nW under the supply voltage of 0.65[Formula: see text]V.


2009 ◽  
Vol E92-C (3) ◽  
pp. 352-355
Author(s):  
Ki-Sang JUNG ◽  
Kang-Jik KIM ◽  
Young-Eun KIM ◽  
Jin-Gyun CHUNG ◽  
Ki-Hyun PYUN ◽  
...  

Author(s):  
A. Ferrerón Labari ◽  
D. Suárez Gracia ◽  
V. Viñals Yúfera

In the last years, embedded systems have evolved so that they offer capabilities we could only find before in high performance systems. Portable devices already have multiprocessors on-chip (such as PowerPC 476FP or ARM Cortex A9 MP), usually multi-threaded, and a powerful multi-level cache memory hierarchy on-chip. As most of these systems are battery-powered, the power consumption becomes a critical issue. Achieving high performance and low power consumption is a high complexity challenge where some proposals have been already made. Suarez et al. proposed a new cache hierarchy on-chip, the LP-NUCA (Low Power NUCA), which is able to reduce the access latency taking advantage of NUCA (Non-Uniform Cache Architectures) properties. The key points are decoupling the functionality, and utilizing three specialized networks on-chip. This structure has been proved to be efficient for data hierarchies, achieving a good performance and reducing the energy consumption. On the other hand, instruction caches have different requirements and characteristics than data caches, contradicting the low-power embedded systems requirements, especially in SMT (simultaneous multi-threading) environments. We want to study the benefits of utilizing small tiled caches for the instruction hierarchy, so we propose a new design, ID-LP-NUCAs. Thus, we need to re-evaluate completely our previous design in terms of structure design, interconnection networks (including topologies, flow control and routing), content management (with special interest in hardware/software content allocation policies), and structure sharing. In CMP environments (chip multiprocessors) with parallel workloads, coherence plays an important role, and must be taken into consideration.


Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.


Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.


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