Effect of Nitrogen-to-Total Gas Flow Ratio on the Nanocomposite TiAlBN Coating

2015 ◽  
Vol 761 ◽  
pp. 431-435
Author(s):  
Zulkifli Rosli ◽  
Wai Loon Kwan ◽  
Mohd Warikh Ab Rashid ◽  
Jariah Mohd Juoi ◽  
Nayan Nafarizal
Keyword(s):  
Grain Size ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Boron Concentration ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Chemical Compositions ◽  
Flow Ratio ◽  
X Ray ◽  
Gas Flow Ratio

A nanocomposite TiAlBN (n-TiAlBN) coating has been successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN) at a substrate temperature of 300 °C. The coating was deposited on AISI 316 substrates using a single Ti-Al-BN hot-pressed target. The crystal phases, grain size and chemical composition of the coatings were measured using the glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). The grains size of the n-TiAlBN coating was found to be within the range of 3.5 to 5.7 nm calculated using Scherrer’s formula. The n-TiAlBN coating reached a nitride saturated state at a higher RN (e.g >15%) with the amount of boron concentration to be around 9 at. %. Further, reducing the RN (e.g. 5%) has increased the boron concentration to 16.17 at. %. This paper shows that by carefully control the nitrogen-to-total gas flow ratio (RN) in the n-TiAlBN coating, it indeed gives a significant effect on its crystallographic structure, grain size, and chemical compositions.

EFFECTS OF HYDROGEN GAS FLOW RATIO ON THE QUALITY OF NANO-DIAMOND FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 876-880
Author(s):  
S. G. Wang ◽  
Q. Zhang ◽  
D. J. Yang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
...  
Keyword(s):  
Grain Size ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gaseous Mixture ◽  
Hydrogen Gas ◽  
Chemical Vapor Deposition Method ◽  
Flow Ratio ◽  
Gas Flow Ratio

In this paper, we studied the effects of hydrogen gas flow ratio of [H2]/[N2 + CH4 + H2] on the quality of nanometer diamond (nano-diamond) films prepared by microwave plasma enhanced chemical vapor deposition method. Nano-diamond films were deposited on the silicon substrates from a gaseous mixture of nitrogen, methane and hydrogen. The experimental results show that if only using a gaseous mixture of nitrogen and methane, although we can obtain nano-diamond films with a grain size of about 5nm, the diamond films contain much non-diamond components. With hydrogen addition, and with increasing the hydrogen gas flow ratio from 1 to 10%, the non-diamond components in the films are significantly reduced and the grain size of the films increases from 5nm to 60nm. However optical transmittance of the films increases with increasing hydrogen gas flow ratio from 1 to 7% because of an improvement of film quality, and then decreases with further increasing hydrogen gas flow ratio owing to the increase of film roughness.

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Optical Properties of Silica Films Prepared on Sapphire

2005 ◽  
Vol 475-479 ◽  
pp. 3709-3712 ◽  
Author(s):  
Li Ping Feng ◽  
Zheng Tang Liu
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Silica Films ◽  
Sio2 Films ◽  
X Ray ◽  
Gas Flow Ratio ◽  
Optical And Mechanical Properties ◽  
Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

2008 ◽  
Vol 23 (5) ◽  
pp. 1433-1442 ◽  
Author(s):  
S. Naskar ◽  
S.D. Wolter ◽  
C.A. Bower ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Rf Plasma ◽  
Flow Ratio ◽  
Plasma Chemical Vapor Deposition ◽  
Gas Flow Ratio

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

scholarly journals Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 334
Author(s):  
Rostislav Velichko ◽  
Yusaku Magari ◽  
Mamoru Furuta
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gas Flow ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Activation Temperature ◽  
X Ray ◽  
Gas Flow Ratio ◽  
Temperature Activation

Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped IGZO (IGZO:H), demonstrating a strong potential of this approach. In this paper, we investigated the mechanism for reducing the activation temperature of the IGZO:H films. In situ Hall measurements revealed that oxygen diffusion from annealing ambient into the conventional Ar/O2-sputtered IGZO film was observed at >240 °C. Moreover, the temperature at which the oxygen diffusion starts into the film significantly decreased to 100 °C for the IGZO:H film deposited at hydrogen gas flow ratio (R[H2]) of 8%. Hard X-ray photoelectron spectroscopy indicated that the near Fermi level (EF) defects in the IGZO:H film after the 150 °C annealing decreased in comparison to that in the conventional IGZO film after 300 °C annealing. The oxygen diffusion into the film during annealing plays an important role for reducing oxygen vacancies and subgap states especially for near EF. X-ray reflectometry analysis revealed that the film density of the IGZO:H decreased with an increase in R[H2] which would be the possible cause for facilitating the O diffusion at low temperature.

scholarly journals Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo–Si–N Coating during Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim
Keyword(s):  
Electron Microscopy ◽  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Amorphous Coating ◽  
Flow Ratio ◽  
Working Pressure ◽  
X Ray ◽  
Transmission Electron ◽  
Gas Flow Ratio

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.

The Effects of the Sputter-Etching Parameters on the Formation of Conical Protrusions on the Surface of SUS304 Stainless Steel

2012 ◽  
Vol 535-537 ◽  
pp. 764-767 ◽  
Author(s):  
Tao Bai ◽  
Qing Lian Zhang
Keyword(s):  
Stainless Steel ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Etching Time ◽  
Flow Ratio ◽  
Argon Gas ◽  
Substrate Distance ◽  
Sus304 Stainless Steel ◽  
Gas Flow Ratio ◽  
Sputter Etching

SUS304 stainless steel samples were sputter-etched by a radio frequency (RF) magnetron sputtering apparatus. Correlations between the formation of conical protrusions on the steel surface and sputter parameters, such as sputter power, anode-to-substrate distance, argon gas flow ratio and sputter-etching time were discussed. The results show that the conical protrusion precipitates both uniformly and densely on the surface with the power being 600W, the anode-to-substrate distance being 50mm, the argon gas flow ratio being 50sccm and the sputter-etching time being 6h.

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