Micro-Quality Control on Ultra-Precision Machining of Sapphire Substrates
2010 ◽
Vol 102-104
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pp. 738-741
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Ph Value
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This paper proposed a new approach to control the micro-quality of sapphire substrate, in order to grow GaN on substrate. The main factors that influence macro-quality are the method of slicing, grinding and polishing. Thread speed of slicing is less than 0.5m/s. Ductile mode grinding of substrate is achieved by #3000 diamond wheel and feed of 1μm/r. The suitable polishing conditions are that the SiO2 grain size is less than 10nm, the concentration SiO2 is 3%, pH value of polishing liquid is 10.5 and polishing stress is 190Pa. The undamaged substrates have been obtained steadily. The surface roughness RMS is less than 0.4 nm.
2012 ◽
Vol 565
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pp. 105-110
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2004 ◽
Vol 471-472
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pp. 127-131
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2013 ◽
Vol 25
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pp. 157-173
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2011 ◽
Vol 314-316
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pp. 1960-1964
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2011 ◽
Vol 291-294
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pp. 1764-1767
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2007 ◽
Vol 329
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pp. 27-32
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