Analysis of Thermal Conductivity of LaFeAsO at Low Temperature

2014 ◽  
Vol 1047 ◽  
pp. 1-3
Author(s):  
Netram Kaurav ◽  
K.K. Choudhary
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Phonon Frequency ◽  
Density Wave ◽  
Spin Density Wave ◽  
Charge Carriers ◽  
Scattering Mechanism ◽  
Lattice Contribution ◽  
Maximum Contribution

Thermal conductivity κ (T) of LaFeAsO is theoretically investigated below the spin density wave (SDW) anomaly. The lattice contribution to the thermal conductivity (κph) is discussed within the Debye-type relaxation rate approximation in terms of the acoustic phonon frequency and relaxation time below 150 K. The theory is formulated when heat transfer is limited by the scattering of phonons from defects, grain boundaries, charge carriers, and phonons. The lattice thermal conductivity dominates in LaFeAsO and is an artifact of strong phonon-impurity and-phonon scattering mechanism. Our result indicates that the maximum contribution comes from phonon scatters and various thermal scattering mechanisms provide a reasonable explanation for maximum appeared in κ (T).

EFFECT OF EMBEDDING NANOPARTICLES ON THERMAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS: PHONON SCATTERING MECHANISM

2009 ◽  
Vol 08 (06) ◽  
pp. 551-556 ◽  
Author(s):  
K. K. CHOUDHARY ◽  
D. PRASAD ◽  
K. JAYAKUMAR ◽  
DINESH VARSHNEY
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Lattice Thermal Conductivity ◽  
Present Model ◽  
Phonon Scattering ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Pure Crystal ◽  
Model Hamiltonian ◽  
Heat Carriers

We evolve a theoretical model for quantitative analysis of decrease in thermal conductivity (κ) by embedding ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors. The lattice thermal conductivity by incorporating the scattering of phonons with defects, grain boundaries, electrons, and phonons in the model Hamiltonian are evaluated. It is noticed that the ErAs nanoparticles provide an additional scattering mechanism for phonons. The embedding of ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors, the phonon scattering with point defects and grain boundaries become more efficient, which cause in the decrease of thermal conductivity up to half of its value of pure crystal. Conclusively, the temperature dependent of thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers. Numerical analysis of thermal conductivity from the present model shows similar results as those revealed from experiments.

THERMAL TRANSPORT OF MgB2 SUPERCONDUCTORS: INTERPLAY BETWEEN ELECTRON AND LATTICE-IMPURITY SCATTERING

2007 ◽  
Vol 21 (26) ◽  
pp. 4517-4536 ◽  
Author(s):  
DINESH VARSHNEY ◽  
M. NAGAR ◽  
K. K. CHOUDHARY
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Phonon Scattering ◽  
Theoretical Calculations ◽  
Impurity Scattering ◽  
Metallic Phase ◽  
Scattering Mechanism ◽  
S Wave ◽  
Lattice Contribution ◽  
Relaxation Time Approximation

We use the Kubo model to calculate the lattice contribution to the thermal conductivity (κph) in MgB 2 superconductors. The theory is formulated when heat transfer is limited by the scattering of phonons from defects, grain boundaries, charge carriers, and phonons. The lattice thermal conductivity in normal state of MgB 2 superconductors dominates and is an artifact of strong phonon-impurity and -phonon scattering mechanism. Later on, the electronic contribution to the thermal conductivity (κe) is calculated within relaxation time approximation for π and σ band carriers with s wave symmetry. Such an estimate sets an upper bound on κe and is about 30% of the total heat transfer at room temperature. The validity of the Wiedemann Franz law is also examined and an enhanced Lorenz number is obtained. Both these channels for heat transfer are clubbed and κ tot develops a broad peak at about 120 K, before falling off at higher temperatures weakly. The anomalies reported are well-accounted in terms of the scattering mechanism by phonon and electron with impurities. It is shown that the behavior of the thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers and a balance between electron and lattice contributions. The contribution of carriers toward κ is substantial and is due to the fact that the carriers are condensed and do not carry entropy. We include comparisons with other theoretical calculations on κe and available experimental data. The numerical analysis of heat transfer in the metallic phase of MgB 2 shows similar results as those revealed from experiments.

Thermal conductivity in the ferromagnetic metallic phase of monovalent Ag doped manganites

2014 ◽  
Vol 03 (03) ◽  
pp. 1450015
Author(s):  
Dinesh Varshney ◽  
E. Khan ◽  
Dinesh Choudhary
Keyword(s):  
Thermal Conductivity ◽  
Relaxation Rate ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Metallic Phase ◽  
Charge Carriers ◽  
Metallic State ◽  
Scattering Mechanism ◽  
Doped Manganites ◽  
Heat Carriers

The thermal conductivity (κ) behavior in La 0.75 Ag 0.25 MnO 3 manganites is investigated by probing the phonon, carrier and magnon scattering sources. The acoustic phonon contribution to the thermal conductivity (κph) is investigated within the Debye-type relaxation rate approximation. The scattering of phonon from defects, grain boundaries, charge carriers, and phonon are the major sources. La 0.75 Ag 0.25 MnO 3 witnesses the dominant κph and is artifact of strong phonon–impurity and phonon–phonon scattering mechanism in the ferromagnetic metallic state. The carrier contribution to the thermal conductivity (κe) is estimated following the Wiedemann–Franz law. In the metallic phase spin waves (κm) also shows the importance. It is noticed that κm increases with a T2 dependence on the temperature. The behavior of thermal conductivity (κ) in La 0.75 Ag 0.25 MnO 3 is determined by competition among the several operating scattering mechanisms for the heat carriers and a balance between electron, magnon, and phonon contributions.

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals First-principles predictions of low lattice thermal conductivity and high thermoelectric performance of AZnSb (A = Rb, Cs)

RSC Advances ◽  
2021 ◽  
Vol 11 (25) ◽  
pp. 15486-15496
Author(s):  
Enamul Haque
Keyword(s):  
Thermal Conductivity ◽  
Debye Temperature ◽  
Layered Structure ◽  
First Principles ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Performance

The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity, low Debye temperature, intense phonon scattering, and hence, low lattice thermal conductivity.

Theory of Thermal Conductivity of Micro- and Nano-structured Materials

2009 ◽  
Vol 1172 ◽  
Author(s):  
Gyaneshwar P. Srivastava
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Polycrystalline Diamond ◽  
Comprehensive Treatment ◽  
Si Nanowires ◽  
Quantitative Investigation ◽  
Debye Relaxation ◽  
Structured Materials ◽  
20 Nm

AbstractWe provide a brief discussion of the Boltzmann equation derived Callaway-Debye relaxation time theory of lattice thermal conductivity of micro- and nano-structured materials (of size greater than 20 nm. Incorporated in the theory is a comprehensive treatment of three-phonon scattering events. Using numerical results from this theory, we present a quantitative investigation of the magnitude and temperature variation of the conductivity of CVD polycrystalline diamond films, suspended GaAs nanostructures, Si nanowires, and AlN micro- and nano-ceramics.

scholarly journals Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3854 ◽  
Author(s):  
Jun-Young Cho ◽  
Muhammad Siyar ◽  
Woo Chan Jin ◽  
Euyheon Hwang ◽  
Seung-Hwan Bae ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Practical Applications ◽  
Defect Sites

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

scholarly journals Reduction of Lattice Thermal Conductivity in PbTe Induced by Artificially Generated Pores

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Pore Structure ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Phonon Modes ◽  
Thermal Transport Properties

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.

Phonon scattering due to van der Waals forces in the lattice thermal conductivity of Bi2Te3 thin films

2015 ◽  
Vol 117 (1) ◽  
pp. 015103 ◽  
Author(s):  
Kyeong Hyun Park ◽  
Mohamed Mohamed ◽  
Zlatan Aksamija ◽  
Umberto Ravaioli
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Van Der Waals ◽  
Van Der Waals Forces
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