Poly-NiO/Nb:SrTiO3 Based Resistive Switching Device for Nonvolatile Random Access Memory

2012 ◽  
Vol 605-607 ◽  
pp. 1944-1947
Author(s):  
Cheng Hu ◽  
Yong Dan Zhu
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Carrier Injection ◽  
Forming Process ◽  
Switching Characteristic ◽  
Bipolar Resistive Switching ◽  
Retention Characteristic ◽  
Injection Process ◽  
Current Voltage ◽  
Current Voltage Characteristics

The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly-NiO and Nb:SrTiO3.

scholarly journals Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Yongdan Zhu ◽  
Meiya Li
Keyword(s):  
Resistive Switching ◽  
Depletion Region ◽  
Carrier Injection ◽  
Forming Process ◽  
Reverse Voltage ◽  
Forward Voltage ◽  
Switching Characteristic ◽  
Bipolar Resistive Switching ◽  
Nio Thin Film

Epitaxial NiO film was grown on 0.7% Nb-doped substrates by pulsed laser deposition. TheI-Vcharacteristics of Ag/NiO/Nb-/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb- junctions, and the resistive switching ratio can reach 103at the read voltage of −0.5 V. Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories. These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction.

scholarly journals Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Christiane Ader ◽  
Andreas Falkenstein ◽  
Manfred Martin
Keyword(s):  
Resistive Switching ◽  
Electronic Conductivity ◽  
Random Access ◽  
Mobility Edge ◽  
Bipolar Resistive Switching ◽  
Amorphous Oxides ◽  
Binary Oxides ◽  
Bipolar Switching ◽  
Current Voltage ◽  
Different Types

AbstractResistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on bulk switching in amorphous, binary oxides. Bulk switching was found experimentally in different oxides, for example in amorphous gallium oxide. The forms of the observed current–voltage curves differ, however, fundamentally. Even within the same material, both abnormal bipolar and normal bipolar resistive switching were found. Here, we use a new drift–diffusion model to theoretically investigate bulk switching in amorphous oxides where the electronic conductivity can be described by Mott’s concept of a mobility edge. We show not only that a strong, non-linear dependence of the electronic conductivity on the oxygen content is necessary for bulk switching but also that changing the geometry of the memristive device causes the transition between abnormal and normal bipolar switching.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

First-Principles Modeling for Current-Voltage Characteristics of Resistive Random Access Memories

2013 ◽  
Vol 1562 ◽  
Author(s):  
Takehide Miyazaki ◽  
Hisao Nakamura ◽  
Kengo Nishio ◽  
Hisashi Shima ◽  
Hiroyuki Akinaga ◽  
...  
Keyword(s):  
First Principles ◽  
Oxygen Vacancies ◽  
Electrode Materials ◽  
Random Access ◽  
Model Systems ◽  
Electronic Coupling ◽  
Current Ratio ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Non Equilibrium Green’S Function

ABSTRACTWe present results of first-principles non-equilibrium Green’s function calculations for current-voltage (IV) characteristics of the electrode/HfO2/electrode model systems. In order to investigate the effect of the electrode materials on the IV characteristics, we considered two transition metals for electrode, Ta and W, which are both body-centered-cubic elemental metals but have different valence numbers. We simulated the ON state by placing oxygen vacancies in the HfO2 layer while the OFF state was modeled with HfO2 without oxygen vacancies. At the OFF state, no electric current flowed for -1 V up to +1 V, as expected. At the ON state, however, we found that the absolute current for the Ta electrode was twice as large as that for the W electrode. The analysis of the IV characteristics shows that the electronic coupling between Ta and HfO2 is substantially stronger than that between W and HfO2. Our study demonstrates the importance of the matching between electrode and insulator materials to achieve a high ON- to OFF-current ratio in ReRAMs at a low bias.

scholarly journals Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sueda Saylan ◽  
Haila M. Aldosari ◽  
Khaled Humood ◽  
Maguy Abi Jaoude ◽  
Florent Ravaux ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Differential Resistance ◽  
Oxide Semiconductor ◽  
Bipolar Resistive Switching ◽  
Current Voltage ◽  
Device Structures ◽  
Memristive Systems ◽  
P Type

Abstract This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

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