Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film

2013 ◽  
Vol 750-752 ◽  
pp. 1879-1882
Author(s):  
An Na Yue ◽  
Kun Peng ◽  
Ling Ping Zhou ◽  
Jia Jun Zhu ◽  
De Yi Li
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Electrical Resistivity ◽  
Electron Beam Evaporation ◽  
Structure And Properties ◽  
Aluminum Films ◽  
Treatment Processes ◽  
Cu Thin Film ◽  
Evolution Of Microstructure ◽  
Microelectronic Package

Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.

scholarly journals Change of Chemical Bonding State at Interface between Cu Thin Film and Polyimide Substrate after Heat Treatment.

Shinku ◽  
1996 ◽  
Vol 39 (1) ◽  
pp. 7-10 ◽  
Author(s):  
Satoru IWAMORI ◽  
Takehiro MIYASHITA ◽  
Shin FUKUDA ◽  
Nobuhiro FUKUDA ◽  
Kazufuyu SUDOH
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Chemical Bonding ◽  
Bonding State ◽  
Polyimide Substrate ◽  
Chemical Bonding State ◽  
Cu Thin Film

The Impacts of Heat Treatment on the Material Structure and Properties of Mg-4.0Zn-1.0Ca-0.6Zr Bio-Medical Materials

2013 ◽  
Vol 395-396 ◽  
pp. 662-666
Author(s):  
Xue Fei Zhang ◽  
Tian Guo Zhou ◽  
Ren Guo Guan ◽  
Tong Cui
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Aging Time ◽  
Material Structure ◽  
Structure And Properties ◽  
Treatment Processes ◽  
Maximum Value ◽  
Medical Materials ◽  
Alloy Microstructure ◽  
Strengthening Phases

The Mg-4.0Zn-1.0Ca-0.6Zr alloy was prepared through casting-homogenizing-rolling and the study was made on the alloy microstructure as well as mechanical properties under different heat treatment processes. The result shows that, alloy sheets have their hardness and tensile strength rising at the first phase and inclining later with the extension of aging time, in which the maximum values gained at 12h i.e. 71.2HV and 320MPa accordingly. At 8h of aging the extensibility obtained maximum value of 19.2%, then the value reduced gradually with the continuous aging time. The mechanical properties of alloy sheets increased after tempering process, the reason should be that, inside of the crystal particles rich amount of Mg6Ca2Zn3and MgZn strengthening phases were separated out.

Effect of heat treatment temperature on the microstructure and actuation behavior of a Ti–Ni–Cu thin film microactuator

2010 ◽  
Vol 58 (18) ◽  
pp. 6064-6071 ◽  
Author(s):  
M. Tomozawa ◽  
H.Y. Kim ◽  
A. Yamamoto ◽  
S. Hiromoto ◽  
S. Miyazaki
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Heat Treatment Temperature ◽  
Treatment Temperature ◽  
Cu Thin Film

Effect of heat treatment on nickel manganite thin film thermistors deposited by electron beam evaporation

1999 ◽  
Vol 345 (2) ◽  
pp. 307-311 ◽  
Author(s):  
M Parlak ◽  
T Hashemi ◽  
M.J Hogan ◽  
A.W Brinkman
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Electron Beam ◽  
Electron Beam Evaporation

scholarly journals Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 352 ◽  
Author(s):  
Philipus Hishimone ◽  
Hiroki Nagai ◽  
Masato Morita ◽  
Tetsuo Sakamoto ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Quartz Glass ◽  
Gas Flow ◽  
Spray Coating ◽  
Far Infrared ◽  
Infrared Region ◽  
Precursor Film ◽  
Cu Thin Film ◽  
Resultant Film

A Cu thin film on a quartz glass substrate was fabricated by a wet process involving heat-treatment of a precursor film spray-coated with an aqueous ammonia solution containing Cu(HCOO)2∙4H2O and Cu(II) complex of ethylenediamine-N,N,N′N′-tetraacetic acid. The precursor film that formed on the substrate at 180 °C in air was heat-treated at 350 °C and post annealed at 400 °C by placing an identical-sized glass on top, under Ar gas flow in a tubular furnace. X-ray diffraction pattern of the resultant film showed only peaks of Cu. The resultant film of 100 nm thickness has an adhesion strength and electrical resistivity of 37(7) MPa and 3.8(6) × 10−5 Ω cm, respectively. The images of atomic force and field-emission scanning-electron microscopies revealed a film of well-connected Cu grains with an average surface roughness of 11 nm. The reflectance of the thin film is more than 90% in the far-infrared region. The film’s chemical composition was also examined by using Auger electron spectroscopy.

scholarly journals Investigation of the Structure and Properties of Deformed Semi-Finished Products from Alloys of the Al-REM System Made by the Method of Ingotless Rolling-Extruding

2020 ◽  
Vol 837 ◽  
pp. 9-15
Author(s):  
Vadim Bespalov ◽  
Sergey Sidelnikov ◽  
Viktor Berngardt ◽  
Denis Voroshilov ◽  
Olga Yakivyuk ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Electrical Resistivity ◽  
Chemical Composition ◽  
Grain Structure ◽  
Metallographic Analysis ◽  
Structure And Properties ◽  
Alloy Structure ◽  
Deformed State ◽  
Alloys Of The Al

The article presents the investigation results of the structure and properties of rods of aluminum alloys containing zirconium, cerium and lanthanum after ingotless rolling-extruding (IRE) and heat treatment. The patterns of changes in the microstructure, mechanical properties, electrical resistivity depending on the chemical composition of the alloys, processed by the IRE method and various modes of rods annealing are shown. A metallographic analysis of the grain structure of the samples in a deformed state and after annealing performed. The temperatures at which the alloy structure remains stable and maintains the level of operational properties revealed. The effect of chemical composition on the heat resistance of deformed semi-finished products represented. The study made it possible to evaluate the level of properties of experimental alloys after processing by the method of ingotless rolling-extruding and various modes of rods annealing.

Structure and Properties of WNx Thin Film on GaAs Substrate

1990 ◽  
Vol 216 ◽  
Author(s):  
Dali Mao ◽  
Weili Yu ◽  
Dongliang Lin ◽  
T.L. Lin
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Partial Pressure ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Gaas Substrate ◽  
Schottky Barrier Height ◽  
Stable Phase ◽  
Nitrogen Partial Pressure ◽  
Structure And Properties

ABSTRACTIn this paper, the effect of sputtering parameters on the interfacial reaction and the electronic properties of the WNx system were reported.The report showed that W and W2 N phases were observed in WNx film on GaAs substrate annealed at 800–900°C, in which no UN phase was found and W2N was the stable phase. Throughout the WNx film, W,N distributed uniformly. There was no interdiffusion between WN, films and GaAs substrate annealed at 80°C. However, at 900°C, there was some N in-diffusion to substrate, but no Ga or As out-diffusion. The electrical resistivity p of WNx films increased with increasing nitrogen partial pressure r. All the samples with r<0.2 showed the p below 200 µΩcm. By the I/V measurement, the Schottky Barrier Height was obtained with the value: øB=0.93ev, n=1.30 for WNx/n-GaAs contact that annealed at 850°C, 15 minutes.

Thermal Stability and Electrical Properties of Ag(Al) Metallization

2004 ◽  
Vol 812 ◽  
Author(s):  
Hyunchul C. Kim ◽  
N. David Theodore ◽  
James W. Mayer ◽  
Terry L. Alford
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
High Speed ◽  
Rutherford Backscattering Spectrometry ◽  
Al Alloy ◽  
Good Thermal Stability ◽  
Al Thin Film ◽  
Cu Thin Film

AbstractThe thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO2 layer without any diffusion barrier. The films are stable up to 600 °C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600 °C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

In situ investigation of the interfacial reaction in Sn/Cu system by synchrotron radiation

2010 ◽  
Vol 25 (5) ◽  
pp. 972-975 ◽  
Author(s):  
Kai-Jheng Wang ◽  
Yung-Chi Lin ◽  
Jenq-Gong Duh ◽  
Ching-Yuan Cheng ◽  
Jey-Jau Lee
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Thermal Expansion ◽  
Synchrotron Radiation ◽  
Interfacial Reaction ◽  
Coefficient Of Thermal Expansion ◽  
X Ray ◽  
In Situ Investigation ◽  
Cu Thin Film

In situ investigation of the interfacial reaction in the Sn/Cu thin film during aging, and reflow was carried out by synchrotron radiation with high intensity and high resolution of x-ray. With this technique, the phase transformation and evolution of the Sn/Cu thin film during heat treatment can be directly and continuously investigated. Moreover, the information for coefficient of thermal expansion in intermetallic compounds was also evaluated by this approach.

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