Growth of Carbon Nanocoils Using Chemical Vapor Deposition

2009 ◽  
Vol 79-82 ◽  
pp. 1851-1854
Author(s):  
C.C. Su ◽  
Y.L. Hsieh ◽  
S.H. Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Synthesis Conditions ◽  
Optimum Synthesis ◽  
Coil Geometry ◽  
Vapor Deposition Technique ◽  
Electro Magnetic ◽  
Mechanical Sensing

We present the synthesis of carbon nanocoils using the chemical vapor deposition technique with metal catalysts on silicon substrates. The optimum synthesis conditions and coil geometry are summarized. The coils have distribution of the outside diameter of 300 nm to 1200 nm, wire diameter of 150 nm to 400 nm and the pitch of the coil of 150 nm to 1200 nm. Applications of the developed carbon nanocoils can be electro-mechanical sensing and the electro-magnetic insulation.

Heteroepitaxy of Gallium Arsenide on Germanium Coated Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Shirley S. Chu ◽  
T. L. Chu ◽  
H. Firouzi
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Surface Condition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Deposition Technique ◽  
Vapor Deposition Technique

ABSTRACTSingle crystalline epitaxial GaAs layers have been grown on silicon substrates with a thin germanium interlayer. All semiconductor layers were deposited by the chemical vapor deposition technique. The surface condition of the silicon substrate is an important factor affecting the quality of GaAs/Ge films on silicon. P+/n homojunction solar cells of 0.25 cm2 area with an AM1 efficiency near 12% have been prepared.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

scholarly journals Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1105
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Muhammad Fahad Ehsan ◽  
Asad Mumtaz ◽  
Manzar Sohail ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Sulfide ◽  
Variable Temperature ◽  
Complex Impedance ◽  
Equivalent Circuit Model ◽  
Chemical Vapor ◽  
Relaxation Processes ◽  
Impedance Plot ◽  
Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

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