Property Modification of Copper Phthalocyanine Film by Nitrogen Dioxide Gas

2010 ◽  
Vol 93-94 ◽  
pp. 533-536
Author(s):  
Rawat Jaisutti ◽  
Juagwon Theerasak ◽  
Onanong Chamlek ◽  
Tanakorn Osotchan
Keyword(s):  
Thin Films ◽  
Nitrogen Dioxide ◽  
Crystalline Structure ◽  
Copper Phthalocyanine ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Cupc Film ◽  
High Efficient ◽  
Before And After ◽  
Property Modification

Copper Phthalocyanine (CuPc) thin films have a potential to use as nitrogen dioxide (NO2) gas sensor therefore the study of property modification of CuPc thin film by NO2 gas can lead to a better understanding the sensor operation. CuPc thin films were prepared by thermal vacuum deposition on glass substrate and aluminum interdigitated electrodes. The film characteristics were investigated with and without NO2 gas. These characteristics indicated that the resistance of CuPc film decrease as the NO2 concentration increases. In order to achieve high efficient of sensing properties, the post-deposition film was also annealed. The surface modifications were investigated with different exposed time of NO2 gas. Their properties modifications before and after annealing were investigated on the film morphology and crystalline structure. The surface morphology of the film was examined by atomic force microscopy while the crystalline structure of the film was determined by x-ray diffraction. The electrical measurements of CuPc film exposed to NO2 gas were studied in order to investigate property modification of the CuPc film.

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Charge Carrier Mobility ◽  
Electrical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

Application of Sol-Gel Derived Conductive Oxide LaNiO3 in Pyroelectric Detector

2011 ◽  
Vol 687 ◽  
pp. 233-237
Author(s):  
Jing Wang ◽  
Chuan Wei Zang ◽  
Liang Ying Zhang ◽  
Xi Yao
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Infrared Detector ◽  
Sol Gel ◽  
Voltage Response ◽  
Electrical Measurements ◽  
Pzt Thin Films ◽  
Force Microscopy ◽  
Layer Thin Film

Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.

Structure and morphology in thin films of perfluorinated copper phthalocyanine grown on alkali halide surfaces (001)

2012 ◽  
Vol 16 (07n08) ◽  
pp. 977-984 ◽  
Author(s):  
Enno Lorenz ◽  
Christopher Keil ◽  
Derck Schlettwein
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Copper Phthalocyanine ◽  
Alkali Halides ◽  
Square Lattice ◽  
Force Microscopy ◽  
Lattice Constants ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Ordered Phases

Thin films from the monolayer range to the thickness of 40 nm of the perfluorinated copper phthalocyanine (F16PcCu) were prepared by physical vapor deposition on freshly cleaved (001) faces of the alkali halides NaCl , KCl and KBr . The different lattice constants of the substrates provided sufficient difference to trigger the growth of differently ordered phases of F16PcCu . Electron diffraction, Atomic Force Microscopy and UV-vis spectroscopy were used to characterize the structure for F16PcCu monolayers and for films of increasing average film thickness towards bulk films. A square lattice of flat-lying F16PcCu is proposed for the first monolayers. In the bulk films, phases already described for F16PcCu on other substrates were formed, but also a new phase was discovered.

The Effects of Kcn Etching on Cu-Rich Epitaxial CuInSe2 Thin Films

1996 ◽  
Vol 426 ◽  
Author(s):  
P. Fons ◽  
S. Nikl ◽  
A. Yamada ◽  
M. Nishitanp ◽  
T. Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Etching Time ◽  
Cation Sublattice ◽  
Epitaxial Thin Films ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Integrated Intensity

AbstractA series of Cu-rich CuInSe2 epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/ In ratio of about 2.1–2.6 in the as-grown films. Additionally, the Se/ (In+Cu) ratio was observed to be ∼0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/ In ratio was reduced to ∼0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1000 Å even for etching times as short as 30 seconds. The samples were also evaluated both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001], [101], and [112] directions. A peak was observed at ∼15 degrees in the [001] scan after etching consistant with the presence of the ordered vacancy compound, CuIn3Se5. Additionally the integrated intensity ratios of the chalcopyrite (202) reflection to the chalcopyrite (101) reflection ∝(fCu-fIn)2 along the [101] direction indicated the presence of a near-surface region containing cation sublattice disorder that was subsequently removed by the etching process.

Role of Metal Phthalocyanine in Redox Complex Conductivity of Polyaniline and Aniline Black

1999 ◽  
Vol 03 (07) ◽  
pp. 679-686 ◽  
Author(s):  
FRANCIS P. XAVIER ◽  
ANTO REGIS INIGO ◽  
GEORGE J. GOLDSMITH
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Band Gap ◽  
Copper Phthalocyanine ◽  
Oxidative Polymerization ◽  
Critical Ratio ◽  
Electrical Measurements ◽  
Free Standing

Polyaniline (PA) and aniline black (AB) were prepared in powder form by the chemical method of oxidative polymerization, from which free-standing thin films were obtained by solvent evaporation using N-methyl pyrrolidinone ( NMP ). The thin films contained 2, 4, 6 or 8 wt% AB. Electrical measurements showed that the samples containing 4% AB exhibited the highest photoconductivity of the four concentrations. Thus there appears to be a critical ratio of PA to AB for maximum photoconductivity. Annealing up to 570 K has little effect on the conductivity. Upon adding a small quantity of copper phthalocyanine ( CuPc ) to the PA + AB, the electrical conductivity increased considerably and the optical absorption was extended from the UV to the near IR. The electrical conductivity mechanism is a consequence of a redox process, since AB is the oxidized state of PA and, upon illumination, there is an exchange of charge carriers. The extension of the range of optical absorption upon addition of CuPc is interpreted to suggest that CuPc photosensitizes the material and enhances the carrier transport process in the redox couple. The activation energy from the temperature-dependent conductivity and the band gap from the electrolyte electroreflectance method were determined. The activation energy for 0.4% CuPc is lowest (0.52 eV) and the corresponding band gap is determined to be 3.0 eV. This organic compound could be a good candidate for inexpensive, reliable and efficient solar energy-converting devices.

Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C.W. Hubbard ◽  
U. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Insulator Metal ◽  
Device Applications ◽  
Bst Films ◽  
La Doped

AbstractWe have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

scholarly journals FABRICATION OF AG SB (SXSE1-X)2 /SI HETEROJUNCTION FOR SOLAR CELL APPLICATION

2020 ◽  
pp. 48-56
Author(s):  
Hiba H.ISSA
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
High Efficiency ◽  
Cubic Phase ◽  
Electrical Measurements ◽  
Solar Cell Application ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Size ◽  
Quenching Method

The preparation of the AgSb (SxSe1-x)2 was done by the quenching method. It is a quaternary substance with sulfur. Preparation of AgSb (SxSe1-x)2 thin films with sulfur was done on the glass substrate at room temperature 303K with a pressure vacuum of (0.01) bar by using a technique called pulsed laser deposition at thickness (~100 nanometres). The structural properties of alloys thin films are tested by x-ray diffraction analysis. Our findings showed that all compounds have polycrystalline structure with cubic phase due to the deposition of the AgSb (SxSe1-x)2. The atomic force microscopy is used for showing mean size, wherever mean size decreases, and the roughness becomes more irregularity with the increase of sulphur level in the alloys. The electrical measurements of AgSb (SxSe1-x)2 /p-Si and AgSb (SxSe1-x)2/n-Si heterojunctions which is included I-V properties cell area structures of(0.61) cm2 were measured. The AgSb (SxSe1-x)2/n-Si showed the best results with a maximum open voltage Voc of these heterojunctions with Sulfur level x= 0.4). It was most suitable for solar cell high efficiency (η = 0.07%) at x= 0.4 on n-Si substrate. Keywords: Ag Sb, Quenching Method, Cell Application.

scholarly journals Photoresponse characteristics from vacuum deposited thin film of copper phthalocyanine: dependence on grain size

2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Arka Mandal ◽  
◽  
Biswanath Mukherjee
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Substrate Temperature ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Single Layer ◽  
Optical Power ◽  
Force Microscopy ◽  
Cupc Film ◽  
Layer Thin Film

An organic photodetector (PD) is fabricated with single layer thin film of copper phthalocyanine (CuPc) on glass substrate. The thermal deposition of CuPc film on the substrate was realized under high vacuum and at different substrate temperature (room temperature, 40 ◦C, 70 ◦C, 100 ◦C). The comparison of photoresponse characteristics of CuPc thin film deposited under different conditions showed good improvement with increase in the substrate temperature, and the best performances being observed for the film deposited at substrate temperature of 100 ◦C. The thin film of CuPc characterized through X-ray diffraction (XRD) spectroscopy and atomic force microscopy (AFM) clearly indicated that with increase in substrate temperature, the grain size of CuPc film increased, which improved the crystallinity and hence the photoconductivity of the device. The CuPc thin film based PD displayed stable and reproducible photoswitching characteristics under white light irradiation, with photocurrent modulation by varying in input optical power. The highest photo to dark current ratio and responsitivity of the devices was calculated to be, ca. 6.5 and 7.1 mA-W−1 at low optical power, ca. 14.5 mW-cm−2.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Sign in / Sign up

Export Citation Format

Share Document