Structural and High Frequency Dielectric Properties of Ba(ZrxTi1-x)O3 Films Prepared by Reactive Magnetron Sputtering Using Metal Targets

2014 ◽  
Vol 90 ◽  
pp. 1-6
Author(s):  
Jin Woong Kim ◽  
Hiromi Shima ◽  
Takashi Yamamoto ◽  
Hiroshi Funakubo ◽  
Ken Nishida
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Perovskite Phase ◽  
Reflection Coefficients ◽  
Reactive Magnetron ◽  
High Quality ◽  
High Frequencies ◽  
Single Perovskite Phase ◽  
Low Dielectric ◽  
Dense Microstructure

Ba (ZrxTi1-x)O3(BZT) films with different Zr contents were deposited on (100)MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT films epitaxially grew on MgO substrates with only (001)/(100) orientation and had a single perovskite phase. In all cases, the ratio of Ba/Ti was stoichiometry and BZT films possess a dense microstructure. The effect of Zr content on the crystal structure was studied. The grain size was decreased with increasing Zr content. The dielectric properties of the BZT films were also measured at high frequencies region. The reliability of the high-frequency dielectric properties extracted from the measuredS11reflection coefficients. The capacitance for BZT film showed little dispersion and low dielectric loss at 1-18 GHz. These results indicated that we succeeded in depositing high-quality and potential tunable ferroelectrics for high frequency applications.

scholarly journals Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4017
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
High Frequency ◽  
Ceramic Materials ◽  
Sintering Behavior ◽  
Terahertz Time Domain Spectroscopy ◽  
Very High Frequency ◽  
X Ray ◽  
Low Dielectric ◽  
Very High

New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.

A facile method for the preparation of aliphatic main-chain benzoxazine copolymers with high-frequency low dielectric constants

2018 ◽  
Vol 9 (21) ◽  
pp. 2913-2925 ◽  
Author(s):  
Ming Zeng ◽  
Jiangbing Chen ◽  
Qingyu Xu ◽  
Yiwan Huang ◽  
Zijian Feng ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
High Frequency ◽  
Main Chain ◽  
Polymerization Kinetics ◽  
Dielectric Constants ◽  
Low Dielectric

The effects of the reaction solvent on the preparation, polymerization kinetics, and high-frequency dielectric properties of aliphatic main-chain benzoxazine copolymers were investigated.

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films with Different Annealing Atmosphere

2015 ◽  
Vol 740 ◽  
pp. 28-31
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Hong Di Xue
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Film Surface ◽  
Annealing Atmosphere ◽  
Single Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel technique with different annesling atmosphere. The structure and dielectric properties of the films were researched by XRD, SEM and Agilent. The study found that LSF-Mn (Co, Ni) films under the argon annealing atmosphere were have optimal dielectric properties. And Mn, Co, Ni elements are integrated into La0.5Sr0.5FeO3 lattices with the single perovskite phase. And uniform grain was distribution on the film surface.

scholarly journals High energy storage density with ultra-high efficiency and fast charging–discharging capability of sodium bismuth niobate lead-free ceramics

2021 ◽  
pp. 2150018
Author(s):  
Abdul Manan ◽  
Maqbool Ur Rehman ◽  
Atta Ullah ◽  
Arbab Safeer Ahmad ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Energy Storage ◽  
High Efficiency ◽  
Perovskite Phase ◽  
Discharge Rate ◽  
High Energy ◽  
Low Dielectric ◽  
Dense Microstructure ◽  
Average Grain Size ◽  
Fast Charging ◽  
High Dielectric

Ceramics-based capacitors with excellent energy storage characteristics, fast charging/discharge rate, and high efficiency have received significant attention. In this work, Na[Formula: see text]Bi[Formula: see text]NbO3(NBN) ceramics were processed through solid-state sintering route. The investigated ceramics were crystallized in a single perovskite phase. Dense microstructure, with small average grain size ([Formula: see text]0.92 [Formula: see text]m) is obtained for the investigated ceramics. A high dielectric constant >1000 accompanied by a low dielectric loss was achieved for these ceramics at ambient temperature. A recoverable energy density [Formula: see text]0.92 J/cm3and ultra-high efficiency of 96.33% at 138 kV/cm were obtained at room temperature. Furthermore, a lower discharging time of 0.14 [Formula: see text]s was also achieved. This material is a suitable candidate for power pulsed applications.

NEAR STATIONARY DIELECTRIC PROPERTIES IN HALF-METALLIC FERROMAGNETIC Ag:CrO2 NANOCOMPOSITE PARTICLES AT HIGH FREQUENCIES

2008 ◽  
Vol 22 (14) ◽  
pp. 1423-1429 ◽  
Author(s):  
G. P. SINGH ◽  
S. RAM ◽  
A. K. THAKUR
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Frequency ◽  
Power Loss ◽  
Room Temperature ◽  
Half Metallic ◽  
Nanocomposite Particles ◽  
High Frequencies ◽  
A Value ◽  
Ferromagnetic Particles

Nanocomposite particles of silver modified CrO 2 were synthesized by a chemical CrO 3 → CrO 2 reduction in the presence of Ag + in an aqueous medium whereby the half-metallic ferromagnetic particles of CrO 2 are generated within a shell of silver. The dielectric constant εr, AC resistivity ρAC, and the dielectric power loss were studied after annealing recovered Ag:CrO 2 powder (compacted as the billets), at 300°C for 2 h in air, at 10–1000 kHz frequencies (f) at room temperature. At 10 kHz, the ρr has as large a value as 49, with ρ AC = 106 k Ω-cm and power loss 0.42. As f increases, all the three parameters are decreased monotonically to the values 28, 3.6 kΩ-cm, and 0.06 respectively. Almost a steady εr as well as ρAC value exists, with controlled power loss, useful for high frequency applications over f ≥ 400 kHz .

Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

Molten Salts Synthesis and Dielectric Properties of PMN-PT Ceramics

2005 ◽  
Vol 475-479 ◽  
pp. 1153-1156 ◽  
Author(s):  
Shi Xi Zhao ◽  
Qiang Li ◽  
Feng Bing Song
Keyword(s):  
Particle Size ◽  
Dielectric Properties ◽  
Molten Salts ◽  
Piezoelectric Properties ◽  
Perovskite Phase ◽  
Theoretical Density ◽  
Densification Process ◽  
Single Perovskite Phase ◽  
Dielectric And Piezoelectric Properties

Single perovskite phase PMN-PT powders had been synthesized using molten salts method. The powders of PMN-PT synthesized by MSS had submicrometer particle size and high sinterability, which beneficial to an enhancement of the densification process and a decrease of the sintering temperatures. These advantages have an important bearing on the dielectric properties of these materials. The density of ceramics sintered at 1175°C was up to 98% of the theoretical density. These ceramics had excelled dielectric and piezoelectric properties.

An effective strategy for the preparation of intrinsic low-k and ultralow-loss dielectric polysiloxanes at high frequency by introducing trifluoromethyl groups into the polymers

2020 ◽  
Vol 11 (38) ◽  
pp. 6163-6170
Author(s):  
Fengping Liu ◽  
Xingrong Chen ◽  
Linxuan Fang ◽  
Jing Sun ◽  
Qiang Fang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Effective Strategy ◽  
Low Dielectric ◽  
5 Ghz ◽  
Low K ◽  
Trifluoromethyl Groups

Two new CF3-containing polysiloxanes with low dielectric constant (Dk) and dielectric loss (Df ) at a high frequency of 5 GHz were reported. The sample with two −CF3 groups exhibits better dielectric properties with Dk of 2.53 and ultralow Df of 1.66 × 10−3.

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