Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Florine Conchon ◽  
Pierre-Olivier Renault ◽  
Philippe Goudeau ◽  
Eric Le Bourhis ◽  
Elin Sondergard ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Annealing Temperature ◽  
Protective Coatings ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Thermally Activated ◽  
Post Deposition

AbstractResidual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.

Thermal Residual Stress Relaxation in Sputtered ZnO Film on (100) Si Substrate Studied In Situ by Synchrotron X-Ray Diffraction

2011 ◽  
Vol 681 ◽  
pp. 127-132
Author(s):  
Christopher Krauss ◽  
Guillaume Geandier ◽  
Florine Conchon ◽  
Pierre Olivier Renault ◽  
Eric Le Bourhis ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Relaxation ◽  
Structural Changes ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Compressive Stresses ◽  
Residual Stress Relaxation

Residual stress relaxation in sputtered ZnO films has been studied in-situ by synchrotron x-ray diffraction. The films deposited on (001) Si substrates were thermally treated from 25°C to 700°C. X-ray diffraction 2D patterns were captured continuously during the heating, plateau and cooling ramps. The corrections carried out for compensating the furnace drift are discussed. We first observe an increase of the intrinsic compressive stresses before stress relaxation starts to operate around 370°C. Then, thermal contraction upon cooling dominates so that overall, the large initial compressive film stresses turn to tensile after thermal treatment. The overall behaviour is discussed in terms of structural changes induced by the heat treatment.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

2007 ◽  
Vol 990 ◽  
Author(s):  
Sung-Hoon Chung ◽  
Vladislav Vasilyev ◽  
Evgeni Gorokhov ◽  
Yong-Won Song ◽  
Hyuk-Kyoo Jang
Keyword(s):  
Liquid Phase ◽  
Atomic Layer Deposition ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Structural And Electrical Properties

ABSTRACTWe investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

Effects of Annealing on Properties of (Na,Mg):ZnO Thin Films Deposited by Sol-Gel Method

2014 ◽  
Vol 898 ◽  
pp. 33-36 ◽  
Author(s):  
Cai Zhen Zhang ◽  
Yong Gang Chen ◽  
Su Liu
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Coating Method ◽  
Method Effects ◽  
Structural Surface ◽  
Co Doped

Na/Mg co-doped (Na,Mg):ZnO films were fabricated on pyrex glass substrates by sol-gel spin-coating method. Effects of annealing on properties of the films were particularly investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmittance spectra. The internal stress of the films annealed at different temperature was calculated. Experimental and analytical results show that some NaCl freeze-out derivatives will appear on films when the annealing temperature is too low, with the increasing annealing temperature, the c-axis tensile stress is sharply decreased first, then the c-axis stress was changed into press stress and its value is increased continuously, so the structural, surface and the optical properties of the films improve first and deteriorate afterwards.

scholarly journals Determination of Residual Stresses in an Oxidized Metallic Alloy under Thermal Loadings

Metals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 913
Author(s):  
Zhimao Wang ◽  
Jean-Luc Grosseau-Poussard ◽  
Benoît Panicaud ◽  
Guillaume Geandier ◽  
Pierre-Olivier Renault ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Correction Method ◽  
Lattice Parameter ◽  
European Synchrotron Radiation Facility ◽  
X Ray Diffraction ◽  
Synchrotron Diffraction ◽  
X Ray ◽  
Crystallographic Planes

In order to clarify the mechanical features of a metal under thermal cyclic loading for the system Ni30Cr-Cr2O3, a specific study has been carried out. In the present work, the residual stresses in both the metal and the oxide layer have been investigated. An adapted method is applied to process the experimental results that were obtained by using in-situ high temperature synchrotron diffraction at European Synchrotron Radiation Facility. The sin2ψ analysis provides information about the stress in metal and oxide. X-ray diffraction provides also the lattice parameter between crystallographic planes in the metal. To obtain correct stress values, a correction method is also proposed taking into account different discrepancies sources to ensure the equation of mechanical balance.

The In Situ Study on the Micro-Structural Characters of IF Steel at Early Stage of Recrystallization Using High-Energy X-Ray

2008 ◽  
Vol 575-578 ◽  
pp. 972-977
Author(s):  
He Tong ◽  
Yan Dong Liu ◽  
Q.W. Jiang ◽  
Y. Ren ◽  
G. Wang ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Early Stage ◽  
High Energy ◽  
Fiber Texture ◽  
Interstitial Free ◽  
If Steel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cold Rolled

High-energy synchrotron diffraction offers great potential for experimental study of recrystallization kinetics. A fine experimental design to study the recrystallization mechanism of Interstitial Free (IF) steel was implemented in this work. In-situ annealing process of cold-rolled IF steel with 80% reduction was observed using high-energy X-ray diffraction. Results show that, the diffraction intensity of {001}<110> and {112}<110> belong to α-fiber texture component decreased with the annealing temperature increased while {111}<110> did nearly not change and {111}<112> increased; the FMTH decreasing and d-space changing with annealing temperature increasing indicated that the residual stress relaxed completely during recovery.

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

2014 ◽  
Vol 1655 ◽  
Author(s):  
Fahid Algahtani ◽  
Patrick W Leech ◽  
Geoffrey K Reeves ◽  
Anthony S Holland ◽  
Mark Blackford ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Van Der Pauw ◽  
Heated Stage

ABSTRACTThe formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

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