Nanomorphology of Aluminum Oxide Layer after Argon Ion Bombardment

2015 ◽  
Vol 32 ◽  
pp. 60-65
Author(s):  
Oleg Ashkhotov ◽  
Irina Ashkhotova
Keyword(s):  
Oxide Layer ◽  
Ion Beam ◽  
Polycrystalline Aluminum ◽  
Natural Oxide ◽  
Argon Ion Bombardment ◽  
Argon Ions ◽  
Nitrogen Ion ◽  
Aluminum Oxide Layer ◽  
Electron Energy Loss ◽  
Argon Ion

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) studied the interaction of argon ions with a natural oxide layer of polycrystalline aluminum. It was found that the bombardment of argon ions with an energy lower sputtering threshold Al2O3leads to accumulation of ions bombarding the interstitial voids in the surface, thereby forming a solid solution of atoms of the target, the argon ions and nitrogen ion beam, the captured residual gas from the chamber of the spectrometer.

Influence of Argon Ion Bombardment on Improvement of Surface Properties of Low Density Polyethylene (LDPE)

2015 ◽  
Vol 21 ◽  
pp. 124-135
Author(s):  
M.F. Zaki
Keyword(s):  
Ion Beam ◽  
Chemical Properties ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Pristine Sample ◽  
Surface Samples ◽  
Vis Spectroscopy ◽  
Argon Ion Bombardment ◽  
Argon Ion ◽  
Micro Indentation

In this paper, low-density polyethylene (LDPE) was irradiated by argon ion with different fluences up to 1015 ions/cm2. The optical, chemical and mechanical properties have been investigated using UV-Vis spectroscopy, FTIR and Micro-indentation tester, respectively. The results showed the ion beam bombardment induced decreases in the transmittance of the irradiated polymer samples. This change in transmittance can be attributed to formation of conjugated bonds i.e. possible formation of defects and/or carbon clusters. The indirect optical band gap decreased from 3.0 eV for pristine sample to 2.3 eV for that sample irradiated with the highest fluence of Ar ion beam. Furthermore, the number of carbon atoms and clusters increased with increasing the Ar ion fluences. FTIR spectra showed changes in the chemical properties of the bombarded polymer samples. Argon ion beam inducing increasing in the Vicker's micro-indentation, which may be attributed to the increase in the carbon concentration on the irradiated surface samples and cross-linking effects in the irradiated polyethylene chains.

Tribological Properties of Si-DLC Coatings Synthesized with Nitrogen, Argon Plus Nitrogen, and Argon Ion Beams

1997 ◽  
Vol 504 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
L. C. Sengupta ◽  
J. K. Hirvonen ◽  
D. Dimitrov
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
X Ray Diffraction ◽  
Low Friction ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Disk Friction ◽  
Knoop Microhardness ◽  
Nitrogen Ion ◽  
Argon Ion

ABSTRACTHard, adherent, and low-friction silicon-containing diamond-like carbon coatings (Si-DLC) have been synthesized at room temperature by 40 keV (N+ plus N2+), 50%Ar+/50% (N+ plus N2+), and Ar+ ion beam assisted deposition (IBAD) of a tetraphenyl-tetramethyl-trisiloxane oil on silicon and sapphire substrates. X-ray diffraction analysis indicated that all coatings were amorphous. The average coating wear rate and the average unlubricated steel ball-on-disk friction coefficient, μ, decreased with increasing fraction of nitrogen in the ion beam, along with an increase in the average coating growth rate. The Knoop microhardness and nanohardness values of the coatings synthesized by the mixed argon and nitrogen ion beam were higher than the values for the coatings synthesized with 100% nitrogen or 100%argon ion beams. These friction/wear improvements are tentatively attributed to both increased hardening due to greater penetration and ionization induced hardening by the lighter (N) ions and to the presence of Si02 on the surface of N-bombarded samples.

Microstructural Development in Ion Beam Assisted Evaporation of Ni, Co and Fe Films

1990 ◽  
Vol 202 ◽  
Author(s):  
J.A. Trogolo ◽  
R.A. Roy ◽  
R. Petkie ◽  
J.J. Cuomo ◽  
K. Rajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Microstructural Development ◽  
Transmission Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTThe development of microstructure in metal films deposited by ion-assisted evaporation has been studied by transmission electron microscopy (TEM). Films of Ni, Co, and Fe of about 350 to 500 nm thickness were deposited by electron beam evaporation with concurrent argon ion bombardment during growth. Films grown at high ion/atom ratios develop compressive stress as revealed by lattice dilatation. The trends in grain size, orientation, and shape as a function of ion bombardment are documented by TEM.

Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)

1988 ◽  
Vol 128 ◽  
Author(s):  
Eric Chason ◽  
K. M. Horn ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTUsing in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.

Dual Ion Beam Sputtering for Chromium Nitride as an Alternative to Electroplated Hexavalent Chromium

2005 ◽  
Vol 486-487 ◽  
pp. 301-304
Author(s):  
Kyoung Chul Shin ◽  
Jong Min Lim ◽  
Chong Mu Lee
Keyword(s):  
Corrosion Resistance ◽  
Deposition Rate ◽  
Ion Beam ◽  
Rf Power ◽  
Ion Beam Sputtering ◽  
Chromium Plating ◽  
Beam Sputtering ◽  
Nitrogen Ion ◽  
Dual Ion Beam Sputtering ◽  
Argon Ion

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and even carcinogenic. Therefore, it is indispensable to develop an alternative deposition technique. To explore the feasibility of sputtering as an alternative technique for chromium plating, we investigated the dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrNx deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-powers. The deposition rate of CrNx depends more strongly upon the rf-power for argon ion beam than that of the nitrogen ion beam. The hardness of the CrNx film can be maximized by optimizing the rf-power, so that the volume percent of the Cr2N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrNx film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium.

Properties of Al2O3 films prepared by argon ion assisted deposition

1994 ◽  
Vol 9 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
Mansour S. Al-Robaee ◽  
Ghanashyam M. Krishna ◽  
G.N. Subanna ◽  
Narasimha K. Rao ◽  
S. Mohan
Keyword(s):  
Refractive Index ◽  
Current Density ◽  
Ion Beam ◽  
Ion Energy ◽  
Argon Ions ◽  
Beam Parameters ◽  
Substrate Temperatures ◽  
Argon Ion ◽  
Al2o3 Films ◽  
Deposited Films

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

Effect of Low Energy Hydrogen Implants on Damage Caused by Argon Ion Beam Etching

1983 ◽  
Vol 25 ◽  
Author(s):  
A. Climent ◽  
J.-S. Wang ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Hydrogen Passivation ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Hydrogen Implantation ◽  
Argon Ions ◽  
Argon Ion

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.

Incorporation of Ambient Oxygen During Silicon Deposition and the Effects of Argon Ion Bombardment

1990 ◽  
Vol 201 ◽  
Author(s):  
David W. Brown ◽  
Graham K. Hubler
Keyword(s):  
Electron Beam ◽  
Ion Bombardment ◽  
Electron Beam Evaporation ◽  
Sticking Coefficient ◽  
Adsorption Model ◽  
Silicon Deposition ◽  
Ambient Oxygen ◽  
Argon Ion Bombardment ◽  
Argon Ions ◽  
Argon Ion

AbstractThe composition of SiOx films deposited by electron-beam evaporation of silicon in an oxygen atmosphere was measured as a function of silicon deposition rate and oxygen pressure. The compositions varied between X = 0.03 and 2.1 depending on the ratio of O2 molecules to Si atoms arriving at the substrate. Bombardment with 500 eV argon ions caused X to decrease at low arrival ratio and to increase at higher arrival ratio. The results are analyzed using an adsorption model in which chemisorption of O2 occurs after physisorption into one of two states: one on silicon and one on SiO2. A fit to the data for the unbombarded samples is achieved if physisorption occurs only on silicon. From this fit a sticking coefficient of 0.05 is obtained for O2 chemisorption on silicon. The effects of ion bombardment are consistent with the model if bombardment allows O2 to also physisorb on SiO2 and migrate to silicon where it chemisorbs.

In Situ Ion Beam Cleaning in a Cambridge S-200 SEM

1990 ◽  
Vol 48 (2) ◽  
pp. 266-267
Author(s):  
F.C. Laabs
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Ion Beam ◽  
Energy Dispersive Spectrometer ◽  
Ion Bombardment ◽  
Structural Deformation ◽  
Argon Ion Bombardment ◽  
Argon Ion ◽  
Scanning Electron

The increased use of the scanning electron microscope as a flexible analytical tool has resulted in applying its use to a variety of problems which utilize signals that originate or are controlled by surface properties, including crystallographic orientation, contamination and structural deformation of the surface layer. This paper describes results and observations of efforts to control and remove that layer by energetic argon ion bombardment.Experimental A Kratos Mini-Beam I ion gun was attached to a Cambridge Model S-200 scanning electron microscope utilizing the horizontal port normally occupied by an energy dispersive spectrometer (Figure 1). The EDS spectrometer was moved to a position 35 degrees above the port position. This configuration results in the ion gun lying in a plane perpendicular to the electron beam and 45 degrees to the tilt axis, necessitating tilting the sample toward the ion beam during ion bombardment and, importantly, sputtered material is directed away from the EDS detector.

Microstructural Evolution of Ion Bombarded Copper Thin Films

1999 ◽  
Vol 585 ◽  
Author(s):  
T. Wagner ◽  
D. Müller
Keyword(s):  
Grain Size ◽  
Ion Bombardment ◽  
Low Energy ◽  
Copper Films ◽  
Cu Films ◽  
Grain Sizes ◽  
Argon Ion Bombardment ◽  
Argon Ions ◽  
Argon Ion ◽  
Deposited Films

AbstractThe effect of low-energy ion bombardment on the microstructure of copper films will be described. The copper films have been deposited on SiNx-coated, oxidized Si wafers by magnetron sputtering with a simultaneous bombardment of low-energy argon ions (60 eV). The films were annealed at 450°C in HV. The ion bombardment leads to a stronger and sharper {111} texture of the as-deposited films. After annealing, the ion-bombarded films had a significantly smaller grain size than films produced without ion bombardment. The experimental results will be discussed relating the textures of the as-deposited films with the grain sizes obtained after annealing. Details will be given describing how the microstructure of Cu films can be tailored using low-energy argon ion bombardment.

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