Influence of Film Texture on Reliability of Sol-Gel Derived PZT Thin-Film Capacitors

2013 ◽  
Vol 566 ◽  
pp. 7-11 ◽  
Author(s):  
Takashi Noguchi ◽  
Hideaki Sakurai ◽  
Jun Fujii ◽  
Toshihiro Doi ◽  
Toshiaki Watanabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Dielectric Breakdown ◽  
Sol Gel ◽  
Film Surface ◽  
Deposition Process ◽  
Organic Additive ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

Time-dependent dielectric breakdown (TDDB) of lead titanate zirconate (PZT) thin-film capacitors derived by a sol-gel deposition process has been studied. Without any change in heat treatment conditions such as temperature, ramping rate, and keeping time, the films grain size was varied by adding a small amount of organic additive to PZT sol-gel solution for a control of nucleation to form PZT oxide. The reliability was remarkably improved by fabricating interfaces with multi-annealing process, parallel to film surface when the grain size is greater than film thickness, which seems to suppress conductivity of oxygen vacancies.

Effects of IrO2/Pt Hybrid Electrodes on the Crystallization and Ferroelectric Performances of Sol-gel-derived Pb(Zr,Ti)O3 Thin Film Capacitors

2002 ◽  
Vol 17 (7) ◽  
pp. 1735-1742 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Dong-Yeon Park ◽  
Hyun-Jung Woo ◽  
Dong-Soo Lee ◽  
Jowoong Ha ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Fatigue Performance ◽  
Fatigue Properties ◽  
Chemical Solution ◽  
Pt Electrode ◽  
The Poor ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

The effects of IrO2/Pt layered hybrid bottom and/or top electrode structures on the leakage current density versus voltage (J–V), polarization versus voltage (P–V), ferroelectric imprint, and fatigue properties of chemical-solution-derived Pb(ZrxTi1−x)O3 (PZT, Zr/Ti = 35/65) thin films were investigated. The best P–V and J–V performances were obtained from a capacitor with nonhybrid electrodes (Pt/PZT/Pt capacitor). However, the poor fatigue performance of the capacitor required the adoption of hybrid electrode structures. A thin IrO2 layer, as thin as 6 nm, which was inserted between top Pt electrode and PZT layer was sufficient for improving the fatigue performance without any degradation of the other ferroelectric properties. However, the same layer adopted on the bottom Pt electrode was not effective in improving the fatigue performance with degradation in P–V and J–V properties. This was ascribed to IrO2 layer dissolution into the PZT layer during the crystallization annealing of the PZT thin film. A thicker IrO2 layer resulted in more serious degradation.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors

1995 ◽  
Vol 29 (1-4) ◽  
pp. 145-148 ◽  
Author(s):  
E.L. Colla ◽  
A.L. Kholkin ◽  
D. Taylor ◽  
A.K. Tagantsev ◽  
K.G. Brooks ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Breakdown mechanisms in PZT thin film capacitors

1995 ◽  
Vol 11 (1-4) ◽  
pp. 269-275 ◽  
Author(s):  
In Kyeong Yoo ◽  
Chang Jung Kim ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film
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