Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides

2020 ◽  
Vol 1004 ◽  
pp. 180-185
Author(s):  
Ichiro Mizushima ◽  
Hitoshi Habuka
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Hydrogen Chloride ◽  
Atmospheric Pressure ◽  
Temperature Increase ◽  
Growth Process ◽  
Gas Flow ◽  
Room Temperature ◽  
Chemical Behavior ◽  
Nitrogen Gas

This study evaluated the chemical behavior of an oily byproduct which was formed in the exhaust tube during the silicon carbide epitaxial growth process using various precursors, such as silanes, chlorosilanes, propane, hydrogen chloride and hydrogen. Most of the precursors were spontaneously emitted from the oily byproduct, when the oily byproduct was kept under a nitrogen gas flow at atmospheric pressure and at room temperature. When the oily byproduct was exposed to 2-5 % chlorine trifluoride gas in ambient nitrogen at room temperature, various gaseous fluorides were produced, accompanying a slight temperature increase.

scholarly journals Behavior of Viscous Liquid Byproduct Formed in Exhaust Tube by Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 8 (12) ◽  
pp. P805-P810
Author(s):  
Ichiro Mizushima ◽  
Hitoshi Habuka
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Viscous Liquid ◽  
Growth Process ◽  
Room Temperature ◽  
Product Layer ◽  
Layer Formation ◽  
Low Concentrations ◽  
Related Compounds ◽  
By Products

The behavior of the by-product produced in an exhaust tube by the semiconductor silicon carbide epitaxial growth process was evaluated. The by-product layer was a dark-colored viscous liquid; it captured precursor gases and gaseous by-products, such as hydrogen, monosilane, propane, hydrogen chloride and chlorosilanes. These captured gases were spontaneously emitted in ambient nitrogen at room temperature. By an etching process using a chlorine trifluoride gas at low concentrations in ambient nitrogen, the by-product layer could be safely decomposed to gaseous fluorides of silicon and carbon. After finishing the etching, there remained a small amount of residue which included particles of carbon, silicon carbide and related compounds. Based on these results, the by-product layer formation process was discussed.

SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat

2020 ◽  
Vol 1004 ◽  
pp. 186-192
Author(s):  
Keisuke Kurashima ◽  
Masaya Hayashi ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shin Ichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Coating ◽  
Temperature Increase ◽  
Exothermic Reaction ◽  
Coating Film ◽  
Cleaning Process ◽  
Particle Type ◽  
Nitrogen Gas ◽  
Reaction Heat ◽  
Type Silicon

A silicon carbide epitaxial reactor cleaning process was designed accounting for the exothermic reaction heat between silicon carbide and chlorine trifluoride gas. To avoid the peeling of the susceptor surface coating film, the spontaneous temperature increase due to the exothermic reaction heat was moderated by adding the nitrogen gas. The particle-type silicon carbide deposition could be effectively removed without causing any damage of susceptor.

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

2005 ◽  
Vol 483-485 ◽  
pp. 73-76 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Olof Kordina ◽  
Z. Shishkin ◽  
Shailaja P. Rao ◽  
R. Everly ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Hydrogen Chloride ◽  
Growth Rates ◽  
Growth Process ◽  
Cluster Formation ◽  
Film Morphology ◽  
Hydrogen Carrier ◽  
Low Crystalline

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

scholarly journals Cold Atmospheric Pressure Gliding arc Plasma Jet for Decontamination

2016 ◽  
Vol 24 (3S2) ◽  
pp. 103-108
Author(s):  
Do Hoang Tung ◽  
Bach Sy Minh ◽  
Vu Thi Thom ◽  
Lam Thi Huyen Trang ◽  
Cao Thi Huong ◽  
...  
Keyword(s):  
Uv Radiation ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Room Temperature ◽  
Plasma Jet ◽  
Plasma Discharge ◽  
Arc Plasma ◽  
Gliding Arc ◽  
Gliding Arc Plasma ◽  
Ar Gas

A cold atmospheric pressure gliding arc plasma jet hasbeen developed and applied to disinfection. The size of the plasma output is about 6 mm in diameter and 10 mm in length. Ar gas at a flow rate of 10 slm and 25 W plasma power are used. Plasma discharge is produced between the divergent electrodes and the jet appears as an effluence of the gas flow. When a \textnormal{pseudomonas} culture is placed at 8 mm below the torch for 1minute, where the gas is at room temperature, the bacteria within a 16 mm diameter circle are almost completely killed. As the UV radiation is well below the safety regulation, the bacteria are inactivated by the total effect of UV radiation and others like the reactive species and the charged particles.

Optical Diagnosis of Atmospheric Pressure Gas-Liquid Diffuse Discharge Excited by Nanosecond Pulse Voltage

2014 ◽  
Vol 1058 ◽  
pp. 158-161
Author(s):  
Ya Bo Wei ◽  
Li Zhang ◽  
Peng Chao Jiang ◽  
Shuai Zhang ◽  
De Zheng Yang
Keyword(s):  
Atmospheric Pressure ◽  
Gas Flow ◽  
Room Temperature ◽  
Emission Spectra ◽  
High Voltage Pulse ◽  
Active Species ◽  
Pulse Voltage ◽  
Temperature Plasma ◽  
Diffuse Discharge ◽  
Rising Time

In this paper, A bipolar high voltage pulse with 20 ns rising time was employed to generate diffuse gas-liquid diffuse discharge in helium, and dielectric-free electrode configuration is used to generate room temperature plasma in small gas flow rate, which can be considered as a effective method to reduce the production cost. Discharge images, waveforms of pulse voltage and discharge current, and emission spectra of active species are measured.

Measurement of CS2 Absorption Cross-Sections in the 188–215 nm Region at Room Temperature and Atmospheric Pressure

2020 ◽  
Vol 75 (1) ◽  
pp. 15-21
Author(s):  
Yungang Zhang ◽  
Yongda Wang ◽  
Yunjie Liu ◽  
Xinyu Ai ◽  
Zhiguo Zhang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Carbon Disulfide ◽  
Cross Sections ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Room Temperature ◽  
Absorption Cross ◽  
Experimental Conditions ◽  
Factors Affecting ◽  
Sulfur Containing

Carbon disulfide, an important sulfur-containing species, has strong absorption lines in the wavelength range of 188 nm to 215 nm. It is difficult to accurately measure the absorption cross sections of carbon disulfide because carbon disulfide will be easily converted into carbon sulfide when it is exposed to ultraviolet light. In this study, the absorption cross sections of carbon disulfide were measured by reducing carbon disulfide conversion. The factors affecting carbon disulfide conversion, including gas flow rate, ultraviolet light intensity, and duration of illumination, were studied to reduce the conversion of carbon disulfide by controlling experimental conditions in the experiment. Finally, the absorption cross sections of carbon disulfide at room temperature and atmospheric pressure were calculated using the absorption spectrum and the carbon disulfide concentration in the absence of carbon disulfide conversion. The wavelengths of 16 absorption peaks on the carbon disulfide absorption cross sections of the vibration change were marked. Carbon disulfide has the maximum absorption cross section of 4.5 × 10–16 cm2/molecule at a wavelength of 198.10 nm.

Plasma-Assisted Epitaxial Growth of ZnSe Films In Hydrogen Plasma

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Yamauchi ◽  
T. Hariu
Keyword(s):  
Epitaxial Growth ◽  
Gas Flow ◽  
Optical Emission Spectroscopy ◽  
Hydrogen Plasma ◽  
Optical Emission ◽  
Hydrogen Gas ◽  
Pure Hydrogen ◽  
Mixed Gas ◽  
Nitrogen Gas ◽  
Gas Plasma

ABSTRACTPlasma-assisted epitaxy (PAE) was applied to the growth of ZnSe films on (100) GaAs for low temperature epitaxial growth in hydrogen plasma. High purity ZnSe films were successfully grown by the control of hydrogen gas flow rate and VI/II supply ratio. Hydrogen-chloride gas and nitrogen gas mixed in pure hydrogen gas plasma around 2% respectively resulted in the growth of highly conductive n-type layers (630Scm−1 ) and nitrogen-acceptor doped layers (N-acceptor level∼100meV), however, the control of VI/II supply ratio is also very important for the efficient N-acceptor doping. The plasma optical emission spectroscopy indicated that Se-N is composed by the reaction of -ion with SeH (or Se) in hydrogen and nitrogen mixed gas plasma with Se supply.

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

2017 ◽  
Vol 897 ◽  
pp. 43-46 ◽  
Author(s):  
Kazukuni Hara ◽  
Hiroaki Fujibayashi ◽  
Yuuichi Takeuchi ◽  
Shoichiro Omae
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Epitaxial Growth ◽  
High Speed ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
High Speed Rotation ◽  
Speed Rotation ◽  
Growth Technology

In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 19-22 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Michl Kaiser ◽  
Philip Hens ◽  
Peter J. Wellmann ◽  
Rickard Liljedahl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Phase ◽  
Growth Process ◽  
Room Temperature ◽  
Tantalum Foil ◽  
Photoluminescence Intensity ◽  
Room Temperature Photoluminescence ◽  
Optical Stability ◽  
Morphological Instabilities ◽  
Sublimation Growth

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

scholarly journals 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

2008 ◽  
Vol 600-603 ◽  
pp. 655-658 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Katsumi ◽  
Yutaka Miura ◽  
Keiko Tanaka ◽  
Yasushi Fukai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Atmospheric Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Etch Pits ◽  
Average Roughness ◽  
Horizontal Reactor ◽  
Etched Surface ◽  
Substrate Temperatures

The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate. The etch rate of the Si-face is smaller than that of the C-face. The etched surface of the Si-face shows many hexagonal-shaped etch pits. The C-face after the etching is very smooth with a very small number of round shaped shallow pits. The average roughness of the etched surface tends to be small at the higher temperatures.

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