Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds

2008 ◽  
Vol 600-603 ◽  
pp. 1301-1304 ◽  
Author(s):  
Kęstutis Jarašiūnas ◽  
T. Malinauskas ◽  
R. Aleksiejunas ◽  
Bo Monemar ◽  
V. Ralchenko ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Diffusion Length ◽  
Nonradiative Recombination ◽  
Carrier Generation ◽  
Picosecond Pulses ◽  
Photoelectrical Properties ◽  
Carrier Recombination ◽  
Favorable Conditions ◽  
Low Density Plasma

Defect related carrier recombination and transport properties have been investigated in differently doped HVPE GaN substrates and CVD diamond layers. Carrier generation by interband transitions or by deep-defect photoexcitation were realized for studies of GaN samples by using picosecond pulses at 351 nm or 527 nm. This allowed to create favorable conditions for radiative and nonradiative recombination in the crystals and reveal peculiarities of photoelectrical properties of high and low density plasma in undoped, doped, and compensated GaN. In CVD diamonds, carrier diffusion length was found equal to ~ 0.5 μm and non-dependent on nitrogen density, while the carrier lifetime varied from 0.2 to 0.6 ns.

scholarly journals Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
Gregory M. Berman ◽  
Nathan J. Call ◽  
Richard K. Ahrenkiel ◽  
Steven W. Johnston
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Imaging Techniques ◽  
Electrical Characterization ◽  
Minority Carrier Lifetime ◽  
Industry Standards ◽  
Lock In

AbstractWe evaluate four techniques that image minority carrier lifetime, carrier diffusion length, and shunting in solar cells. The techniques include photoluminescence imaging, carrier density imaging, electroluminescence imaging, and dark lock-in thermography shunt detection. We compare these techniques to current industry standards and show how they can yield similar results with higher resolution and in less time.

Optical Characterization of Compensating Defects in Cubic SiC

2013 ◽  
Vol 740-742 ◽  
pp. 401-404
Author(s):  
Patrik Ščajev ◽  
K. Jarašiūnas ◽  
P.L. Abramov ◽  
S.P. Lebedev ◽  
A.A. Lebedev
Keyword(s):  
Carrier Density ◽  
Nonlinear Optical ◽  
Carrier Lifetime ◽  
Optical Trap ◽  
Optical Characterization ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Carrier Recombination ◽  
P Type

We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibrium carrier dynamics, we analyzed impact of carrier density and temperature on carrier lifetime and recharged trap recovery rate. Large carrier lifetime and small diffusivity at low injections in highly compensated samples and their dependences on injection were explained by optical recharge of compensating aluminum impurities. The complete recharge of the compensating impurities by optical means allowed us to calculate the compensating aluminum density in n-type samples and compensating nitrogen in p-type ones.

Optical Characterization of p-Type 4H-SiC Epilayers

2015 ◽  
Vol 821-823 ◽  
pp. 249-252 ◽  
Author(s):  
Gediminas Liaugaudas ◽  
Donatas Dargis ◽  
Pawel Kwasnicki ◽  
Hervé Peyre ◽  
Roxana Arvinte ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Diffusion Length ◽  
Hole Mobility ◽  
Optical Characterization ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Activation Ratio ◽  
P Type

A series of aluminium doped (from 2×1016to 8×1019cm-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation ratio, the doping related carrier lifetime, hole mobility and excess carrier diffusion length.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry

2004 ◽  
Vol 230-232 ◽  
pp. 1-16 ◽  
Author(s):  
William M. Vetter
Keyword(s):  
Silicon Carbide ◽  
Computer Algorithms ◽  
Reflection Mode ◽  
X Ray ◽  
Back Reflection ◽  
Device Structures ◽  
Reflection Geometry ◽  
Grade Silicon ◽  
Favorable Conditions

Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in semiconductor-grade silicon carbide crystals. Capable of mapping the distribution of axial dislocations across a wafer's area (notably the devastating micropipe defect), it can also provide information on their natures. Under favorable conditions, various other types of defect may be observed in back-reflection topographs of SiC, among which are subgrain boundaries, inclusions, and basal plane dislocations. Observed defect images in backreflection topographs may be simulated using relatively simple computer algorithms based on ray tracing. It has been possible to use back-reflection topographs of SiC substrates with device structures deposited upon them to relate the incidence of defects to device failure.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

scholarly journals Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

2015 ◽  
Vol 43 ◽  
pp. 1-9
Author(s):  
Norihiko Kamata ◽  
Abu Zafor Md. Touhidul Islam
Keyword(s):  
Quantum Wells ◽  
Electrical Contact ◽  
Intensity Change ◽  
Nonradiative Recombination ◽  
Excitation Light ◽  
Light Emitting ◽  
Recombination Centers ◽  
Pl Intensity ◽  
Trap Filling

We have developed an optical method of detecting and characterizing nonradiative recombination (NRR) centers without electrical contact. The method combines a below-gap excitation (BGE) light with a conventional above-gap excitation light in photoluminescence (PL) measurement, and discriminates the PL intensity change due to switching on and off the BGE. A quantitative analysis of the detected NRR centers became possible by utilizing the saturating tendency of the PL intensity change with increasing the BGE density due to trap filling effect. Some experimental results of AlGaAs, InGaN, and AlGaN quantum wells were shown to allocate the development and present status as well as to exemplify their interpretations.

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