Organic Materials for Large Area Electronics

2008 ◽  
Vol 608 ◽  
pp. 159-179 ◽  
Author(s):  
Richard Friend
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Semiconductor Devices ◽  
Large Area ◽  
Active Matrix ◽  
Semiconductor Physics ◽  
Light Emitting ◽  
Wide Range

Organic materials have been developed to operate as the active semiconductor in a wide range of semiconductor devices, including light-emitting diodes, LEDs, field-effect transistors, FETs, and photovoltaic diodes, PVs. The ability to process these materials as thin films over large areas makes possible a range of applications, currently in displays, as LEDs and as active matrix FET arrays, and solar cells. This article reviews developments in semiconductor physics of these materials and in their application in semiconductor devices

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals Donor-Acceptor Interaction in Films of Tetracene–Tetracyanoquinodimethane Heterostructures and Composites

2018 ◽  
Vol 63 (1) ◽  
pp. 70
Author(s):  
M. P. Gorishnyi ◽  
A. B. Verbitsky
Keyword(s):  
Thin Films ◽  
Absorption Spectra ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Charge Transfer Complexes ◽  
Acceptor Interaction ◽  
Light Emitting ◽  
Donor Acceptor ◽  
First Time

The structures and the absorption and photovoltaic spectra of thin films of tetracene (TC) and tetracyanoquinodimethane (TCNQ), as well as the films of their heterostructures (TC/TCNQ) and composites (TC + TCNQ), have been studied. The heterostructures and composites are obtained by the thermal sputtering of the components – successively or simultaneously, respectively – in vacuum. The photovoltaic spectra were measured, by using the condenser method. It is found for the first time that the largest changes ΔD1 in the TC/TCNQ and TC + TCNQ absorption spectra with respect to the sum of the absorption spectra of the components are observed in the intervals of TCNQ dimeric bands at 2.214 eV (ΔD1 < 0) and in all TC bands (ΔD1 > 0). Those changes testify to the formation of charge transfer complexes between the TC (the electron donor) and TCNQ (the electron acceptor) molecules at the interfaces in the TC/TCNQ heterostructures and in the bulk of TC + TCNQ composites, which is also confirmed by the appearance of TC+- and TCNQ−-bands in the photovoltaic spectra of both the heterostructure and composite films. This result is important for a deeper understanding of the operating mechanisms in various potentially imaginable devices based on those heterostructures and composites (solar cells, field-effect transistors, and light-emitting diodes).

scholarly journals Optical Properties of Oligo(9,9-diarylfluorene) Derivatives in Thin Films and Their Application for Organic Light-Emitting Field-Effect Transistors

2007 ◽  
Vol 111 (1) ◽  
pp. 108-115 ◽  
Author(s):  
Takahito Oyamada ◽  
Chih-Hao Chang ◽  
Teng-Chih Chao ◽  
Fu-Chuan Fang ◽  
Chung-Chih Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Organic Light

Ambipolar light-emitting field-effect transistors based on molecular thin films

2006 ◽  
Author(s):  
R. Capelli ◽  
F. Dinelli ◽  
M. A. Loi ◽  
M. Murgia ◽  
M. Muccini
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Molecular Thin Films

Molecular-Wetting Control by Ultrasmooth Pentacene Buffer for High-crystallinity Organic Field-Effect Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Kenji Itaka ◽  
Mitsugu Yamashiro ◽  
Jun Yamaguchi ◽  
Masamitsu Haemori ◽  
Seiichiro Yaginuma ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Electronics ◽  
Field Effect ◽  
High Performance ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Organic Thin Film ◽  
Dielectric Substrates ◽  
Pi Orbitals

ABSTRACTOrganic thin film devices are of interest for a variety of forthcoming ubiquitous electronics applications. In order to build ubiquitous high-performance devices, it is necessary to fabricate crystalline thin films of various organic materials onto “ubiquitous substrates” that are dictated by applications. However, many organic thin films crystallize only on a limited selection of substrates. Unfortunately, promising organic molecules, which have a large overlap of pi-orbitals between molecules, cannot migrate freely on a substrate because of stronger cohesion between molecules than interaction between the molecule and the substrate. Therefore, enhancement of the molecule-substrate interaction, i.e. ‘molecular wettability’ should promote crystallization. We found that an ultrasmooth monolayer of pentacene (C22H14), which can be grown on many general dielectric substrates, changes the molecular wettability of a substrate for other poorly wettable organic materials. We also demonstrate that a field effect transistor (FET) using a crystalline C60 thin film on a pentacene-buffered substrate can have a mobility of 4.9 cm2/Vs, which is 5-fold higher than that of C60 FETs without the buffer. Molecular wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline plastic and molecular electronics.

scholarly journals Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2662
Author(s):  
Julia Fidyk ◽  
Witold Waliszewski ◽  
Piotr Sleczkowski ◽  
Adam Kiersnowski ◽  
Wojciech Pisula ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Solution Temperature ◽  
Attractive Alternative ◽  
Large Area ◽  
Light Emitting ◽  
Practical Applications

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.

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