scholarly journals Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5966
Author(s):  
Chih-Chiang Wu ◽  
Ching-Yao Liu ◽  
Sandeep Anand ◽  
Wei-Hua Chieng ◽  
Edward-Yi Chang ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Switching Frequency ◽  
High Electron ◽  
Flyback Converter ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
High Switching Frequency ◽  
In Series ◽  
Source Voltage ◽  
A Charge

The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off transition. The existing solutions for this problem in the literature produce additional drawbacks such as reducing the switching frequency or introducing many additional components. These drawbacks may outweigh the advantages of using a GaN HEMT over its silicon (Si) alternative. This paper proposes two innovative gate drive circuits for D-mode GaN HEMTs—namely the GaN-switching based cascode GaN HEMT and the modified GaN-switching based cascode GaN HEMT. In these schemes, the Si MOSFET in series with the D-mode GaN HEMT is always turned on during regular operation. The GaN HEMT is then switched on and off by using a charge pump based circuit and a conventional gate driver. Since the GaN HEMT is driven independently, the highly negative gate-to-source voltage surge during turn off is avoided, and in addition, high switching frequency operation is made possible. Only two diodes and one capacitor are used in each of the schemes. The application of the proposed circuits is experimentally demonstrated in a high voltage flyback converter, where more than 96% efficiency is obtained for 60 W output load.

scholarly journals A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1146 ◽  
Author(s):  
Baochao Wang ◽  
Shili Dong ◽  
Shanlin Jiang ◽  
Chun He ◽  
Jianhui Hu ◽  
...  
Keyword(s):  
Comparative Study ◽  
Dead Time ◽  
High Electron Mobility Transistors ◽  
Buck Converter ◽  
Switching Frequency ◽  
High Electron ◽  
Switching Loss ◽  
Gan Hemt ◽  
Switching Losses ◽  
High Switching Frequency

The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

scholarly journals Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Vytautas Jakštas ◽  
Justinas Jorudas ◽  
Vytautas Janonis ◽  
Linas Minkevičius ◽  
Irmantas Kašalynas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Steady Current ◽  
Improved Performance

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher ION/IOFF ratio, reaching values down to 3.0±1.2 mA/cm2 and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

scholarly journals Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Materials ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 2760 ◽  
Author(s):  
Pedro J. Martínez ◽  
Enrique Maset ◽  
Pedro Martín-Holgado ◽  
Yolanda Morilla ◽  
David Gilabert ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
Dynamic Resistance ◽  
High Electron ◽  
Power Switching ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Free Current ◽  
60Co Gamma Radiation

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) characteristics under 60Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about RON_dyn will help elucidate trap behaviors in switching transistors.

Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters

2009 ◽  
Vol 1202 ◽  
Author(s):  
Yu-Lin Wang ◽  
B.H. Chu ◽  
K.H. Chen ◽  
Chih-Yang Chang ◽  
Tanmay P. Lele ◽  
...  
Keyword(s):  
Molecular Beam ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Perkinsus Marinus ◽  
Fast Detection ◽  
Gan Hemt ◽  
Sapphire Substrates ◽  
Electron Mobility Transistors ◽  
Source Current ◽  
Tridacna Crocea

AbstractAntibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT were grown by a molecular beam epitaxy system (MBE) on sapphire substrates. Infected sea waters were taken from the tanks in which Tridacna crocea infected with P. marinus were living and dead. The AlGaN/GaN HEMT showed a rapid response of drain-source current in less than 5 seconds when the infected sea waters were added to the antibody-immobilized surface. The recyclability of the sensors with wash buffers between measurements was also explored. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for Perkinsus marinus detection.

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 808-811
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Ming Hung Weng ◽  
Filippo Giannazzo ◽  
Vito Raineri
Keyword(s):  
Structural Properties ◽  
Surface Defects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Near Surface ◽  
Channel Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of “V-shaped” near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density ns and the channel mobility n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology.

scholarly journals Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 84
Author(s):  
Surajit Chakraborty ◽  
Tae-Woo Kim
Keyword(s):  
Leakage Current ◽  
Schottky Barrier Height ◽  
Stress Condition ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Reverse Leakage Current ◽  
Electron Mobility Transistors ◽  
State Stress

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced reverse leakage current, which improved the Schottky barrier height (SBH) from 0.46 to 0.69 eV by suppression of the interfacial donor state. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT at 308 K showed more reduction under the same off-state stress condition while that of the Ni/Au AlGaN/GaN HEMT increased. However, with temperatures exceeding 308 K under the same off-state stress conditions, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT increases, which can be intensified using the inverse piezoelectric effect. Based on this phenomenon, the present work reveals the necessity for analyzing the concurrent SBH and reliability instability due to the interfacial trap states of the MS contacts.

Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs

2020 ◽  
pp. 2150008
Author(s):  
Ming Yang ◽  
Qizheng Ji ◽  
Xinguang Su ◽  
Weihong Zhang ◽  
Yuanyuan Wang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
Scattering Theory ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gan Hemt ◽  
Polarization Charge ◽  
Electron Mobility Transistors ◽  
Contact Width ◽  
Gan Hemts

For the fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with different Ohmic contact widths, the gate-channel electron mobility is obtained experimentally. Mobility curves show very different values and trends. This phenomenon is investigated with the scattering theory in AlGaN/GaN HEMTs. The reason for the different mobility curves is found to be attributed to the different polarization charge distributions at the AlGaN/GaN interface. The AlGaN/GaN HEMT with a smaller Ohmic contact width corresponds to positive additional polarization charge near the Ohmic contact. The AlGaN/GaN HEMT with a larger Ohmic contact width corresponds to negative additional polarization charge near the Ohmic contact. Changing the Ohmic contact width will be a new dimension to optimize the characteristics of AlGaN/GaN HEMTs effectively.

scholarly journals Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

2021 ◽  
Author(s):  
Samaneh Sharbati ◽  
Iman Gharibshahian ◽  
Thomas Ebel ◽  
Ali A. Orouji ◽  
Wulf-Toke Franke
Keyword(s):  
Analytical Model ◽  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Dimensional Electron Gas ◽  
Recessed Gate

AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

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