Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

2015 ◽  
Vol 821-823 ◽  
pp. 484-487
Author(s):  
Heng Yu Xu ◽  
Qian Yang ◽  
Xiao Lei Wang ◽  
Xin Yu Liu ◽  
Yan Li Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxidation Process ◽  
Interface State ◽  
State Density ◽  
Oxidation Temperature ◽  
Interface Quality ◽  
Temperature Oxidation ◽  
Mos Devices ◽  
High Temperature Process

A high-temperature process is used to enhance the COxdesorption rate to reduce trap density in SiC/SiO2interface for SiC MOSFETs. Interface state density as measured by Terman method and C-ψs method for the oxidation processes at a high temperature of 1350°C show significant improvement compared to traditional Si thermal oxidation temperature of 1200°C. The higher oxidation temperature led to a much faster growth rate and some observable hysteresis in the CV curves, which could be due to electron trap and can be resolved by NOxpost oxidation anneal (POA).

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

2019 ◽  
Vol 963 ◽  
pp. 469-472 ◽  
Author(s):  
Teruaki Kumazawa ◽  
Mitsuo Okamoto ◽  
Miwako Iijima ◽  
Yohei Iwahashi ◽  
Shinji Fujikake ◽  
...  
Keyword(s):  
Field Effect ◽  
Atomic Layer ◽  
Interface Layer ◽  
Interface State ◽  
State Density ◽  
Field Effect Mobility ◽  
Optimal Thickness ◽  
Interface Quality ◽  
Mos Devices ◽  
Layer Deposition

The SiO2/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO2/SiC interface is a well-known method for reducing the interface state density (Dit). In this study, we introduced nitrogen to the SiO2/SiC interface by forming SiNx films using atomic layer deposition (ALD) and thus improved the interface quality. O2 annealing with a SiNx interface layer of optimal thickness enhanced the field effect mobility.

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

2017 ◽  
Vol 897 ◽  
pp. 331-334 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
High Temperature Process ◽  
Lower Temperature

This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected to a post deposition annealing process in N2O. Low interface state density (Dit ≈ 9.0×1011cm-2eV-1) was found at 0.2 eV from EC, which is comparable to the values typically obtained in other lower temperature deposited oxides (e.g., TEOS). A barrier height of 2.8 eV was derived from the Fowler-Nordheim plot, very close to the ideal value expected for SiO2/4H-SiC interface. Basing on these preliminary results, the integration in MOSFETs devices can be envisaged.

Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures

2016 ◽  
Vol 858 ◽  
pp. 627-630 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yen Hung Cheng ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Electrical Characterization ◽  
Practical Method ◽  
Interface State ◽  
State Density ◽  
Interface Quality ◽  
Mos Capacitors ◽  
X Ray ◽  
Mos Devices

The efficient and practical method for SiO2/4H-SiC interface improvement using post-oxidation annealing (POA) in pure N2 ambient was studied by means of x-ray photoelectron spectroscopy (XPS) analysis and electrical characterization. SiC-MOS capacitors with slope-shaped thermal oxides were used to investigate optimal conditions for interface nitridation. It was found that the amount of nitrogen atoms incorporated into the interfaces increased when raised the annealing temperature up to 1400°C, and thin oxide (< 30 nm) was used. Furthermore, N2-POA at 1400°C was proven to be very promising as equivalent to NO-POA in terms of reduced interface state density of SiC-MOS devices.

Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

2019 ◽  
Vol 954 ◽  
pp. 99-103
Author(s):  
Heng Yu Xu ◽  
Cai Ping Wan ◽  
Jin Ping Ao
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
High Temperature Oxidation ◽  
Oxidation Temperature ◽  
Nitrogen Gas ◽  
Mos Capacitors ◽  
Temperature Oxidation ◽  
Mos Devices ◽  
Device Reliability ◽  
Nitrogen Ions

We reported that high oxidation temperature is attributed to break Si-C bond and release nitrogen gas to nitrogen ions over 1350°C. The capacitance-voltage characteristics of SiO2/4H-SiC (0001) MOS capacitors fabricated under different thermal oxidation conditions are compared. The dependence of oxidation temperature on device characteristics (such as VFB and ΔVFB) is also analyzed. After a high temperature oxidation, the device reliability of SiC MOS is improved. Such behavior can be attributed to the reduction of the interface traps during high temperature oxidation.

scholarly journals Friction and Wear of Oxide Scale Obtained on Pure Titanium after High-Temperature Oxidation

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3764
Author(s):  
Krzysztof Aniołek ◽  
Adrian Barylski ◽  
Marian Kupka
Keyword(s):  
High Temperature ◽  
Oxide Scale ◽  
High Temperature Oxidation ◽  
Friction And Wear ◽  
High Carbon Steel ◽  
Oxide Films ◽  
Oxidation Temperature ◽  
Temperature Oxidation ◽  
Wear Ratio ◽  
Steel Balls

High-temperature oxidation was performed at temperatures from 600 to 750 °C over a period of 24 h and 72 h. It was shown in the study that the oxide scale became more homogeneous and covered the entire surface as the oxidation temperature increased. After oxidation over a period of 24 h, the hardness of the produced layers increased as the oxidation temperature increased (from 892.4 to 1146.6 kgf/mm2). During oxidation in a longer time variant (72 h), layers with a higher hardness were obtained (1260 kgf/mm2). Studies on friction and wear characteristics of titanium were conducted using couples with ceramic balls (Al2O3, ZrO2) and with high-carbon steel (100Cr6) balls. The oxide films produced at a temperature range of 600–750 °C led to a reduction of the wear ratio value, with the lowest one obtained in tests with the 100Cr6 steel balls. Frictional contact of Al2O3 balls with an oxidized titanium disc resulted in a reduction of the wear ratio, but only for the oxide scales produced at 600 °C (24 h, 72 h) and 650 °C (24 h). For the ZrO2 balls, an increase in the wear ratio was observed, especially when interacting with the oxide films obtained after high-temperature oxidation at 650 °C or higher temperatures. The increase in wear intensity after titanium oxidation was also observed for the 100Cr6 steel balls.

Oxidation of Tantalum Nitride

2013 ◽  
Vol 761 ◽  
pp. 125-129 ◽  
Author(s):  
Kazuya Hamaguchi ◽  
Tomoyuki Tsuchiyama ◽  
Junichi Matsushita
Keyword(s):  
High Temperature ◽  
Oxide Layer ◽  
Human Body ◽  
Body Fluid ◽  
High Temperature Oxidation ◽  
Tantalum Oxide ◽  
Mass Gain ◽  
Tantalum Nitride ◽  
Oxidation Temperature ◽  
Temperature Oxidation

Tantalum (Ta) can be use a suture for operation and implant material in order not to react with body fluid and stimulate a human body. In this study, the stable oxide of a tantalum, tantalum oxide layer produced by oxidation of the tantalum nitride, TaN powders by high temperature oxidation were investigated in order to determine the possibility of its a distributed aid for biomaterial composite such as an artificial root etc. The sample, TaN powder oxidized at high temperature exhibited a steady mass gain with increasing oxidation temperature. Based on the results of the XRD, tantalum oxide, Ta2O5 was detected on the samples. It is considered, the TaN showed a good oxidation film produced by high temperature oxidation.

INFLUENCE OF THE CROSSLINK STRUCTURE ON THE ACTIVATION ENERGY CALCULATED UNDER THERMO-OXIDATIVE CONDITIONS

2018 ◽  
Vol 91 (1) ◽  
pp. 205-224 ◽  
Author(s):  
Richard J. Pazur ◽  
T. Mengistu
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
High Temperature ◽  
Oxidation Process ◽  
Activation Energies ◽  
Structure Stability ◽  
Temperature Oxidation ◽  
Network Chain ◽  
Temperature Activation ◽  
Sulfur Donor

ABSTRACT A series of six carbon black reinforced brominated poly(isobutylene-co-isoprene) (BIIR) compounds has been developed varying only in cure system type: sulfur, sulfur donor, zinc oxide, peroxide, phenolic resin, and ionic. Compounds were aged from room temperature up to 115 °C, and hardness, mechanical properties, and network chain density were measured. Non-Arrhenius behavior was observed due to data curvature from 70 to 85 °C. The oxidation process was adequately described by assigning low (23–85 °C) and high (85–115 °C) temperature regimes. Heterogeneous aging due to diffusion limited oxygen (DLO) occurred for heat aging above 85 °C, and all measured responses except tensile strength were strongly affected, causing lower activation energies. The activation energy for the high temperature oxidation process is in the range of 107 to 133 kJ/mol in the following ascending order: zinc oxide, ionic, sulfur donor, sulfur, peroxide, and resin. The midpoint of the high temperature activation energies is of the same order as the BIIR and poly(isobutylene) elastomers. The low temperature activation energy is in the range of 55–60 kJ/mol and is likely due to a combination of oxidative chain scission (crosslink density loss) and crosslinking recombination (network building) reactions. Apart from the crosslink structure stability, the presence of unsaturation along the polymer chain after vulcanization affects the high temperature activation energy.

The Limits of Post Oxidation Annealing in NO

2010 ◽  
Vol 645-648 ◽  
pp. 693-696 ◽  
Author(s):  
John Rozen ◽  
Xing Guang Zhu ◽  
Ayayi Claude Ahyi ◽  
John R. Williams ◽  
Leonard C. Feldman
Keyword(s):  
Nitrogen Content ◽  
Oxidation Rate ◽  
Interface State ◽  
State Density ◽  
Annealing Process ◽  
Interface State Density ◽  
Interface Quality

We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

2013 ◽  
Vol 740-742 ◽  
pp. 695-698 ◽  
Author(s):  
Tsuyoshi Akagi ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Device Properties ◽  
Phosphorus Doped ◽  
Post Deposition ◽  
Mos Device

Metal-oxide-semiconductor (MOS) capacitors with phosphorus localized near the SiO2/SiC interface were fabricated on 4H-SiC by direct POCl3treatment followed by SiO2deposition. Post-deposition annealing (PDA) temperature affected MOS device properties and phosphorus distribution in the oxide. The sample with PDA at 800 °C showed narrow phosphorus-doped oxide region, resulting in low interface state density near the conduction band edge and small flatband voltage shift after FN injection. The interfacial localization of phosphorus improved both interface properties and reliability of 4H-SiC MOS devices.

Nondestructive and Local Evaluation of SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Vol 858 ◽  
pp. 469-472 ◽  
Author(s):  
Norimichi Chinone ◽  
R. Kosugi ◽  
Yasunori Tanaka ◽  
Shinsuke Harada ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
High Spatial Resolution ◽  
Interface State ◽  
Higher Order ◽  
State Density ◽  
Strong Correlations ◽  
Interface Quality ◽  
Nonlinear Dielectric ◽  
Spatially Inhomogeneous ◽  
Capacitance Voltage ◽  
Sic Wafer

SiO2/SiC interface was investigated by using super-higher-order (SHO) scanning nonlinear dielectric microscopy (SNDM) with high spatial resolution. Comparison of non-oxidized and thermally oxidized 4H-SiC wafer (Si-face) revealed that only 5 min oxidation makes the interface quality spatially inhomogeneous. Next four SiC wafers treated under different post oxidation annealing (POA) conditions in NO ambient (three “with” and one “without” POA) were also compared. Using SHO-SNDM, local capacitance-voltage (C-V) curves were obtained. The local C-V curve obtained in sample with POA was more close to ideal C-V curve compared to the C-V curves obtained in the sample without POA. In addition, two-dimensional normalized SNDM images taken on the four SiC wafers were observed, which showed that the spatial deviation of interface state was reduced by the POA treatment. Moreover, standard deviations s of the normalized SNDM images were calculated. Then, very strong correlations between σ and interface-state density Dit as well as channel electron mobility μFE were observed.

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