27 kV, 20 A 4H-SiC n-IGBTs

2015 ◽  
Vol 821-823 ◽  
pp. 847-850 ◽  
Author(s):  
Edward van Brunt ◽  
Lin Cheng ◽  
Michael J. O'Loughlin ◽  
Jim Richmond ◽  
Vipindas Pala ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Carrier Lifetime ◽  
Device Fabrication ◽  
Gate Bias ◽  
Pulse Switching ◽  
Edge Termination ◽  
Forward Current ◽  
Photoconductivity Decay ◽  
Chip Size ◽  
Bus Voltage

In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination. Prior to the device fabrication, an ambipolar carrier lifetime of greater than 10 μs was measured on both drift regions by the microwave photoconductivity decay (μPCD) technique. The SiC n-IGBTs exhibit an on-state voltage of 11.8 V at a forward current of 20 A and a gate bias of 20 V at 25 °C. The devices have a chip size of 0.81 cm2and an active conducting area of 0.28 cm2. Double-pulse switching measurements carried out at up to 16 kV and 20 A demonstrate the robust operation of the device under hard-switched conditions; coupled thermal analysis indicates that the devices can operate at a forward current of up to 10 A in a hard-switched environment at a frequency of more than 3 kHz and a bus voltage of 14 kV.

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

2008 ◽  
Vol 600-603 ◽  
pp. 947-950 ◽  
Author(s):  
Jun Hu ◽  
Larry X. Li ◽  
Petre Alexandrov ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao
Keyword(s):  
Energy Loss ◽  
High Power ◽  
Voltage Drop ◽  
Guard Ring ◽  
Power Switching ◽  
Edge Termination ◽  
Forward Current ◽  
Blocking Voltage ◽  
Bus Voltage ◽  
Ac Induction Motor

4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field

2002 ◽  
Vol 80 (23) ◽  
pp. 4390-4392 ◽  
Author(s):  
Masaya Ichimura ◽  
Atsushi Tada ◽  
Eisuke Arai ◽  
Hiroyuki Takamatsu ◽  
Shingo Sumie
Keyword(s):  
Electric Field ◽  
Carrier Lifetime ◽  
External Surface ◽  
Lifetime Measurement ◽  
Bulk Carrier ◽  
Photoconductivity Decay ◽  
Surface Electric Field

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

2012 ◽  
Vol 717-720 ◽  
pp. 247-250 ◽  
Author(s):  
Bernd Zippelius ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Defect Concentration ◽  
Epitaxial Layers ◽  
High Temperature Annealing ◽  
Intrinsic Defects ◽  
Initial Defect ◽  
The Impact

In this paper the impact of high temperature annealing on the formation of intrinsic defects in 4H-SiC such as Z1/2 and EH6/7 was examined. Therefore, three epitaxial layers with various initial concentrations of the Z1/2- and EH6/7-centers (1011 – 1013 cm-3) were investigated. It turns out that depending on the initial defect concentration the high temperature annealing leads to a monotone increase of the Z1/2- and EH6/7-concentration in a temperature range from 1600 to 1750°C. For a defined temperature above these values, the resulting defect concentration is independent of the sample’s initial values. Beside the growth conditions themselves such as C/Si ratio the thermal post-growth processing has a severe impact on the carrier lifetime which must be taken into account during device fabrication.

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

2007 ◽  
Vol 46 (8A) ◽  
pp. 5057-5061 ◽  
Author(s):  
Masashi Kato ◽  
Masahiko Kawai ◽  
Tatsuhiro Mori ◽  
Masaya Ichimura ◽  
Shingo Sumie ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Excess Carrier ◽  
Photoconductivity Decay ◽  
P Type ◽  
Sic Wafer
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