Major Carrier Element Concentrations in SiC Powder and Bulk Crystal

2019 ◽  
Vol 963 ◽  
pp. 26-29
Author(s):  
Ta Ching Hsiao ◽  
S. Tsao ◽  
Sergey Nagalyuk ◽  
Evgeniy Mokhov
Keyword(s):  
Silicon Carbide ◽  
Physical Property ◽  
Concentration Difference ◽  
Critical Elements ◽  
Property Transfer ◽  
Nitrogen Concentrations ◽  
Major Carrier ◽  
Powder Manufacturing ◽  
Secondary Ion ◽  
Carrier Element

Boron, aluminum, and nitrogen are major and critical elements in silicon carbide. The concentrations of these elements influence the electrical properties of silicon carbide and also the generation of defects. Purification was executed in the powder manufacturing process. High purity powder was used to grow the crystal, which was then sliced into wafers in this work. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectrometry (GDMS) were used to measure boron, aluminum, and nitrogen concentrations in wafer and powder to compare the concentration difference. The concentration of the elements varies depending on the element’s physical property. Transfer coefficient is defined as the ratio of element concentration in wafer to powder, which is interesting to realize the element behavior in PVT process and studied in this work.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

2001 ◽  
Vol 78 (2) ◽  
pp. 231-233 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
S. Hishita
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Wear Properties and Surface Structure of Ion Implanted Glassy Carbon

1988 ◽  
Vol 100 ◽  
Author(s):  
Kazuo Yoshida ◽  
Kazuhiko Okuno ◽  
Gen Katagiri ◽  
Akira Ishitani ◽  
Katsuo Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Wear Resistance ◽  
Mass Spectroscopy ◽  
Concentration Distribution ◽  
Amorphous Structure ◽  
Wear Properties ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Wear Tests ◽  
Abrasive Paper

ABSTRACTWear properties of Li+, K+, C+, Cl+, and Ti+ implanted glassy carbons (GC) have been studied by wear tests using silicon carbide abrasive paper. It has been found that ion implantation is effective for improving wear resistance of GC. The measurements of Raman spectra revealed formation of an amorphous structure on the surface. Anomalous depth profiles with flat concentration distribution of Li and K atoms were observed by a secondary ion mass spectroscopy (SIMS). In conclusion. the formation of an amorphous structure seems to explain the improvement in wear resistance.

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

2008 ◽  
Vol 600-603 ◽  
pp. 453-456
Author(s):  
Margareta K. Linnarsson ◽  
J. Isberg ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Synthetic Diamond ◽  
Group Iv ◽  
Boron Diffusion ◽  
Group Iv Semiconductors ◽  
Secondary Ion ◽  
Silicon Silicon

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

scholarly journals Imaging the distribution of the stable isotopes of nitrogen 14N and 15N in biological samples by "secondary-ion emission microscopy".

1988 ◽  
Vol 36 (1) ◽  
pp. 37-39 ◽  
Author(s):  
L Schaumann ◽  
P Galle ◽  
M Thellier ◽  
J C Wissocq
Keyword(s):  
Stable Isotopes ◽  
Relative Concentration ◽  
Root Tip ◽  
Vascular Cylinder ◽  
Concentration Difference ◽  
Secondary Ion Emission ◽  
Clear Cut ◽  
Ion Emission ◽  
Secondary Ion ◽  
Better Than

Thanks to the "secondary-ion emission microscope" (CAMECA IMS 300), we have been able to image the distribution of the stable isotopes of nitrogen 14N and 15N in sections of plant roots (spatial resolution better than 1 micron), as well as to estimate the relative concentrations of these isotopes. The plants used (Lupinus spec.) originated from seeds with natural (i.e., 14N) nitrogen and had been fed for a few days with [15N]-nitrate before sampling. We have found in root sections of 6-day-old plants (prepared at 5 mm from the root tip) a clear-cut regionalization of the distribution of 15N between the vascular cylinder and the cortex. The latter contained approximately 5% 15N (of total nitrogen), whereas the relative concentration of the heavy isotope in the vascular cylinder was significantly lower. The observed concentration difference is probably due to the Casparian strip, which is a barrier for the apoplastic diffusion of solutes from the cortex to the vascular cylinder.

Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC

2006 ◽  
Vol 527-529 ◽  
pp. 629-632 ◽  
Author(s):  
Howard E. Smith ◽  
Bang Hung Tsao ◽  
James D. Scofield
Keyword(s):  
Mass Spectrometry ◽  
Silicon Carbide ◽  
Concentration Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Dopant Profiling ◽  
Depth Profiles ◽  
Empirical Correction ◽  
The Matrix ◽  
Secondary Ion

The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 233-236
Author(s):  
Yi Yu Ou ◽  
Valdas Jokubavicius ◽  
Chuan Liu ◽  
Rolf W. Berg ◽  
Margareta K. Linnarsson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Dopant Concentration ◽  
Wavelength Converter ◽  
Concentration Difference ◽  
White Leds ◽  
Nitrogen Doped ◽  
Boron Doped ◽  
Doping Type

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

Diffusion of Hydrogen in 6H Silicon Carbide

1996 ◽  
Vol 423 ◽  
Author(s):  
M. K. Linnarsson ◽  
J. P. Doyle ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Silicon Carbide ◽  
Diffusion Coefficient ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Defect Complexes ◽  
Induced Defects ◽  
Secondary Ion ◽  
Diffusion Of Hydrogen

Abstract6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 °C and 1150 °C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 °C. A diffusion coefficient of ∼10−14 cm2/s is extracted at 800°C with an approximate activation energy of ∼3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900°C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.

SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique

2006 ◽  
Vol 911 ◽  
Author(s):  
Larry Wang ◽  
Byoung-Suk Park
Keyword(s):  
Silicon Carbide ◽  
Detection Limit ◽  
Measurement Technique ◽  
Nitrogen Doping ◽  
State Of The Art ◽  
Nitrogen Concentration ◽  
Accurate Determination ◽  
Background Doping ◽  
Sims Analysis ◽  
Secondary Ion

AbstractToday's state of the art silicon carbide (SiC) growth can produce semi-insulating crystals with a background doping around 5×1015 atoms/cm3 or lower. It is essential to have an accurate measurement technique with low enough detection limit to measure low level nitrogen concentration. Current SIMS detection limit of low E15 atoms/cm3 will provide accurate determination for nitrogen doping level of 5E16 at/cm3 or higher. In order to determine the lower nitrogen concentration, it is necessary to provide a better detection limit and to separate the contribution of background nitrogen properly. The “raster changing” method provides an accurate way to determine and remove contribution of background nitrogen to the signal, because secondary ion intensities and matrix ion intensities can be analyzed at the same location of the sample by changing the primary beam raster size during a profile. In this study we have succeeded in applying the raster changing method to (a) N in the SiC substrate located under an SiC epi layer, and (b) the detection of N as low as 3E14/ cm3 a bulk-doped SiC substrate.

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

1994 ◽  
Vol 339 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Secondary Ion Mass Spectrometry ◽  
Field Measurements ◽  
Breakdown Field ◽  
Oxygen Compound ◽  
Gate Oxides ◽  
Capacitance Voltage ◽  
Flatband Voltage ◽  
P Type ◽  
Secondary Ion

ABSTRACTMonocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCI3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-Oxygen compound having been formed (ie Al2O3).

Sign in / Sign up

Export Citation Format

Share Document