Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
2019 ◽
Vol 963
◽
pp. 722-725
◽
Keyword(s):
Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral range of 200-400 nm were carried out before and after electron irradiations. Photodetectors with Cr Schottky barriers with thickness of 20 nm and 8 mm diameter were formed on n-4H-SiC CVD epitaxial layers with a thickness of 5 μm and concentration Nd-Na= (1-4) х1014 cm-3. Cr/4H-SiC photodiodes were irradiated by electrons at 0.9 MeV energy with doses (0.2-1) x1016 cm-2.
2009 ◽
Vol 615-617
◽
pp. 565-568
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2020 ◽
Vol 1004
◽
pp. 1104-1108
2021 ◽
Vol 104
◽
pp. 107837
2002 ◽
Vol 47
(12)
◽
pp. 2059-2073
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Keyword(s):
2010 ◽
Vol 10
(8)
◽
pp. 20673-20727
Keyword(s):
Keyword(s):
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