Materials for Devices in Life Science Applications

2007 ◽  
Vol 124-126 ◽  
pp. 1157-1160
Author(s):  
G.P. Li ◽  
Mark Bachman

The unprecedented technology advancements in miniaturizing integrated circuits, and the resulting plethora of sophisticated, low cost electronic devices demonstrate the impact that micro/nano scale engineering can have when applied only to the area of electrical and computer engineering. Current research efforts in micro/nano fabrication technology for implementing integrated devices hope to yield similar revolutions in life science fields. The integrated life chip technology requires the integration of multiple materials, phenomena, technologies, and functions at micro/nano scales. By cross linking the individual engineering fields through micro/nano technology, various miniaturized life chips will have future impacts in the application markets such as medicine and healthcare.

2006 ◽  
Vol 510-511 ◽  
pp. 1066-1069
Author(s):  
G.P. Li ◽  
Mark Bachman

The unprecedented technology advancements in miniaturizing integrated circuits, and the resulting plethora of sophisticated, low cost electronic devices demonstrate the impact that micro/nano scale engineering can have when applied only to the area of electrical and computer engineering. Current research efforts in micro/nano fabrication technology for implementing integrated devices hope to yield similar revolutions in life science fields. The integrated life chip technology requires the integration of multiple materials, phenomena, technologies, and functions at micro/nano scales. By cross linking the individual engineering fields through micro/nano technology, various miniaturized life chips have been developed at UCI that will have future impacts in the application markets such as medicine and healthcare.


1987 ◽  
Vol 91 ◽  
Author(s):  
Don W. Shaw

ABSTRACTRecent successes, such as the demonstration of a 1K SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-areapassive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III–V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.


2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Peter Andersson Ersman ◽  
Roman Lassnig ◽  
Jan Strandberg ◽  
Deyu Tu ◽  
Vahid Keshmiri ◽  
...  

Abstract The communication outposts of the emerging Internet of Things are embodied by ordinary items, which desirably include all-printed flexible sensors, actuators, displays and akin organic electronic interface devices in combination with silicon-based digital signal processing and communication technologies. However, hybrid integration of smart electronic labels is partly hampered due to a lack of technology that (de)multiplex signals between silicon chips and printed electronic devices. Here, we report all-printed 4-to-7 decoders and seven-bit shift registers, including over 100 organic electrochemical transistors each, thus minimizing the number of terminals required to drive monolithically integrated all-printed electrochromic displays. These relatively advanced circuits are enabled by a reduction of the transistor footprint, an effort which includes several further developments of materials and screen printing processes. Our findings demonstrate that digital circuits based on organic electrochemical transistors (OECTs) provide a unique bridge between all-printed organic electronics (OEs) and low-cost silicon chip technology for Internet of Things applications.


2014 ◽  
Vol 2014 (DPC) ◽  
pp. 002057-002086 ◽  
Author(s):  
Yann Lamy ◽  
Haykel Ben Jamaa ◽  
Hughes Metras ◽  
Stéphane Bernabé ◽  
Sylvie Menezo ◽  
...  

The large internet companies' investments indicate an ongoing increase of data-based business volume through the next decades with the rise of the internet of things and the continuous growth of communication and data facilities. The two-figure yearly growth rate of exchanged data volume within data centers is challenging the actual short distance communication paradigms. With datacenter architectures getting larger and “flatter”, the availability of high bandwidth, low power and low cost optical links ranging from less than 1 meter to 1 kilometer is a key issue. It is therefore expected that today's 10 Gb/s transceiver data rate soon increase to 28Gb/s, 40 Gb/s and beyond. For such a channel bandwidth, the copper-based wires are no longer suitable in terms of cost, power and bandwidth density. Optical interconnects are expected to replace copper for short distances below 500 m and down to 1 m within servers and between servers of the same data center. They exhibit much higher scalability and flexibility in terms of bandwidth, reach and lower energy consumption down to 1 pJ/b and below. The integration of optical transceivers close to the computational logic is therefore becoming more and more attractive. The enabling technology for optical interconnect is silicon photonics which is maturing and leveraging the well-established knowledge coming from silicon technology. We today have a complete set of silicon photonics technology modules that cover passive components including multiplexers/demultiplexers, coupling functions, photodetectors, modulators and integrated laser sources. Given the constraints coming from the supply chain, we consider a heterogeneous integration of the photonics (PIC) and the electrical integrated circuits (EIC) within a single package, differentiating from a co-integration of both of them on a single die demonstrated in the past, which is not a viable nor scalable option from the economical point of view. Thereby we leverage our expertise in the 3D integration field, and we use a full set of mature technology modules including through-silicon vias (TSV), wafer thinning and micro-bumping. These modules have only been used in the past within electrical circuits, but their implantation in photonics chips has no showstoppers. The 3D integration enables a stacking of the electrical drivers in the EIC die on top of the photodiodes and modulators in the PIC die. The small micro-bump size reduces the parasitic capacitances and enables an optimized electro-optical co-design. The TSV enable the connection of the stack with the rest of the package and to the second-level interconnect with low inductive losses, thus boosting the system performance. The advanced 3D packaging technique also enables the alignment and attachment of the optical fibers using silicon micro-ferrules. Today's active alignment techniques for optical coupling are time-consuming and expensive, and not compatible with usual micro-electronics techniques. The ongoing development of silicon micro-ferrules with mechanical micro-bumps enables a compatible assembly of the optical plugs with the remaining system and a quick assembly process with standard pick-and-place equipment. The paper will introduce today's system demand in the data base market and its translation into technology requirements. It will then survey our silicon photonics technology modules and actual demonstrations. We will then introduce the packaging constraints and the impact of 3D integration on the system assembly. Finally, we will present our advances in terms of packaging of optical micro-connectors.


2009 ◽  
Vol 1 (4) ◽  
pp. 369-375
Author(s):  
Håkan Berg ◽  
Heiko Thiesies ◽  
Niklas Billström

Low-cost enabling technologies for T/R modules (TRMs) in phased array radars are proposed and analyzed in terms of technology, performance, and cost aspects. Phase and amplitude controlling integrated circuits (ICs) realized in a low-cost standard silicon process are demonstrated. The design of several ICs at the S-, C-, on X-band has shown that silicon germanium is a strong contender for gallium arsenide. This also applies to TRMs suited for military active phased array antenna (AESA) radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 µm SiGe-BiCMOS process with an fT of around 70 GHz. A TRM packaging concept based on soldered surface-mount technology and organic substrates is also demonstrated. A cost analysis concludes that by using the proposed packaging concept and the SiGe core-chip technology, the TRM production cost can be potentially reduced by 70% compared to traditional ceramic hermetic packaging with core chip in GaAs technology.


2021 ◽  
Vol 11 (7) ◽  
pp. 3067
Author(s):  
Dimitris Mourtzis ◽  
John Angelopoulos ◽  
Nikos Panopoulos

As the industrial requirements change rapidly due to the drastic evolution of technology, the necessity of quickly investigating potential system alternatives towards a more efficient manufacturing system design arises more intensely than ever. Production system simulation has proven to be a powerful tool for designing and evaluating a manufacturing system due to its low cost, quick analysis, low risk and meaningful insight that it may provide, improving the understanding of the influence of each component. In this research work, the design and evaluation of a real manufacturing system using Discrete Event Simulation (DES), based on real data obtained from the copper industry is presented. The current production system is modelled, and the real production data are analyzed and connected. The impact identification of the individual parameters on the response of the system is accomplished towards the selection of the proper configurations for near-optimum outcome. Further to that, different simulation scenarios based on the Design of Experiments (DOE) are studied towards the optimization of the production, under predefined product analogies.


Author(s):  
Brynne D. Ovalle ◽  
Rahul Chakraborty

This article has two purposes: (a) to examine the relationship between intercultural power relations and the widespread practice of accent discrimination and (b) to underscore the ramifications of accent discrimination both for the individual and for global society as a whole. First, authors review social theory regarding language and group identity construction, and then go on to integrate more current studies linking accent bias to sociocultural variables. Authors discuss three examples of intercultural accent discrimination in order to illustrate how this link manifests itself in the broader context of international relations (i.e., how accent discrimination is generated in situations of unequal power) and, using a review of current research, assess the consequences of accent discrimination for the individual. Finally, the article highlights the impact that linguistic discrimination is having on linguistic diversity globally, partially using data from the United Nations Educational, Scientific and Cultural Organization (UNESCO) and partially by offering a potential context for interpreting the emergence of practices that seek to reduce or modify speaker accents.


Crisis ◽  
2016 ◽  
Vol 37 (4) ◽  
pp. 265-270 ◽  
Author(s):  
Meshan Lehmann ◽  
Matthew R. Hilimire ◽  
Lawrence H. Yang ◽  
Bruce G. Link ◽  
Jordan E. DeVylder

Abstract. Background: Self-esteem is a major contributor to risk for repeated suicide attempts. Prior research has shown that awareness of stigma is associated with reduced self-esteem among people with mental illness. No prior studies have examined the association between self-esteem and stereotype awareness among individuals with past suicide attempts. Aims: To understand the relationship between stereotype awareness and self-esteem among young adults who have and have not attempted suicide. Method: Computerized surveys were administered to college students (N = 637). Linear regression analyses were used to test associations between self-esteem and stereotype awareness, attempt history, and their interaction. Results: There was a significant stereotype awareness by attempt interaction (β = –.74, p = .006) in the regression analysis. The interaction was explained by a stronger negative association between stereotype awareness and self-esteem among individuals with past suicide attempts (β = –.50, p = .013) compared with those without attempts (β = –.09, p = .037). Conclusion: Stigma is associated with lower self-esteem within this high-functioning sample of young adults with histories of suicide attempts. Alleviating the impact of stigma at the individual (clinical) or community (public health) levels may improve self-esteem among this high-risk population, which could potentially influence subsequent suicide risk.


2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.


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