Growth and Properties of Stannite-Quaternary Cu2ZnSnSe4 Thin Films Prepared by Selenization of Sputtered Binary Compound Precursors

2007 ◽  
Vol 29-30 ◽  
pp. 79-82 ◽  
Author(s):  
Rachmat Adhi Wibowo ◽  
W.S. Kim ◽  
Badrul Munir ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Structural Characteristics ◽  
Film Surface ◽  
Secondary Phase ◽  
Binary Compound ◽  
Stoichiometric Ratio ◽  
Sputtering Deposition ◽  
Corning Glass ◽  
Deposited Films ◽  
Selenization Process

Cu2ZnSnSe4 (CZTSe) thin films were grown on Corning glass 1737 by sequential methods of sputtering deposition and selenization process. As-grown films showed that elemental Cu, Zn, and Sn were in the nearly CZTSe stoichiometric ratio with Se-deficiency as detected by Energy Dispersive X-Ray spectrometry (EDX). In order to attain film stoichiometry, as-deposited films were subjected to selenization process in tube furnace under Ar ambient at different selenization temperatures for 10-60 min. It was found that compositions of binary compound in the sputtering target as well as selenization are critical for the growth of the CZTSe films. The structural characteristics of the selenized CZTSe films revealed a highly oriented stannite CZTSe phase with (112), (220/204) and (312/116) growth orientations and a CuSe secondary phase. By using 0.5% KCN solution, CuSe secondary phase could be totally etched from the CZTSe film surface.

Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors

2007 ◽  
Vol 124-126 ◽  
pp. 931-934 ◽  
Author(s):  
Badrul Munir ◽  
Rachmat Adhi Wibowo ◽  
Eun Soo Lee ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Corning Glass ◽  
Stage Process ◽  
Elemental Layer ◽  
Selenization Process

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing

2009 ◽  
Vol 421-422 ◽  
pp. 143-147
Author(s):  
Masafumi Kobune ◽  
Hideto Tada ◽  
Hisashi Oshima ◽  
Daisuke Horii ◽  
Akihiro Tamura ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Ferroelectric Properties ◽  
Hot Isostatic Pressing ◽  
Film Surface ◽  
Secondary Phase ◽  
Gas Pressure ◽  
Root Mean Square Roughness ◽  
Isostatic Pressing ◽  
Force Microscopy ◽  
Atomic Force

After depositing amorphous (Bi0.5La0.5)(Ni0.5Ti0.5)O3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc- tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800°C for 1 h under gas pressures of 0.51.0 MPa showed good crystallinity of  = 0.960.98 without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800°C for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi4Ti3O12-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800°C for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of Pr = 5 C/cm2 and a coercive field of Ec = 150 kV/cm of the six.

Synthesis of Cu(In0.75Al0.25)Se2 Thin Films from Binary Selenides Powder Compacted Targets by Sputtering and Selenization

2008 ◽  
Vol 135 ◽  
pp. 99-102 ◽  
Author(s):  
Badrul Munir ◽  
Rachmat Adhi Wibowo ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
Secondary Phase ◽  
Structure And Properties ◽  
Structural And Optical Properties ◽  
Good Adhesion ◽  
Sputtering Deposition ◽  
One Step ◽  
Stage Process

Cu(In0.75Al0.25)Se2 thin films were prepared using both one-step sputtering and two-stage process involving sputtering and selenization. Structure and properties of the films were analyzed and compared between the methods. All films had good adhesion to the substrate and showed strong (112), (220)/(204) peaks while minor secondary phase CuxSe was observed in the films from selenization. This paper compares the visibility of one step sputtering process and selenization of sputtered binary selenides layers to produce Cu(InAl)Se2 thin films (CIAS) for solar cell absorber applications. One step sputtering deposition from binary selenides powder compacted targets can produces CIAS films with better structural and optical properties compared to films produced by selenization of sputtered precursors.

Deposition of tin oxide films by pulsed laser evaporation

1988 ◽  
Vol 3 (6) ◽  
pp. 1180-1186 ◽  
Author(s):  
R. D. Vispute ◽  
V. P. Godbole ◽  
S. M. Chaudhari ◽  
S. M. Kanetkar ◽  
S. B. Ogale
Keyword(s):  
Single Phase ◽  
Energy Gap ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Corning Glass ◽  
Tin Oxide Films ◽  
Deposited Films

Thin films of SnO2−x (0<x<1) were deposited on Corning glass and alumina substrates by employing a pulsed laser evaporation (PLE) technique. The microstructural features of the films were probed with Sn119 conversion electron Mössbaucr spectroscopy (CEMS) whereas the structural characteristics were identified by using low-angle x-ray diffraction measurements. The electrical and optical properties have also been studied. It is shown that films with conductivity of 3 × 102 (ohm·cm)−1 and transmission of 90% can be obtained by appropriate postannealing of the as-deposited films in air and vacuum. The energy gap of this nearly stoichiometric single-phase SnO2 film was found to be 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8–1.9 over the wavelength range of 400–800 nm.

Growth of highly oriented La0.84Sr0.16MnO3 perovskite films

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Tunneling Microscopy ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposited Films

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.

SixCy Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties

2012 ◽  
Vol 717-720 ◽  
pp. 197-201 ◽  
Author(s):  
Henrique S. Medeiros ◽  
Rodrigo S. Pessoa ◽  
Júlio C. Sagás ◽  
Mariana A. Fraga ◽  
Lúcia V. Santos ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Stoichiometric Ratio ◽  
Power Sources ◽  
Temperature Growth ◽  
Plasma Sputtering ◽  
Dc Power ◽  
Film Bulk ◽  
Deposited Films

A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied by Rutherford backscattering spectroscopy (RBS), profilometry analysis and Fourier transform infrared absorption (FTIR), respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk.

Optical and Structural Properties of SnO2 Thin Films Deposited by Spray Pyrolysis Technique: Effect of Solution Concentration

2019 ◽  
Vol 397 ◽  
pp. 179-186
Author(s):  
Khaoula Derrar ◽  
Mourad Zaabat ◽  
Imadeddine Zerrouk ◽  
Abdelkader Hafdallah ◽  
Nouhad Rouabah ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Film Surface ◽  
Solution Concentration ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Sem Micrograph ◽  
Small Cracks ◽  
Deposited Films ◽  
Percentage Ratio

In the present work, Tin oxide (SnO2) thin films were deposited by pyrolysis spray technique on glass substrate temperature 400°C, with different solution concentration from (0.05M to 0.2M). Our interest is on the investigation of Effect solution concentration on the structural, optical and morphological properties of the films. Structural analysis by X-ray diffraction showed that the deposited films are polycrystalline in nature with a tetragonal structure having a preferential orientation along the (1 1 0) plane. SEM micrograph proved the existence of small cracks on the film surface, EDS confirmed the composition percentage ratio of Sn and O2 and no trace of impurities could be detected. The spectrophotometer UV-Visible confirms that it is possible to get good transparent SnO2 films with a transmission of 80 to 90% in the visible. The values of optical band gaps vary between 3.6 and 4.0 eV depending on the spraying solution concentration.

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