A design tool fully adapted to the development of the thin film packaging process used for MEMS devices

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000937-000986
Author(s):  
Souchon Frederic ◽  
Gervais Anne-Charlotte ◽  
Thouy Laurent ◽  
Saint-Patrice Damien ◽  
Pornin Jean louis

MEMS Wafer Level Packaging is required for mass production of MEMS devices: wafer to wafer bonding is usually the current solution, however thin film encapsulation becomes a promising alternative method [1]. Nevertheless, major challenges should be overcome to develop thin film encapsulation, namely the development of a thin cap strong enough to withstand high mold pressures. Consequently, design tools are required to develop successfully thin film encapsulation [2–4]. For that, finite element models (FEM) are commonly used, and this article proposes a generic methodology based on an efficient convergence loop to fit FEM results with experimental data. Our convergence loop guarantees reliable predictive FEM results because our results are double checked with experimental characterizations: we use not only the cap geometry evolution during the process flow, but also the mechanical properties of the cap and especially its stiffness. A study case which shows how to manage the cap deflection during the cap release operation is used to illustrate the relevance of our methodology. To recall [5], the thin film encapsulation requires closed cavities formed above the MEMS devices with surface micromachining techniques: the cavity is formed with a sacrificial layer recovered by a cap. The cap is then perforated by holes to remove the sacrificial layer. Finally, a film is deposited on the cap to seal the cap holes. In practice, the release of the sacrificial layer is one of the most critical operations because the cap can damage the MEMS device due to a buckling effect. Indeed, the residual stresses within the capping layer (compressive residual stresses are usually mandatory) and the geometry of the sacrificial layer have to be tuned in order to control the final shape of the cap. The study case is focused on a test structure with a silicon oxide quadratic plate of 800 μm side length and 3 μm thickness. In practice, the cap geometry has been characterized with a mechanical profilometer; and, a force/displacement curve obtained by nano-indentation technique has been used to extract accurately the mechanical properties of the cap. Then, these experimental data have been used to build our FEM model. The correlation between experimental data and FEM results allows verifying our model because we show that the simulated profile and the simulated stiffness fit successfully with experimental data. The best result has been obtained with a 60MPa compressive residual stress; and, this value is in agreement with experimental measurements. We have used our FEM model to detail the effect of several parameters like the silicon oxide thickness, the residual stresses, the height of the cap edge rolls, or the added value of reinforcement solutions as corrugated membrane or metallic layer. Finally, we conclude that our model is an efficient design tool to optimize the thin film encapsulation. For example, it becomes possible to monitor the buckling effect of the cap by the cavity geometry or the cap material residual stresses.

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2133 ◽  
Author(s):  
Anna Persano ◽  
Fabio Quaranta ◽  
Antonietta Taurino ◽  
Pietro Aleardo Siciliano ◽  
Jacopo Iannacci

In this work, SiNx/a-Si/SiNx caps on conductive coplanar waveguides (CPWs) are proposed for thin film encapsulation of radio-frequency microelectromechanical systems (RF MEMS), in view of the application of these devices in fifth generation (5G) and modern telecommunication systems. Simplification and cost reduction of the fabrication process were obtained, using two etching processes in the same barrel chamber to create a matrix of holes through the capping layer and to remove the sacrificial layer under the cap. Encapsulating layers with etch holes of different size and density were fabricated to evaluate the removal of the sacrificial layer as a function of the percentage of the cap perforated area. Barrel etching process parameters also varied. Finally, a full three-dimensional finite element method-based simulation model was developed to predict the impact of fabricated thin film encapsulating caps on RF performance of CPWs.


2010 ◽  
Vol 7 (3) ◽  
pp. 175-180 ◽  
Author(s):  
Krishnan Seetharaman ◽  
Bart van Velzen ◽  
Johannes van Wingerden ◽  
Hans van Zadelhoff ◽  
Cadmus Yuan ◽  
...  

Micro-electromechanical systems (MEMS) devices are extremely sensitive to their environment, especially at the wafer level, until they are packaged in final form. The harsh back-end (BE) operations that the MEMS devices have to endure include dicing, pick-and-place, wire bonding, and molding. During these processing steps, the MEMS device is exposed to particles and contaminants. Therefore, protection at an early stage is a fundamental requirement. We describe a silicon nitride thin-film capping, which is processed using a sacrificial layer technique only with front-end technology. This approach is suitable for mass production of MEMS devices, owing to the fact that it is more cost-effective when compared to other approaches such as wafer-to-wafer bonding and die-to-wafer bonding. A bulk acoustic wave (BAW) resonator that finds application in the radio frequency (RF) front end, for example, in cell phones, is taken as a MEMS vehicle for our work. It is an example of an extremely sensitive MEMS device, because the resonance frequency shifts significantly when additional mass is accidentally deposited on its surface. The thickness of the silicon nitride capping that is required to withstand all the BE steps, in particular transfer molding, is estimated using simple analytical calculations and finite element model (FEM) simulations. The pressure acting on the thin film capping and the thermal load during molding are included in the FEM model. Using this, the minimum thickness required for the capping is determined. We prove that a BAW resonator capped with silicon nitride at the wafer level can be wafer-thinned, diced, wire bonded, and molded without major degradation in performance.


2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000942-000970 ◽  
Author(s):  
Tingji Tang ◽  
Curt Planje ◽  
Ramachandran K. Trichur ◽  
Xing-Fu Zhong ◽  
Shelly Fowler ◽  
...  

Micro-electro-mechanical system (MEMS) is rapidly becoming a critical part of advanced fabrication technology such as cellular phones, micromirrors, radio frequency (RF) devices, microprobes, and pressure sensors. Release etching of a sacrificial layer of silicon oxide plays an important role in creating the moving parts during these MEMS device fabrication. Traditionally, wet fluorinated etchants have been applied in order to achieve release etching, by which liquid surface tension can cause the MEMS microstructures to stick together (“stiction”) upon removing from aqueous bath or during the drying of released wet-etched structure. It has been demonstrated that using a hydrofluoric acid (HF) vapor release etch can efficiently circumvent stiction phenomena owing to the fact that it substantially eliminates the surface tension that causes the stiction. Conventionally, inorganic based films such as silicon nitride, alumina, SiC, polysilicon, amorphous silicon, and aluminum etc were used as vapor HF etch-resistant mask materials, which require very high temperature and vacuum deposition techniques often lengthy, complicated and costly. Herein, a novel spin-on and polymeric blanket HF-resistant coating material is presented to provide protection of both silicon oxide and aluminum against HF attack during vapor HF etching. Our newly developed polymeric coatings can be processed at lower temperature (<250 °C) and thinner films (less than 10μm) for extended vapor HF etching period (longer than 1 hour). Hence, our vapor HF resistant materials will enable the MEMS industry to significantly lower the cost of manufacturing MEMS devices and will significantly simplify the manufacturing process as well.


2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000891-000924
Author(s):  
Krishnan Seetharaman ◽  
Bart van Velzen ◽  
Hans van Zadelhoff ◽  
Cadmus Yuan ◽  
Frank Rietveld ◽  
...  

Micro-electromechanical systems (MEMS) devices are extremely sensitive to their environment, especially at wafer-level, until they are packaged in final form. The harsh back-end (BE) operations that the MEMS devices have to endure include dicing, pick-and-place, wire bonding and molding. During these processing steps, the MEMS device is exposed to particles and contaminants. Therefore, protection at an early stage is a fundamental requirement. In this work, we describe a silicon nitride thin-film capping, which is processed using a sacrificial layer technique only with front-end technology. This approach is suitable for mass production of MEMS devices, owing to the fact that, it is more cost-effective when compared to other approaches such as wafer-to-wafer bonding and die-to-wafer bonding. A Bulk Acoustic Wave (BAW) resonator, that finds application in the Radio Frequency (RF) front end, e.g., in cell phones, is taken as a MEMS vehicle for our work. It is an example of an extremely sensitive MEMS device, because the resonance frequency shifts significantly when additional mass is accidentally deposited on its surface. The thickness of the silicon nitride capping that is required to withstand all the BE steps, in particular transfer molding, is estimated using simple analytical calculations and finite element model (FEM) simulations. The pressure acting on the thin film capping and the thermal load during molding are included in the FEM model. Using this, the minimum thickness required for the capping is determined. We prove that, a BAW resonator capped with silicon nitride at wafer-level can be wafer-thinned, diced, wire bonded and molded without major degradation in its performance.


Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 87
Author(s):  
Zhenxi Liu ◽  
Jiamin Chen ◽  
Xudong Zou

The piezoelectric cantilever resonator is used widely in many fields because of its perfect design, easy-to-control process, easy integration with the integrated circuit. The tip displacement and resonance frequency are two important characters of the piezoelectric cantilever resonator and many models are used to characterize them. However, these models are only suitable for the piezoelectric cantilever with the same width layers. To accurately characterize the piezoelectric cantilever resonators with different width layers, a novel model is proposed for predicting the tip displacement and resonance frequency. The results show that the model is in good agreement with the finite element method (FEM) simulation and experiment measurements, the tip displacement error is no more than 6%, the errors of the first, second, and third-order resonance frequency between theoretical values and measured results are 1.63%, 1.18%, and 0.51%, respectively. Finally, a discussion of the tip displacement of the piezoelectric cantilever resonator when the second layer is null, electrode, or silicon oxide (SiO2) is presented, and the utility of the model as a design tool for specifying the tip displacement and resonance frequency is demonstrated. Furthermore, this model can also be extended to characterize the piezoelectric cantilever with n-layer film or piezoelectric doubly clamped beam.


Nano Research ◽  
2021 ◽  
Author(s):  
Emma N. Welbourne ◽  
Tarun Vemulkar ◽  
Russell P. Cowburn

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.


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