Packaging Materials for Flip Chip and WLP: Underfill Design Using FEM for FC-BGA, FC-CSP, and Moving Towards 2.5/3D.

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001295-001327
Author(s):  
Brian Schmaltz ◽  
Yukinari Abe ◽  
Kazuyuki Kohara

As technology nodes progress to 16/14nm and beyond underfill materials are presented with the significantly challenging task of maintaining bump protection while ensuring low warpage for ultra low-K dielectric (ULK/ELK) integrity. This challenge is further complicated by the trend toward RoHS compliancy (lead-free) and an ever increasing die size (beyond 25x25mm). Through extensive research and testing, several specifically formulated underfill materials were determined acceptable solutions for these complex issues. As technology nodes progress to smaller processes high stress concentrations are seen at the dielectric layer during thermal cycling. This stress is a typical result of a high glass transition temperature (Tg) / high strength material that often leads delamination or a cracking failure mode of the thin dielectric layer. Too low of a Tg presents a high stress concentration on the bumps which once again constitutes failure, this time, however, the crack is typically seen at the bump location. This high stress concentration seen at the bumps is more significant when lead free bumps are considered due to their inherent fragile nature. Underfill materials must now be specifically optimized for variable package conditions to solve these failure modes for a large variation of package designs. Desired material properties must be quickly calculated using finite element methods. This paper will discuss solutions to typical failure modes currently seen in reliability testing of present and future technologies.

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001465-001485
Author(s):  
Brian Schmaltz ◽  
Yukinari Abe ◽  
Kazuyuki Kohara

As technology nodes progress to 32/28nm and beyond underfill materials are presented with the significantly challenging task of maintaining bump protection while ensuring ultra low-K dielectric (ULK/ELK) integrity. This challenge is further complicated by the trend toward RoHS compliancy(lead-free) and a ever increasing die size. Through extensive research and testing, several specifically formulated underfill materials were determined acceptable solutions for these complex issues. As technology nodes progress to smaller process generations a high stress concentration is seen at the dielectric layer during thermal cycling. This stress is a typical result of a high glass transition temperature (Tg) / high strength material that often leads to a cracking failure mode of the thin dielectric layer. Too low of a Tg presents a high stress concentration on the bumps which once again constitutes failure, this time however the crack is typically seen at the bump location. This high stress concentration seen at the bumps is more significant when lead free bumps are considered due to their inherent fragile nature. Underfill materials must now be specifically formulated and optimized to solve these failure modes for a large variable of package types. This paper will discuss solutions to typical failure modes currently seen with reliability testing of present and future technologies.


2017 ◽  
Vol 18 (2) ◽  
Author(s):  
Yudi Dwianda ◽  
Hendery Dahlan ◽  
Meifal Rusli

ABSTRAK Salah satu mekanisme kegagalan yang utama dalam aplikasi teknik atau komponen mesin adalah penjalaran retak kelelahan. Penjalaran retak ini biasanya dimulai dari titik-titik pada daerah yang mengalami konsentrasi tegangan yang tinggi. Oleh karena itu salah satu metode untuk menghambat penjalaran retak adalah  mereduksi konsentrasi tegangan dimana salah satu metode yang digunakan adalah pemberian lubang di ujung retak atau dikenal dengan stop-drilled hole (SDH). Pada penelitian ini akan dikembangkan modifikasi bentuk model SDH. Pada dasarnya model yang dikembangkan ini adalah merubah bentuk pada sisi lubang agar tidak berbentuk lengkungan sehingga  konsentrasi tegangan menurun di daerah tersebut. Pemodelan lubang yang dikembangkan pada peneltian ini adalah penggambungan dua lubang dan tiga lubang pada ujung retak. Pada penelitian ini akan dilakukan penghitungan faktor konsentrasi tegangan untuk variasi jari-jari lubang yang diberikan. Dari penelitian yang telah dilakukan dapat disimpulkan bahwa pemberian dua lubang dan tiga lubang pada ujung cetak tersebut dapat mereduksi faktor konsentrasi tegangan dengan signifikan, nilai faktor konsentrasi tegangan antara dua lubang dan tiga lubang tidak berbeda signifikan terutama dengan meningkatnya nilai jari-jari lubang. Sementara itu, faktor konsentrasi tegangan tetinggi terjadi pada daerah perubahan geometri pada lubang untuk pemberian dua atau tiga lubang, akan tetapi faktor konsentrasi tegangannya masih cukup rendah jika dibandingkan dengan pemberian satu lubang. Kata Kunci : Konsentrasi Tegangan, Penjalaran Retak, Stop-Drilled Hole (SDH)   ABSTRACT One of the major failure mechanisms in engineering applications or machine components is the propagation of fatigue cracking. The spreading of these cracks usually are started from the points on the regions that are  experiencing high stress concentrations. Therefore, one of the method to inhibit this crack propagation is reducing the stress concentration in which one of the used methods  is the provision of a hole at the end of a crack or known as a stop-drilled hole (SDH). In this research will be developed  a modification form of SDH model. Basically the developed model is changing the shape on the hole side so there are not forming of the curve so that the stress concentration decreases in this area. The developed hole model in this research is the binding of two holes and three holes at the crack tip. This research will be calculated the stress concentration factor for variation of given hole radius. From the research that has been done, it can be concluded that the two holes and three holes on the tip of the crack can reduce the stress concentration factor significantly. Moreover,  the value of the stress concentration factor between two holes and three holes is not significantly different, especially with the increment of the hole radius. Meanwhile, the high stress concentration factor occured in the geometrical change area of the hole for two or three holes, but the stress concentration factor is still quite low when compared to the one hole. Keywords : Stress Concentration, Crack Propagation, Stop-Drilled Hole (SDH)


Author(s):  
Tibor Kiss ◽  
Wing-Fai Ng ◽  
Larry D. Mitchell

Abstract A high-speed rotor wheel for a wind-tunnel experiment has been designed. The rotor wheel was similar to one in an axial turbine, except that slender bars replaced the blades. The main parameters of the rotor wheel were an outer diameter of 10“, a maximum rotational speed of 24,000 RPM and a maximum transferred torque of 64 lb-ft. Due to the working environment, the rotor had to be designed with high safety margins. The coupling of the rotor wheel with the shaft was found to be the most critical issue, because of the high stress concentration factors associated with the conventional coupling methods. The efforts to reduce the stress concentrations resulted in an advanced coupling design which is the main subject of the present paper. This new design was a special key coupling in which six dowel pins were used for keys. The key slots, now pin-grooves, were placed in bosses on the inner surface of the hub. The hub of the rotor wheel was relatively long, which allowed for applying the coupling near the end faces of the hub, that is, away from the highly loaded centerplane. The long hub resulted in low radial expansion in the coupling region. Therefore, solid contact between the shaft and the hub could be maintained for all working conditions. To develop and verify the design ideas, stress and deformation analyses were carried out using quasi-two-dimensional finite element models. An overall safety factor of 3.7 resulted. The rotor has been built and successfully accelerated over the design speed in a spin test pit.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000201-000207 ◽  
Author(s):  
Youngtak Lee ◽  
Doug Link

Abstract Due to rapid growth of the microelectronics industry, packaged devices with small form factors, low costs, high power performance, and increased efficiency have become of high demand in the market. To realize the current market development trend, flip chip interconnection and System-in-Package (SiP) are some of the promising packaging solutions developed. However, a surprising amount of surface mount technology (SMT) defects are associated with the use of lead-free solder paste and methods by which the paste is applied. Two such defects are solder extrusion and tombstoning. Considerable amount of defects associated with solder overflow are found on chip-on-flip-chip (COFC) SiP in hearing aids. Through the use of design of experiments (DOE), lead-free solder defect causes on hearing aids application can be better understood and subsequently reduced or eliminated. This paper will examine the failure modes of solder extrusion and tombstoning that occurred when two different types of lead-free solders, Sn-Ag-Cu (SAC) and BiAgX were used within a SiP for attachment of surface mount devices (SMD) chip components for hearing aid applications. The practical application and analysis of lead-free solder for hearing aids will include the comprehensive failure analysis of the SMD components and compare the modeling and analysis of the two different solder types through the DOE process.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000891-000905 ◽  
Author(s):  
Rainer Dohle ◽  
Stefan Härter ◽  
Andreas Wirth ◽  
Jörg Goßler ◽  
Marek Gorywoda ◽  
...  

As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this study, a comprehensive overlook of the long-term reliability and analysis of the achieved electromigration performance of flip-chip test specimen will be given, supplemented by an in-depth material science analysis. In addition, the challenges to a better understanding of electromigration and thermomigration in ultra fine-pitch flip-chip solder joints are discussed. For all experiments, specially designed flip-chips with a pitch of 100 μm and solder bump diameters of 30–60 μm have been used [1]. Solder spheres can be made of every lead-free alloy (in our case SAC305) and are placed on a UBM which has been realized for our test chips in an electroless nickel process [2]. For the electromigration tests within this study, multiple combinations of individual current densities and temperatures were adapted to the respective solder sphere diameters. Online measurements over a time period up to 10,000 hours with separate daisy chain connections of each test coupon provide exact lifetime data during the electromigration tests. As failure modes have been identified: UBM consumption at the chip side or depletion of the Nickel layer at the substrate side, interfacial void formation at the cathode contact interface, and - to a much lesser degree - Kirkendall-like void formation at the anode side. A comparison between calculated life time data using Weibull distribution and lognormal distribution will be given.


2016 ◽  
Vol 2016 (1) ◽  
pp. 000111-000116
Author(s):  
Youngtak Lee ◽  
Doug Link

Abstract Due to rapid growth of the microelectronics industry, packaged devices with small form factors, low costs, high power performance, and increased efficiency have become of high demand in the market. To realize the current market development trend, flip chip interconnection and System-in-Package (SiP) are some of the promising packaging solutions developed. However, a surprising amount of surface mount technology (SMT) defects are associated with the use of lead-free solder paste and methods by which the paste is applied. Two such defects are solder extrusion and tombstoning. Through the use of design of experiments (DOE), lead-free solder defect causes can be better understood and subsequently reduced or eliminated. This paper will examine the failure modes of solder extrusion and tombstoning that occurred when two different types of lead-free solders, Sn-Ag-Cu (SAC) and BiAgX were used within a SiP for attachment of surface mount devices (SMD) chip components. The systematic investigation will include the comprehensive failure analysis of the SMD components and compare the modeling and analysis of the two different solder types utilizing the design of experiments methods.


Author(s):  
Jeffrey C. B. Lee ◽  
Sting Wu ◽  
H. L. Chou ◽  
Yi-Shao Lai

SnAgCu solder used in laminate package like PBGA and CSP BGA to replace eutectic SnPb as interconnection has become major trend in the electronic industry. But unlike well-known failure mode of wire bonding package, flip chip package with SnAgCu inner solder bump and external solder ball as electrical interconnection present a extremely different failure mode with wire-bonding package from a point of view in material and process. In this study, one 16mm×16mm 3000 I/O SnAgCu wafer bumping using screen-printing process was explored including the effects of reflow times, high temperature storage life (HTSL) and temperature cycle test (TCT) on bump shear strength. Furthermore, the qualified wafer bumping is assembled by flip chip assembly with various underfill material and specific organic build-up substrate, then is subject to MSL4/260°C precondition and temperature cycle test to observe the underfill effect on SnAgCu bump protection and solder joint life. Various failure modes in the flip chip package like solder bump, underfill and UBM and so on, will be scrutinized with SEM. And finally, best material combination will be addressed to make the lead free flip package successful.


Author(s):  
Yu Xu ◽  
Kuao-John Young

Small size longitudinal holes are common in components of high pressure vessels. In fracture mechanics evaluation, longitudinal holes have not drawn as much attention as cross-bores. However, longitudinal holes become critical at certain locations for such assessments because of high stress concentration and short distance to vessel component wall. The high stress concentration can be attributed to three parts: global hoop stress that is magnified by the existence of the hole, local stresses due to pressure in the hole, and crack face pressure. In high pressure vessel design, axisymmetric models are used extensively in stress analyses, and their results are subsequently employed to identify critical locations for fracture mechanics evaluation. However, axisymmetric models ignore longitudinal holes and therefore cannot be used to identify the critical location inside the holes. This paper is intended to highlight the importance of including longitudinal holes in fracture mechanics evaluation, and to present a quick and effective way of evaluating high stress concentration at a longitudinal hole using the combined analytical solutions and axisymmetric stress analysis results, identifying critical locations and conducting fracture mechanics evaluation.


1978 ◽  
Vol 100 (4) ◽  
pp. 369-373
Author(s):  
T. Iwaki ◽  
K. Miyao

This paper contains an exact solution for stresses which are produced in an infinite plate with two holes of different sizes by interference fits. It is assumed that the plate and the interference-fitted ring have the same elastic properties and are perfectly bonded to each other. Numerical examples of the solution are worked out and the interference fits are found useful for reducing the high-stress concentration effects which are induced in an infinite plate with two holes by external forces.


Sign in / Sign up

Export Citation Format

Share Document