Design and Testing of a High Temperature Inverter

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000175-000179
Author(s):  
Shashank Krishnamurthy ◽  
Stephen Savulak ◽  
Yang Wang
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Power Module ◽  
Paper Test ◽  
Drive Power ◽  
Component Selection ◽  
Variable Voltage ◽  
Functional Components

Abstract The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. The paper describes the design and test of a power electronic inverter that converts a fixed input DC voltage to a variable voltage variable frequency three phase output. The component selection and design were constrained such that the inverter can operate at an ambient temperature of 170°C. The design of the key functional components such as the gate drive, power module, controller and communication will be discussed in the paper. Test results for the inverter at high temperature will also be presented.

Test Results of Sintered Nanosilver Paste Die Attach for High-Temperature Applications

2016 ◽  
Vol 13 (1) ◽  
pp. 6-16 ◽  
Author(s):  
Paul Croteau ◽  
Sayan Seal ◽  
Ryan Witherell ◽  
Michael Glover ◽  
Shashank Krishnamurthy ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Test Results ◽  
Wide Band Gap ◽  
Strain Behavior ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Sintered Silver

The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. Therefore, materials and components that are reliable at temperatures ranging from −55°C to 200°C, or higher, are needed. Sintered silver is receiving significant attention in the power electronic industry. The porous nature of sintered nanosilver paste with a reduced elastic modulus has the potential to provide strain relief between the die component and substrate while maintaining its relatively high melting point after sintering. The test results presented herein include tensile testing to rupture of sintered silver film to characterize stress-strain behavior, as well as die shear and thermal cyclic tests of sintered silver-bonded silicon die specimens to copper substrates to determine shear strength and reliability.

Test Results of Sintered Nano-Silver Paste Die Attach for High Temperature Applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000037-000049
Author(s):  
Paul Croteau ◽  
Sayan Seal ◽  
Ryan Witherell ◽  
Michael Glover ◽  
Shashank Krishnamurthy ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Test Results ◽  
Silver Paste ◽  
Nano Silver ◽  
Strain Behavior ◽  
Die Attach ◽  
Sintered Silver

The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. Therefore, materials and components that are reliable at temperatures ranging from −55 to 200 °C, or higher, are needed. Sintered silver is receiving significant attention in the power electronic industry. The porous nature of sintered nano-silver paste with a reduced elastic modulus has the potential to provide strain relief between the die component and substrate while maintaining its relatively high melting point after sintering. The test results presented herein include tensile testing to rupture of sintered silver film to characterize stress strain behavior, as well as die shear and thermal cyclic tests of sintered silver bonded silicon die specimens to copper substrates to determine shear strength and reliability.

High Temperature SiC Power Module Packaging

2009 ◽  
Author(s):  
Brian Rowden ◽  
Alan Mantooth ◽  
Simon Ang ◽  
Alex Lostetter ◽  
Jared Hornberger ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
High Reliability ◽  
Extreme Environments ◽  
Transient Liquid Phase ◽  
Wide Band ◽  
Junction Temperature ◽  
System Level ◽  
Thermal Impedance ◽  
Power Module

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.

Safety P-Cycle Protection Mechanism for Smart Power Device

2013 ◽  
Vol 804 ◽  
pp. 228-232
Author(s):  
Bin Li ◽  
Ke Qing Xiong ◽  
Yi Sun ◽  
Bing Qi
Keyword(s):  
High Efficiency ◽  
Cooling System ◽  
Power Converter ◽  
Power Device ◽  
Water Cooling ◽  
Power Module ◽  
Smart Power ◽  
Protection Mechanism ◽  
Power Modules ◽  
P Cycle

Power converter with full closed loop water cooling system, works not only use water cooling characteristics of high efficiency, but also the electricity, and reducing the volume to prevent contamination. In this paper, we proposed a novel p-cycle safety protection approach that can provide rapid cycling radiating, and can restore the status of power device. For power cabinet composition, IGBT power modules and reactors is primarary radiating components, in which IGBT power modules that used for water cooling solution is modeled as the cooled automobile engine cooling system using cycling design principle. Besides, machine side and the network side of the power module is installed in separate cabinet to improve the tightness of the entire cabinet, in order to resist sandstorms.

Power Converter and Control Interface for a GEM Fuel Cell Vehicle

2005 ◽  
Author(s):  
Joshua Anzicek ◽  
Mark Thompson
Keyword(s):  
Control System ◽  
Fuel Cell ◽  
High Efficiency ◽  
Cooling System ◽  
Power Level ◽  
Power Converter ◽  
Fuel Cell Vehicle ◽  
Power Module ◽  
Load Range ◽  
And Control

In this paper, we discuss the design and performance of a low cost, fully integrated power conversion and control system for a modified Global Electric Motors (GEM) fuel cell hybrid vehicle. The need for a custom converter and control system has become apparent as the commercial DC-DC market seems to have a void in the ranges of power and voltage required for fuel cell vehicle applications. The system incorporates a custom designed DC-DC boost converter which steps up the nominal 26 VDC fuel cell stack voltage to interface with the 72 VDC vehicle battery bus at an input power level of 1.2 kW. Additionally, several embedded control functions are implemented to integrate a Ballard Nexa™ fuel cell power module into the GEM vehicle. Design equations supported by preliminary performance data indicates that the DC-DC power converter achieves a conversion efficiency approaching 98% for a single fuel cell power module operating at full output power (1.2kW). The high efficiency allows for a simple and flexible air-cooled design with minimal heat sink requirements and cooling system weight. The control system incorporates algorithms to perform battery charging and power ramp rate, as well as fuel cell voltage, and current limiting algorithms. The control system exhibits stable performance characteristics throughout the entire vehicle load range and battery state of charge range, while tracking vehicle transient conditions.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

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