High temperature anti short circuit function for normally-on SiC JFET in an inverter leg configuration

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000087-000092
Author(s):  
Khalil El Falahi ◽  
Luong Viêt Phung ◽  
Bruno Allard ◽  
Dominique Bergogne ◽  
Fabien Dubois
Keyword(s):  
High Temperature ◽  
Temperature Effects ◽  
Short Circuit ◽  
Hybrid Vehicle ◽  
Experimental Results ◽  
Output Current ◽  
Safety Function ◽  
Specific Safety ◽  
Circuit Function ◽  
Soi Cmos

The SiC JFET is commercially available as a normally-on device. In an inverter leg configuration, many temperature effects must be compensated. Moreover, specific safety functions have to be implemented and the JFET drivers are generally the best locations to implement latter requirements. The paper describes experimental results about a SOI CMOS core driver operated up to 250°C. Particularly, an option is presented to compensate for the decrease in the driver output current with temperature. It is also demonstrated primary results of the integration of an anti short-circuit solution previously verified as a hybrid vehicle. It is shown that the reactivity of the safety function is reduced to less than 5μs at 250°C compared to 100μs in earlier vehicle at 200°C.

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

Experimental results of the Li-Pb-Pt system obtained by the high temperature drop calorimetry

2021 ◽  
pp. 115824
Author(s):  
S. Terlicka ◽  
A. Dębski ◽  
W. Gąsior ◽  
A. Fornalczyk ◽  
M. Saternus
Keyword(s):  
High Temperature ◽  
Temperature Drop ◽  
Experimental Results ◽  
Drop Calorimetry

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

scholarly journals Environmental effects on photosynthetic capacity of bean genotypes

2004 ◽  
Vol 39 (7) ◽  
pp. 615-623 ◽  
Author(s):  
Rafael Vasconcelos Ribeiro ◽  
Mauro Guida dos Santos ◽  
Gustavo Maia Souza ◽  
Eduardo Caruso Machado ◽  
Ricardo Ferraz de Oliveira ◽  
...  
Keyword(s):  
High Temperature ◽  
Natural Condition ◽  
Temperature Effects ◽  
Environmental Changes ◽  
Photosynthetic Capacity ◽  
Photosynthetic Apparatus ◽  
Co2 Assimilation ◽  
Fluorescence Yield ◽  
Environmental Condition ◽  
Response Curves

Photosynthetic responses to daily environmental changes were studied in bean (Phaseolus vulgaris L.) genotypes 'Carioca', 'Ouro Negro', and Guarumbé. Light response curves of CO2 assimilation and stomatal conductance (g s) were also evaluated under controlled (optimum) environmental condition. Under this condition, CO2 assimilation of 'Carioca' was not saturated at 2,000 µmol m-2 s-1, whereas Guarumbé and 'Ouro Negro' exhibited different levels of light saturation. All genotypes showed dynamic photoinhibition and reversible increase in the minimum chlorophyll fluorescence yield under natural condition, as well as lower photosynthetic capacity when compared with optimum environmental condition. Since differences in g s were not observed between natural and controlled conditions for Guarumbé and 'Ouro Negro', the lower photosynthetic capacity of these genotypes under natural condition seems to be caused by high temperature effects on biochemical reactions, as suggested by increased alternative electron sinks. The highest g s values of 'Carioca' were observed at controlled condition, providing evidences that reduction of photosynthetic capacity at natural condition was due to low g s in addition to the high temperature effects on the photosynthetic apparatus. 'Carioca' exhibited the highest photosynthetic rates under optimum environmental condition, and was more affected by daily changes of air temperature and leaf-to-air vapor pressure difference.

High Temperature Effects in Li-Doped ZnO Thin Films

2004 ◽  
Vol 63 (1) ◽  
pp. 209-213 ◽  
Author(s):  
A. DEYNEKA ◽  
Z. HUBICKA ◽  
M. CADA ◽  
G. SUCHANECK ◽  
M. SAVINOV ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Effects ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Effect of SiO2 Dispersion on Chlorine-Induced High-Temperature Corrosion of High-Velocity Air-Fuel Sprayed NiCrMo Coating

CORROSION ◽  
10.5006/2802 ◽  
2018 ◽  
Vol 74 (9) ◽  
pp. 984-1000 ◽  
Author(s):  
Esmaeil Sadeghi ◽  
Nicolaie Markocsan ◽  
Tanvir Hussain ◽  
Matti Huhtakangas ◽  
Shrikant Joshi
Keyword(s):  
High Temperature ◽  
Oxide Scale ◽  
Corrosion Product ◽  
Weight Change ◽  
High Velocity ◽  
Short Circuit ◽  
High Temperature Corrosion ◽  
Lower Weight ◽  
Short Circuit Diffusion ◽  
Highly Porous

NiCrMo coatings with and without dispersed SiO2 were deposited using high-velocity air-fuel technique. Thermogravimetric experiments were conducted in 5% O2 + 500 vppm HCl + N2 with and without a KCl deposit at 600°C for up to 168 h. The SiO2-containing coating showed lower weight change as a result of formation of a protective and adherent Cr-rich oxide scale. SiO2 decelerated short-circuit diffusion of Cr3+ through scale’s defects, e.g., vacancies, and promoted the selective oxidation of Cr to form the protective Cr-rich oxide scale. Furthermore, the presence of SiO2 led to less subsurface depletion of Cr in the coating, and accordingly less corrosion of the substrate. The formed corrosion product on the SiO2-free coating was highly porous, non-adherent, and thick.

Sign in / Sign up

Export Citation Format

Share Document