scholarly journals Small punch technique used to evaluate the radiation damage in SS316L thin foils due to proton bombardment

2018 ◽  
Vol 1 (S1) ◽  
pp. 36 ◽  
Author(s):  
D. Moreno ◽  
S. Haroush ◽  
A. Turgeman ◽  
I. Silverman
Keyword(s):  
Radiation Damage ◽  
Proton Bombardment ◽  
Small Punch ◽  
Thin Foils

Evaluation of the mechanical properties of SS-316L thin foils by small punch testing and finite element analysis

2015 ◽  
Vol 83 ◽  
pp. 75-84 ◽  
Author(s):  
S. Haroush ◽  
E. Priel ◽  
D. Moreno ◽  
A. Busiba ◽  
I. Silverman ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Finite Element Analysis ◽  
Finite Element ◽  
Element Analysis ◽  
Small Punch ◽  
Thin Foils

Mechanical properties of proton bombarded SS316L thin foils using the small punch technique

2020 ◽  
Vol 540 ◽  
pp. 152340
Author(s):  
Y. Snir ◽  
D. Moreno ◽  
I. Silverman ◽  
S. Samuha ◽  
Y. Eisen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Small Punch ◽  
Thin Foils

Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling

1992 ◽  
Vol 68 (1-4) ◽  
pp. 443-449 ◽  
Author(s):  
C. Ascheron ◽  
J.P. Biersack ◽  
D. Fink ◽  
P. Goppelt ◽  
A. Manuaba ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Compound Semiconductors ◽  
Proton Bombardment

Small-punch and TEM-disc testing techniques and their application to characterization of radiation damage

1992 ◽  
Vol 27 (4) ◽  
pp. 983-989 ◽  
Author(s):  
J. Kameda ◽  
X. Mao
Keyword(s):  
Radiation Damage ◽  
Small Punch ◽  
Testing Techniques

Direct observations of radiation-enhanced transformations in glass

1983 ◽  
Vol 41 ◽  
pp. 354-355
Author(s):  
J. F. DeNatale ◽  
D. G. Howitt
Keyword(s):  
Glass Matrix ◽  
Diffusion Mechanism ◽  
Bubble Formation ◽  
Silicate Glasses ◽  
Phase Decomposition ◽  
Direct Observations ◽  
Thin Foils ◽  
Oxygen Bubble ◽  
Electron Energy Loss ◽  
Kinetics Of

The electron irradiation of silicate glasses containing metal cations produces various types of phase separation and decomposition which includes oxygen bubble formation at intermediate temperatures figure I. The kinetics of bubble formation are too rapid to be accounted for by oxygen diffusion but the behavior is consistent with a cation diffusion mechanism if the amount of oxygen in the bubble is not significantly different from that in the same volume of silicate glass. The formation of oxygen bubbles is often accompanied by precipitation of crystalline phases and/or amorphous phase decomposition in the regions between the bubbles and the detection of differences in oxygen concentration between the bubble and matrix by electron energy loss spectroscopy cannot be discerned (figure 2) even when the bubble occupies the majority of the foil depth.The oxygen bubbles are stable, even in the thin foils, months after irradiation and if van der Waals behavior of the interior gas is assumed an oxygen pressure of about 4000 atmospheres must be sustained for a 100 bubble if the surface tension with the glass matrix is to balance against it at intermediate temperatures.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Direct Observation of the Diffusionless β → β + ω Transformation in Titanium Alloys

1971 ◽  
Vol 29 ◽  
pp. 122-123
Author(s):  
N. E. Paton ◽  
D. de Fontaine ◽  
J. C. Williams
Keyword(s):  
Electron Microscope ◽  
Titanium Alloys ◽  
Direct Observation ◽  
Dark Field ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Selected Area Electron Diffraction ◽  
Ti Alloys ◽  
Thin Foils ◽  
Field Device

The electron microscope has been used to study the diffusionless β → β + ω transformation occurring in certain titanium alloys at low temperatures. Evidence for such a transformation was obtained by Cometto et al by means of x-ray diffraction and resistivity measurements on a Ti-Nb alloy. The present work shows that this type of transformation can occur in several Ti alloys of suitable composition, and some of the details of the transformation are elucidated by means of direct observation in the electron microscope.Thin foils were examined in a Philips EM-300 electron microscope equipped with a uniaxial tilt, liquid nitrogen cooled, cold stage and a high resolution dark field device. Selected area electron diffraction was used to identify the phases present and the ω-phase was imaged in dark field by using a (101)ω reflection. Alloys were water quenched from 950°C, thinned, and mounted between copper grids to minimize temperature gradients in the foil.

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

Radiation Damage in Ceramics

1982 ◽  
Vol 40 ◽  
pp. 600-603
Author(s):  
T. E. Mitchell ◽  
M. R. Pascucci ◽  
R. A. Youngman
Keyword(s):  
Radiation Damage ◽  
Outer Space ◽  
Point Of View ◽  
Nuclear Waste Storage ◽  
Waste Storage ◽  
Storage Media ◽  
Transmission Electron ◽  
Fundamental Point ◽  
Small Defect ◽  
Present Understanding

1. Introduction. Studies of radiation damage in ceramics are of interest not only from a fundamental point of view but also because it is important to understand the behavior of ceramics in various practical radiation enyironments- fission and fusion reactors, nuclear waste storage media, ion-implantation devices, outer space, etc. A great deal of work has been done on the spectroscopy of point defects and small defect clusters in ceramics, but relatively little has been performed on defect agglomeration using transmission electron microscopy (TEM) in the same kind of detail that has been so successful in metals. This article will assess our present understanding of radiation damage in ceramics with illustrations using results obtained from the authors' work.

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