Different Types of Field-Effect Transistors - Theory and Applications

10.5772/65626 ◽  
2017 ◽  
2002 ◽  
Vol 742 ◽  
Author(s):  
S.-M. Koo ◽  
S. I. Khartsev ◽  
C.-M. Zetterling ◽  
A. M. Grishin ◽  
M. Östling

ABSTRACTWe report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr =14.2μC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan d ∼ 0.0007 at 12 V, 400kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∼ 9eV) barrier buffer layer between PZT (Eg ∼ 3.5eV) and SiC (Eg ∼ 3.2eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.


Biosensors ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 179
Author(s):  
Sophie Lakard ◽  
Ileana-Alexandra Pavel ◽  
Boris Lakard

Neurotransmitters are biochemical molecules that transmit a signal from a neuron across the synapse to a target cell, thus being essential to the function of the central and peripheral nervous system. Dopamine is one of the most important catecholamine neurotransmitters since it is involved in many functions of the human central nervous system, including motor control, reward, or reinforcement. It is of utmost importance to quantify the amount of dopamine since abnormal levels can cause a variety of medical and behavioral problems. For instance, Parkinson’s disease is partially caused by the death of dopamine-secreting neurons. To date, various methods have been developed to measure dopamine levels, and electrochemical biosensing seems to be the most viable due to its robustness, selectivity, sensitivity, and the possibility to achieve real-time measurements. Even if the electrochemical detection is not facile due to the presence of electroactive interfering species with similar redox potentials in real biological samples, numerous strategies have been employed to resolve this issue. The objective of this paper is to review the materials (metals and metal oxides, carbon materials, polymers) that are frequently used for the electrochemical biosensing of dopamine and point out their respective advantages and drawbacks. Different types of dopamine biosensors, including (micro)electrodes, biosensing platforms, or field-effect transistors, are also described.


2021 ◽  
Author(s):  
Soumya Sen ◽  
Ashish Raman ◽  
Mamta Khosla

TFET or Tunnel Field Effect Transistor in recent times has been the center of attraction of vast number of researcher’s despite of having minute subthreshold slope and excessive Ion/Ioff ratio. It is known that TFETs are much more immune to short-channel effects and fluctuations of random dopants in comparison to their MOSFET counterparts. TFETs are actually gated p-i-n diodes having tunneling current flowing between source and channel bands. In this paper deep rooted literature review has been done scanning each and every aspects of TFET including the variations of performance with different parameters. The paper finally gives a picture on the recent progress of TFET in different aspects such as from subthreshold swing to a significantly lower leakage current and high on current .For the simulation curves Nanohub.org was used as a tool. Lastly different types of TFET in respect of doping to symmetry and also gates are compared.


1983 ◽  
Vol 20 (3) ◽  
pp. 267-274 ◽  
Author(s):  
Pedro A. Martinez ◽  
Tomas Pollan

This paper presents a general description of the inherent transistor limitations affecting the linearity of its performance in its typical amplifying region. A unified treatment, for bipolar junction transistors and for the different types of field effect transistors, has been developed relating the Q-point location of an amplifier stage with the output amplitude and the nonlinear distortion.


2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya

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