Amplitude Range and Nonlinear Distortion in Amplifier Stages

1983 ◽  
Vol 20 (3) ◽  
pp. 267-274 ◽  
Author(s):  
Pedro A. Martinez ◽  
Tomas Pollan
Keyword(s):  
Field Effect ◽  
Nonlinear Distortion ◽  
Field Effect Transistors ◽  
Bipolar Junction Transistors ◽  
General Description ◽  
Point Location ◽  
Output Amplitude ◽  
Different Types ◽  
Amplifier Stage

This paper presents a general description of the inherent transistor limitations affecting the linearity of its performance in its typical amplifying region. A unified treatment, for bipolar junction transistors and for the different types of field effect transistors, has been developed relating the Q-point location of an amplifier stage with the output amplitude and the nonlinear distortion.

Thermal behavior characterization for MOSFETs and BJTs in hazardous locations

2021 ◽  
Vol 37 (1) ◽  
Author(s):  
D. Cárdenas ◽  
J. Delgado
Keyword(s):  
Activation Energy ◽  
Thermal Behavior ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Controlled Environment ◽  
Bipolar Junction Transistors ◽  
Non Linear ◽  
Thermal Difference ◽  
A Performance

This paper shows a numerical polynomial approach to the topic of how bipolar junction transistors (BJT) and field effect transistors (FET) can be safe or unsafe when operating in explosive atmospheres. The most used transistors have been analyzed thermographically, working in a controlled environment, to characterize their thermal behavior. The target is to prevent the transistor from creating conditions that achieve the minimum activation energy for combustible vapors, dusts, or fibers/flyings. We have brought the transistors to their nominal values, specified by working currents and voltages, and confirmed that the effect of heat dissipation in a BJT is non-linear and much greater than in a MOSFET. We have experimentally found a thermal difference of more than 200ºC of overheating of a common BJT compared to a MOSFET with similar load in fixed polarization. We found temperatures above 300ºC in BJTs operating within their nominal ranges and conditions, when the accepted “safe” temperature is not supposed to exceed 200ºC in any case. Through a performance-based analysis focused on temperature, our research suggests that equipment with BJT technologies should not be implemented in certain areas of classified locations or explosive zones; so MOSFET technologies are preferable

Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide

2002 ◽  
Vol 742 ◽  
Author(s):  
S.-M. Koo ◽  
S. I. Khartsev ◽  
C.-M. Zetterling ◽  
A. M. Grishin ◽  
M. Östling
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hysteresis Loops ◽  
Gate Stacks ◽  
Metal Insulator ◽  
Pzt Thin Films ◽  
Capacitance Voltage ◽  
Different Types

ABSTRACTWe report on the integration of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on 4H-silicon carbide and their electrical properties. The structures of metal-ferroelectric-(insulator)-semiconductor MF(I)S and metal-ferroelectric-metal-insulator-semiconductor MFMIS have been fabricated and characterized. The MFMIS structures of Au/PZT/Pt/Ti/SiO2/SiC have shown fully saturated P-E hysteresis loops with remnant polarization Pr =14.2μC/cm2 and coercive field Ec = 58.9 kV/cm. The MFIS structures exhibited stable capacitance-voltage C-V loops with low conductance (<0.1 mS/cm2, tan d ∼ 0.0007 at 12 V, 400kHz) and memory window as wide as 10 V, when a 5 nm-thick Al2O3 was used as a high bandgap (Eg ∼ 9eV) barrier buffer layer between PZT (Eg ∼ 3.5eV) and SiC (Eg ∼ 3.2eV). Both structures on n- and p- SiC have shown electrical properties promising for the application to the gate stacks for the SiC field-effect transistors (FETs) and the design and process issues on different types of the metal-ferroelectric-silicon carbide field-effect transistors (FETs) have also been proposed.

scholarly journals Electrochemical Biosensing of Dopamine Neurotransmitter: A Review

Biosensors ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 179
Author(s):  
Sophie Lakard ◽  
Ileana-Alexandra Pavel ◽  
Boris Lakard
Keyword(s):  
Central Nervous System ◽  
Nervous System ◽  
Behavioral Problems ◽  
Field Effect ◽  
Carbon Materials ◽  
Field Effect Transistors ◽  
Redox Potentials ◽  
Human Central Nervous System ◽  
Electrochemical Biosensing ◽  
Different Types

Neurotransmitters are biochemical molecules that transmit a signal from a neuron across the synapse to a target cell, thus being essential to the function of the central and peripheral nervous system. Dopamine is one of the most important catecholamine neurotransmitters since it is involved in many functions of the human central nervous system, including motor control, reward, or reinforcement. It is of utmost importance to quantify the amount of dopamine since abnormal levels can cause a variety of medical and behavioral problems. For instance, Parkinson’s disease is partially caused by the death of dopamine-secreting neurons. To date, various methods have been developed to measure dopamine levels, and electrochemical biosensing seems to be the most viable due to its robustness, selectivity, sensitivity, and the possibility to achieve real-time measurements. Even if the electrochemical detection is not facile due to the presence of electroactive interfering species with similar redox potentials in real biological samples, numerous strategies have been employed to resolve this issue. The objective of this paper is to review the materials (metals and metal oxides, carbon materials, polymers) that are frequently used for the electrochemical biosensing of dopamine and point out their respective advantages and drawbacks. Different types of dopamine biosensors, including (micro)electrodes, biosensing platforms, or field-effect transistors, are also described.

scholarly journals Development of astable multivibrators powered by photovoltaic cells

2020 ◽  
Author(s):  
Antonio Telles
Keyword(s):  
Field Effect ◽  
Output Voltage ◽  
Field Effect Transistors ◽  
Photovoltaic Cells ◽  
Bipolar Junction Transistors ◽  
Peak Efficiency ◽  
Full Wave ◽  
Half Wave ◽  
Astable Multivibrator ◽  
Simulation Results

This article describes the simulation results of an<br>astable multivibrator aimed to be fed by a photovoltaic<br>cell, with the purpose of energy harvesting for electronic<br>systems. The circuit was simulated using metal-oxide<br>semiconductor field effect transistors (MOSFETs) and<br>bipolar junction transistors. The use of half-wave and<br>full-wave rectifiers for DC output voltage supply was<br>also analyzed. The circuit reached a peak efficiency of<br>28 % when using MOSFETs PMDXB550UNE and half wave rectifier. <br>

scholarly journals A Literature Survey on Tunnel Field Effect Transistors

2021 ◽  
Author(s):  
Soumya Sen ◽  
Ashish Raman ◽  
Mamta Khosla
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Vast Number ◽  
Different Types ◽  
Channel Effects ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

TFET or Tunnel Field Effect Transistor in recent times has been the center of attraction of vast number of researcher’s despite of having minute subthreshold slope and excessive Ion/Ioff ratio. It is known that TFETs are much more immune to short-channel effects and fluctuations of random dopants in comparison to their MOSFET counterparts. TFETs are actually gated p-i-n diodes having tunneling current flowing between source and channel bands. In this paper deep rooted literature review has been done scanning each and every aspects of TFET including the variations of performance with different parameters. The paper finally gives a picture on the recent progress of TFET in different aspects such as from subthreshold swing to a significantly lower leakage current and high on current .For the simulation curves Nanohub.org was used as a tool. Lastly different types of TFET in respect of doping to symmetry and also gates are compared.

scholarly journals Development of astable multivibrators powered by photovoltaic cells

2020 ◽  
Author(s):  
Antonio Telles
Keyword(s):  
Field Effect ◽  
Output Voltage ◽  
Field Effect Transistors ◽  
Photovoltaic Cells ◽  
Bipolar Junction Transistors ◽  
Peak Efficiency ◽  
Full Wave ◽  
Half Wave ◽  
Astable Multivibrator ◽  
Simulation Results

This article describes the simulation results of an<br>astable multivibrator aimed to be fed by a photovoltaic<br>cell, with the purpose of energy harvesting for electronic<br>systems. The circuit was simulated using metal-oxide<br>semiconductor field effect transistors (MOSFETs) and<br>bipolar junction transistors. The use of half-wave and<br>full-wave rectifiers for DC output voltage supply was<br>also analyzed. The circuit reached a peak efficiency of<br>28 % when using MOSFETs PMDXB550UNE and half wave rectifier. <br>

scholarly journals Power Dissipation in Spintronic Devices: A General Perspective

2007 ◽  
Vol 7 (1) ◽  
pp. 168-180 ◽  
Author(s):  
Supriyo Bandyopadhyay
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Bipolar Junction Transistors ◽  
Switching Speed ◽  
Spintronic Device ◽  
Spintronic Devices ◽  
Single Spin ◽  
Spin Switch

Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical movement of charges, and instead, switch states by flipping spins of stationary charges. An embodiment of this approach is the "single spin logic" idea proposed more than 10 years ago. Here, I revisit that idea and present estimates of the switching speed and power dissipation. I show that the Single Spin Switch is far superior to the Spin Field Effect Transistor (or any of its clones) in terms of power dissipation. I also introduce the notion of "matrix element engineering" which will allow one to switch devices without raising and lowering energy barriers between logic states, thereby circumventing the kTln2 limit on energy dissipation. Finally, I briefly discuss single spin implementations of classical reversible (adiabatic) logic.

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